|
|
Datasheet C5460 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | C5460 | NPN Transistor, 2SC5460 TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5460
Dynamic Focus Applications High-Voltage Switching Applications High-Voltage Amplifier Applications
2SC5460
Unit: mm
• High breakdown voltage: VCEO = 800 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Co | Toshiba | data |
2 | C5460 | APD module
MODULE
APD module
C5460 series
APD module integrated with peripheral circuits
Features Applications
l Evaluation of APD Two types of APDs with different active areas (φ1.5 mm, l Fluorescence measurement φ3.0 mm) are provided. l Bar code readers l On-board high sensitivity c | Hamamatsu Corporation | data |
C54 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | C5404 | NPN Transistor, 2SC5404 Toshiba Semiconductor data | | |
2 | C5407 | NPN Transistor, 2SC5407 Power Transistors
2SC5407
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25˚C)
Ratings 1700 Panasonic data | | |
3 | C5411 | NPN Transistor, 2SC5411 2SC5411
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5411
HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS
Unit: mm
l High Voltage
: VCBO = 1500 V
l Low Saturation Voltage : VCE (sat) = 3 V (Max.)
l High Speed
: tf = 0.15 µs Toshiba Semiconductor data | | |
4 | C5416 | NPN Transistor, 2SC5416 Ordering number : EN5696
NPN Triple Diffused Planar Silicon Transistor
2SC5416
Inverter Lighting Applications
Features
• High breakdown voltage. • High reliability (Adoption of HVP process). • Adoption of MBIT process.
Package Dimensions
unit: mm 2079B-TO220FI (LS)
[2SC5416]
10.0 3.2
4.5 Sanyo data | | |
5 | C5417 | NPN Transistor, 2SC5417 2SC4517/4517A
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
(Ta=25°C)
External Dimensions FM20(TO220F)
Symbol 2SC4517 2SC4517A Unit
Symbol Sanken electric data | | |
6 | C5418 | NPN Transistor, 2SC5418 Power Transistors
2SC5418
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
s Features
q High breakdown voltage, and high reliability through the use of a glass passivation layer
q High-speed switching q Wide area of safe operation (ASO)
s Abso Panasonic Semiconductor data | | |
7 | C5422 | NPN Transistor, 2SC5422 2SC5422
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5422
HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS
l High Voltage l Low Saturation Voltage l High Speed : VCBO = 1700 V : VCE (sat) = 3 V (Max.) : tf = 0.15 µs (Typ.) Unit: mm Toshiba Semiconductor data | |
Esta página es del resultado de búsqueda del C5460. Si pulsa el resultado de búsqueda de C5460 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |