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C5476 PDF даташит

Спецификация C5476 изготовлена ​​​​«Sanyo Electric» и имеет функцию, называемую «NPN Transistor - 2SC5476».

Детали детали

Номер произв C5476
Описание NPN Transistor - 2SC5476
Производители Sanyo Electric
логотип Sanyo Electric логотип 

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C5476 Даташит, Описание, Даташиты
Ordering number:EN6069
NPN Epitaxial Planar Silicon Darlington Transistor
2SC5476
85V/3A Driver Applications
Applications
· Suitable for use in switching of L load (motor
drivers, printer hammer drivers, relay drivers).
Features
· High DC current gain.
· Large current capacity and wide ASO.
· Contains a Zener diode of 95±10V between collector
and base.
· Uniformity in collector-to-base voltage due to
adoption of accurate impurity diffusion process.
· High inductive load handling capability.
Specifications
Package Dimensions
unit:mm
2041A
[2SC5476]
10.0
3.2
4.5
2.8
1.6
1.2
0.75
123
2.55 2.55
2.55 2.55
2.4
0.7
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Junction Temperature
Storage Temperature
* : With a Zener diode of (95±10V).
Tj
Tstg
Tc=25˚C
Conditions
Ratings
85*
85*
6
3
5
0.5
2
20
150
–55 to +150
Unit
V
V
V
A
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
VCB=70V, IE=0
VEB=5V, IC=0
VCE=3V, IC=1.5A
VCE=5V, IC=1.5A
IC=1.5A, IB=3mA
IC=1.5A, IB=3mA
Ratings
min typ max
Unit
10 µA
3 mA
2000 6000
50 MHz
0.9 1.5 V
2.0 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40199TS (KOTO) TA-1387 No.6069–1/4









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C5476 Даташит, Описание, Даташиты
Continued from preceding page.
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Inductive Load Voltage
Es/b Test Circuit
SW
2SC5476
Symbol
Conditions
V(BR)CBO
V(BR)CEO
Es/b
IC=0.1mA, IE=0
IC=1mA, RBE=
L=100mH, RBE=100
TUT L +VCC
IB RBE
6k200
VCC=20V
RBE=100
Tc=25°C
Ratings
min typ
85 95
85 95
15
max
105
105
Unit
V
V
mJ
3.0
4mA
6mA
2.5 8mA
2.0
1.5
IC - VCE
2mA 800µA
1mA
600µA
400µA
200µA
1.0
0.5
0
0
2
10000
7
5
3
2
100µA
IB= 0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Collector-to-Emitter Voltage, VCE – V
hFE - IC
VCE = 5V
Ta=120°C
25°C
1000 –40°C
7
5
3
2
100
5 7 0.1
23
5 7 1.0
23
Collector Current, IC – A
57
IC - VBE
4.0
VCE = 5V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Base-to-Emitter Voltage, VBE – V
VCE(sat) - IC
5 IC / IB=500
3
2
1.0 Ta=–40°C
25°C
7
120°C
5
3
5 7 0.1
23
5 7 1.0
23
Collector Current, IC – A
57
No.6069–2/4









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C5476 Даташит, Описание, Даташиты
2SC5476
VBE(sat) - I C
7 IC / IB=500
5
3
2 Ta=–40°C
25°C
1.0 120°C
7
5
5 7 0.1
10
7
5
ICP
IC
3
2
23
5 7 1.0
Collector Current, IC – A
Forward Bias A S O
2
3
5
PC =20W
50µs
100µs
200µs
1.0
7
5
3
2
0.1
7
5
3
Tc=25°C
Single pulse
2
23
5 7 10
23
5 7 100
Collecter-to-Emitter Voltage, VCE – V
PC - Tc
24
2
10
7
ICP
5
3
2
IC - L
ES/B =15mJ
RBE=100
Tc=25°C
1.0
7
5
3
2
5 7 1.0
2.4
23
5 7 10
23
L – mH
PC - Ta
5 7 100
2
2.0
1.6
1.2 No heat sink
0.8
0.4
00 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – °C
20
16
12
8
4
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc – °C
No.6069–3/4










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