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SBT10K45WS PDF даташит

Спецификация SBT10K45WS изготовлена ​​​​«Silicon-Based Technology» и имеет функцию, называемую «Small Signal Schottky Barrier Diodes».

Детали детали

Номер произв SBT10K45WS
Описание Small Signal Schottky Barrier Diodes
Производители Silicon-Based Technology
логотип Silicon-Based Technology логотип 

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SBT10K45WS Даташит, Описание, Даташиты
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Silicon-Based Technology Corp.
Small-Signal Schottky Barrier Diodes
SBT10K45WS Series
SBT10K45WS series are Schottky Barrier Diodes fabricated by a series of
proprietary Schottky barrier patents and technologies (SBT®) developed by
Silicon-Based Technology Corporation, which exhibit high-performance
characteristics for modern switching, conversion and protection applications with
high speed and low power consumptions. The package types as described in this
data sheet are set forth in routine production; other packages are available upon
special orders.
Features and Advantages:
Low forward voltage drop(VF)
Low reverse leakage current (IR)
Very small conduction power loss
Very small switching power loss
Very high switching speed
Very high rewliabwilityw.DataSheet4U.com
Electrical Characteristics : (@TA=25°C unless otherwise specified)
Characteristic
Reverse Breakdown Voltage
(Note 2)
Forward Voltage (Note 2)
Reverse Current (Note 2)
Total Capacitance
Symbol Min. Typ. Max. Unit Test Conditions
V(BR)R
VFM
IRM
CT
45 - - - IR=100µA
- 350 380 mV IF=10mA
- 0.07 0.5 µA VR=10V
- 6.0 - pF VR=10V, f=1.0MHZ
SBT Silicon-Based Technology Corporation
1F,No.23, R&D Rd.I, Hsinchu Science Park, Taiwan, R.O.C
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Tel  886-3-5777897
Fax  886-3-5779832
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SBT10K45WS Даташит, Описание, Даташиты
www.DataSheet4U.com
SBT
SBT10K45WS Series
Maximum Ratings : (@TA=25°C unless otherwise specified)
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current @t10µs
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IFM
IFSM
Pd
RθJA
Tj, TSTG
SBT107WS Unit
45 V
40
100
1.0
200
500
-40 to +125
V
mA
A
mW
°C/W
°C
Notes: 1. Device is mounted on FR-4 PC board with a recommended pad layout, which can be found on our
website at www.sbt.com.tw
2. Short duration test pulse is used to minimize self-heating effect.
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Package Data :
Case: Molded Plastic Material (UL Flammability Classification 94V-0)
Terminals: Solderable Plated Terminals (MIL-STD-202, Method 208)
Lead Free Plating (Matte Tin Finish)
Polarity: See device configurations below
Approx. Weight: 0.006 grams.
Package outline and dimensions (see below)
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SBT10K45WS Даташит, Описание, Даташиты
www.DataSheet4U.com
SBT
SBT10K45WS Series
SOD-323
B
C
A
E
J
Dα
H
G
DIMENSIONS (MM)
ABC D EGH J
Min. 2.30 1.60 1.20 1.05 0.25 0.20 0.10 0.05
Max. 2.70 1.80 1.40 Typical 0.35 0.40 0.15 Typical
α
Ordering Information (Note 3)
www.DataSheet4U.comPart Number
Marking Code Packaging Type
Shipping
7Tape & Real
SBT10K45WS
SBTADS
SOD-323
3K
Notes: 3. Website at http://www.sbt.com.tw
4. Bulk package in a box form is also available upon request.
5. Day code marking is YM, in which Y represents year (For example: 2005 is marked by 5);
M represents month in a year (For example: March is marked by C; November is marked by K).
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Номер в каталогеОписаниеПроизводители
SBT10K45WSSmall Signal Schottky Barrier DiodesSilicon-Based Technology
Silicon-Based Technology

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