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NE664M04 PDF даташит

Спецификация NE664M04 изготовлена ​​​​«California Eastern Labs» и имеет функцию, называемую «NPN SILICON RF TRANSISTOR».

Детали детали

Номер произв NE664M04
Описание NPN SILICON RF TRANSISTOR
Производители California Eastern Labs
логотип California Eastern Labs логотип 

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NE664M04 Даташит, Описание, Даташиты
DATA SHEET
NPN SILICON RF TRANSISTOR
NE664M04
/
2SC5754
JEITA
Part No.
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W)
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES
• Ideal for 460 MHz to 2.4 GHz medium output power amplification
• PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm
• High collector efficiency: ηC = 60%
• UHS0-HV technology (fT = 25 GHz) adopted
• High reliability through use of gold electrodes
• Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number
NE664M04-A
2SC5754-A
NE664M04-T2-A
2SC5754-T2-A
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Document No. PU10008EJ02V0DS (2nd edition)
Date Published March 2003 CP(K)
The mark shows major revised points.









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NE664M04 Даташит, Описание, Даташиты
NE664M04 / 2SC5754
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Ptot Note
Tj
Tstg
Ratings
13
5.0
1.5
500
735
150
65 to +150
Unit
V
V
V
mA
mW
°C
°C
Note Mounted on 38 × 38 mm, t = 0.4 mm polyimide PCB
THERMAL RESISTANCE
Parameter
Junction to Ambient Resistance
Symbol
Rth j-a1
Rth j-a2
Test Conditions
Mounted on 38 × 38 mm, t = 0.4 mm
polyimide PCB
Stand alone device in free air
Ratings
170
570
Unit
°C/W
°C/W
2 Data Sheet PU10008EJ02V0DS









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NE664M04 Даташит, Описание, Даташиты
NE664M04 / 2SC5754
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
DC Characteristics
Collector Cut-off Current
ICBO VCB = 5 V, IE = 0 mA
Emitter Cut-off Current
DC Current Gain
IEBO
hFE Note 1
VBE = 1 V, IC = 0 mA
VCE = 3 V, IC = 100 mA
RF Characteristics
Gain Bandwidth Product
fT VCE = 3 V, IC = 100 mA, f = 0.5 GHz
Insertion Power Gain
S21e2 VCE = 3 V, IC = 100 mA, f = 2 GHz
Reverse Transfer Capacitance
Cre Note 2 VCB = 3 V, IE = 0 mA, f = 1 MHz
Maximum Available Power Gain
MAG Note3 VCE = 3 V, IC = 100 mA, f = 2 GHz
Linear Gain
GL VCE = 3.6 V, ICq = 20 mA, f = 1.8 GHz,
Pin = 0 dBm, 1/2 Duty
Gain 1 dB Compression Output Power PO (1 dB) VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz,
Pin = 15 dBm, 1/2 Duty
Collector Efficiency
ηC VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz,
Pin = 15 dBm, 1/2 Duty
MIN.
40
16
5.0
Notes 1. Pulse measurement: PW 350 μs, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
3. MAG =
S21
S12
(K – (K2 – 1) )
TYP.
60
20
6.5
1.0
12.0
12.0
26.0
60
MAX.
1 000
1 000
100
1.5
Unit
nA
nA
GHz
dB
pF
dB
dB
dBm
%
hFE CLASSIFICATION
Rank
Marking
hFE Value
FB
R57
40 to 100
Data Sheet PU10008EJ02V0DS
3










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Номер в каталогеОписаниеПроизводители
NE664M04NPN SILICON RF TRANSISTORCalifornia Eastern Labs
California Eastern Labs
NE664M04-ANPN SILICON RF TRANSISTORCEL
CEL
NE664M04-T2-ANPN SILICON RF TRANSISTORCEL
CEL

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