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NE663M04 PDF даташит

Спецификация NE663M04 изготовлена ​​​​«California Eastern Labs» и имеет функцию, называемую «NPN SILICON HIGH FREQUENCY TRANSISTOR».

Детали детали

Номер произв NE663M04
Описание NPN SILICON HIGH FREQUENCY TRANSISTOR
Производители California Eastern Labs
логотип California Eastern Labs логотип 

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NE663M04 Даташит, Описание, Даташиты
www.DataSheet4U.com
NPN SILICON HIGH
FREQUENCY TRANSISTOR
NE663M04
FEATURES
HIGH GAIN BANDWIDTH: fT = 15 GHz
HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz
• LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz
• HIGH IP3: NF = 27 dBm at 2 GHz
• HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz
LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of just 0.59 mm.
Flat Lead Style for better RF performance.
DESCRIPTION
M04
NEC's NE663M04 is fabricated using NEC's UHS0 25 GHz fT
wafer process. With a typical transition frequency of 19 GHz
the NE663M04 is usable in applications from 100 MHz to 5
GHz. The NE663M04 provides excellent low voltage/low
current performance.
NEC's low profile/flat lead style "M04" package is ideal for
today's portable wireless applications. The NE663M04 is an
ideal choice for LNA and oscillator requirements in all mobile
communication systems.
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ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
ICBO
IEBO
hFE
fT
|S21E|2
MSG
P1dB
IP3
NF
Cre
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Collector Cutoff Current at VCE = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Forward Current Gain2 at VCE = 2 V, IC = 10 mA
Gain Bandwidth at VCE = 3 V, IC = 90 mA, f = 2 GHz
Insertion Power Gain at VCE = 2 V, IC = 50 mA, f = 2 GHz
Maximum Stable Gain4 at VCE = 2 V, IC = 50 mA, f = 2 GHz
Output Power at 1 dB compression point at
VCE = 2 V, IC = 70 mA5, f = 2 GHz
Third Order Intercept Point at VCE = 2 V, IC = 70 mA, f = 2 GHz
Noise Figure at VCE = 2 V, IC = 10 mA, f = 2 GHz, ZIN = ZOPT
Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz
UNITS
µA
µA
GHz
dB
dB
dBm
dBm
dB
pF
NE663M04
2SC5509
M04
MIN TYP MAX
0.6
0.6
50 70 100
13 15
8 11
15
17
27
1.2 1.7
0.5 0.75
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width 350 µs, duty cycle 2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
4. MSG = S21
S12
5. Collector current at P1dB compression.
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California Eastern Laboratories
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NE663M04 Даташит, Описание, Даташиты
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NE663M04
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
15
TYPICAL NOISE PARAMETERS (TA = 25˚C)
FREQ.
(GHz)
NFMIN
(dB)
GA
(dB)
ΓOPT
MAG
ANG
Rn/50
VCEO Collector to Emitter Voltage V
3.3
VC = 2 V, IC = 5 mA
et4U.com
VEBO Emitter to Base Voltage
V
1.5
0.90 0.81
IC Collector Current
PT Total Power Dissipation
mA
mW
100
190
1.00 0.84
1.20 0.89
1.50 0.98
TJ
TSTG
Junction Temperature
Storage Temperature
°C 150
°C -65 to +150
1.70 1.03
1.90 1.09
2.00 1.12
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2.20 1.18
2.50 1.28
3.00 1.44
3.50 1.61
OUTLINE DIMENSIONS (Units in mm)
4.00 1.79
4.50 1.98
PACKAGE OUTLINE M04
VC = 2 V, IC = 10 mA
2.05±0.1
0.90 0.94
0.40-+00.0.16
2
1.25±0.1
3
1.00 0.95
1.20 0.99
1.50 1.05
2.0 ±0.1
1.25
0.60
0.65
1
0.30-+00.0.15
(Leads 1, 3, 4)
0.65
1.30
0.65
4
1.70 1.09
1.90 1.13
2.00 1.15
2.20 1.19
2.50 1.26
3.00 1.38
3.50 1.50
4.00 1.64
0.59±0.05
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
0.11-+00.0.18
4.50 1.78
VC = 2 V, IC = 20 mA
DataSheet4U.com0.90
1.00
1.20
1.50
1.70
1.19
1.20
1.22
1.26
1.29
ORDERING INFORMATION
1.90 1.32
2.00 1.33
PART NUMBER
NE663M04-T2-A
QUANTITY
3000
PACKAGING
Tape & Reel
2.20 1.37
2.50 1.42
3.00 1.51
3.50 1.61
4.00 1.72
4.50 1.83
17.51
16.66
15.33
13.71
12.79
11.96
11.58
10.88
9.95
8.69
7.69
6.88
6.22
19.02
18.12
16.72
15.02
14.04
13.16
12.75
12.01
11.02
9.68
8.62
7.76
7.06
20.04
19.10
17.64
15.89
14.88
13.98
13.56
12.78
11.75
10.34
9.22
8.32
7.57
0.23 161.68
0.25 151.89
0.27 132.37
0.31 103.26
0.34 83.97
0.36 64.78
0.38 55.22
0.40 36.16
0.43 7.75
0.49 -39.14
0.54 -85.46
0.58 -131.19
0.63 -176.35
0.16 221.12
0.18 193.71
0.21 142.02
0.25 72.33
0.28 31.09
0.30 -5.96
0.31 -22.92
0.34 -53.71
0.38 -92.04
0.43 -135.03
0.49 -151.89
0.53 -142.61
0.57 -107.21
0.28 -174.55
0.29 -172.87
0.30 -169.46
0.32 -164.18
0.34 -160.56
0.35 -156.86
0.36 -154.97
0.38 -151.14
0.40 -145.23
0.44 -134.97
0.48 -124.18
0.52 -112.87
0.56 -101.03
0.10
0.10
0.09
0.08
0.08
0.07
0.07
0.07
0.07
0.08
0.12
0.21
0.38
0.09
0.09
0.08
0.08
0.07
0.07
0.07
0.07
0.08
0.10
0.13
0.20
0.32
0.08
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.10
0.13
0.18
0.25
0.35
DataShee
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NE663M04 Даташит, Описание, Даташиты
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TYPICAL PERFORMANCE CURVES (TA = 25°C)
DC POWER DERATING CURVES
400
When case temperature
350
is specified
330
300
Mounted on
250 ceramic substrate
(15 × 15 mm, t = 0.6 mm)
200
190
150
Free Air
100
50
0 25 50 75 100 125 150
Ambient Temperature, TA (°C)
NE663M04
50.000
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VCE = 2V
40.000
30.000
20.000
10.000
0.000
200.0 400.0 600.0 800.0 1.000
Base to Emitter Voltage, VBE (V)
1.200
et4U.com
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
1050 µA
80 900 µA
750 µA
60 600 µA
450 µA
40
300 µA
20 150 µA
5 µA
0 1.0 2.0 3.0 3.5
Collector to Emitter Voltage, VCE (V)
DC FORWARD CURRENT vs.
COLLECTOR CURRENT
200 VCE = 2.0 V
150
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100
50
0
0.01
0.1
1
10 100
Collector Current, IC (mA)
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FEEDBACK CAPACITANCE vs.
COLLECTOR TO EMITTER VOLTAGE
1.00
freq. = 1 MHz
0.80
0.60
0.40
0.20
0.00
0.0 1.0 2.0 3.0 4.0 5.0
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Collector to Emitter Voltage, VCE (V)
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GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
30
VCE = 3.0 V
25
20
15
10
5
0
1
10 100 1000
Collector Current, IC (mA)
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Номер в каталогеОписаниеПроизводители
NE663M04NPN SILICON HIGH FREQUENCY TRANSISTORCalifornia Eastern Labs
California Eastern Labs

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