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PDF NE66719 Data sheet ( Hoja de datos )
| Número de pieza | NE66719 | |
| Descripción | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | California Eastern Labs | |
| Logotipo |  |
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NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
NE66719
FEATURES
• HIGH GAIN BANDWIDTH: fT = 21 GHz
• LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz
• HIGH MAXIMUM GAIN: 20 dB at f = 2 GHz
DESCRIPTION
NEC's NE66719 is fabricated using NEC's UHS0 25 GHz fT
wafer process. This device is ideal for oscillator or low noise
amplifier applications at 2 GHz and above.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 19
1.6±0.1
0.8±0.1
2
3
1
PIN CONNECTIONS
1. Emitter
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Base
Collector
ELECTRICAL CHARACTERISTICS (TA = 25°C)
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SYMBOLS
ICBO
IEBO
hFE
fT
MAG
MSG
|S21e|2
|S21e|2
NF
IP3
Cre
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
UNITS
Collector Cutoff Current at VCB = 5V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Forward Current Gain2 at VCE = 2 V, IC = 5 mA
Gain Bandwidth at VCE = 2 V, IC = 20 mA, f = 2 GHz
Maximum Available Power Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz
Maximum Stable Gain5 at VCE = 2 V, IC = 20 mA, f = 2 GHz
Insertion Power Gain at VCE = 1 V, IC = 10 mA, f = 2 GHz
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZOPT
Third Order Intercept Point at VCE = 2 V, IC = 20 mA, f = 2 GHz
Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz
nA
nA
GHz
dB
dB
dB
dB
dB
pF
MIN
50
18
9.0
9.5
NE66719
2SC55667
19
TYP
70
21
12.5
13.5
11.0
11.5
1.1
22
0.24
MAX
100
100
100
1.5
0.30
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
( )4. MAG = S21
S12
K- (K2 -1)
5. MSG =
S21
S12
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California Eastern Laboratories
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TYPICAL PERFORMANCE CURVES (TA = 25°C)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10 25
VCE = 2 V
f = 1 GHz
8 20
Ga
6 15
4 10
25
NF
00
1 10 100
Collector Current, IC (mA)
et4U.com
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10 25
VCE = 2 V
f = 2 GHz
8 20
6 15
Ga DataSheet4U.com
4 10
25
NF
00
1 10 100
Collector Current, IC (mA)
Remark The graphs indicate nominal characteristics.
NE66719
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10 25
VCE = 2 V
f = 1.5 GHz
8 20
Ga
6 15
4 10
25
NF
00
1 10 100
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10 25
VCE = 2 V
f = 2.5 GHz
8 20
6 15
Ga
4 10
25
NF
00
1 10 100
Collector Current, IC (mA)
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NE66719.PDF ] | |
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