DataSheet.es    


PDF H11G3 Data sheet ( Hoja de datos )

Número de pieza H11G3
Descripción 6-Pin DIP Optoisolators Darlington Output(On-Chip Resistors)
Fabricantes Motorola Inc 
Logotipo Motorola  Inc Logotipo



Hay una vista previa y un enlace de descarga de H11G3 (archivo pdf) en la parte inferior de esta página.


Total 6 Páginas

No Preview Available ! H11G3 Hoja de datos, Descripción, Manual

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by H11G1/D
GlobalOptoisolator
6-Pin DIP Optoisolators
Darlington Output (On-Chip Resistors)
The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs
optically coupled to silicon photodarlington detectors which have integral
base–emitter resistors. The on–chip resistors improve higher temperature
leakage characteristics. Designed with high isolation, high CTR, high voltage
and low leakage, they provide excellent performance.
High CTR, H11G1 & H11G2 — 1000% (@ IF = 10 mA), 500% (@ IF = 1 mA)
High V(BR)CEO, H11G1 — 100 Volts, H11G2 — 80 Volts
To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications
Interfacing and coupling systems of different potentials and impedances
Phase and Feedback Controls
General Purpose Switching Circuits
Solid State Relays
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
INPUT LED
Reverse Voltage
Forward Current — Continuous
Forward Current — Peak
Pulse Width = 300 µs, 2% Duty Cycle
VR
IF
IF
LED Power Dissipation @ TA = 25°C
Derate above 25°C
PD
Value
6
60
3
120
1.41
Unit
Volts
mA
Amps
mW
mW/°C
OUTPUT DETECTOR
Collector–Emitter Voltage
H11G1
H11G2
H11G3
Emitter–Base Voltage
Collector Current — Continuous
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VEBO
IC
PD
100 Volts
80
55
7 Volts
150 mA
150 mW
1.76 mW/°C
TOTAL DEVICE
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
Operating Junction Temperature Range(2)
Storage Temperature Range(2)
Soldering Temperature (10 s)
Isolation Surge Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
PD
TA
Tstg
TL
VISO
250
2.94
– 55 to +100
– 55 to +150
260
7500
mW
mW/°C
°C
°C
°C
Vac(pk)
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
H11G1*
[CTR = 1000% Min]
H11G2*
[CTR = 1000% Min]
H11G3
[CTR = 200% Min]
*Motorola Preferred Devices
STYLE 1 PLASTIC
61
STANDARD THRU HOLE
CASE 730A–04
SCHEMATIC
1
6
25
34
PIN 1. ANODE
2. CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
REV 1
©MMoottoorroolal,aInOc.p1t9o9e5lectronics Device Data
1

1 page




H11G3 pdf
PACKAGE DIMENSIONS
H11G1 H11G2 H11G3
–A–
64
–B–
13
F 4 PL
N
C
L
–T–
SEATING
PLANE
E 6 PL
K
G
M
D 6 PL
0.13 (0.005) M
TAM
BM
STYLE 1:
PIN 1. ANODE
2. CATHODE
3. NC
4. EMITTER
5. COLLECTOR
6. BASE
J 6 PL
0.13 (0.005) M T B M A M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A 0.320 0.350 8.13 8.89
B 0.240 0.260 6.10 6.60
C 0.115 0.200 2.93 5.08
D 0.016 0.020 0.41 0.50
E 0.040 0.070 1.02 1.77
F 0.010 0.014 0.25 0.36
G 0.100 BSC
2.54 BSC
J 0.008 0.012 0.21 0.30
K 0.100 0.150 2.54 3.81
L 0.300 BSC
7.62 BSC
M 0_ 15_ 0_ 15_
N 0.015 0.100 0.38 2.54
CASE 730A–04
ISSUE G
–A–
64
–B– S
13
F 4 PL
E 6 PL
L
H
C
–T–
G J SEATING
K 6 PL
PLANE
D 6 PL
0.13 (0.005) M T B M A M
0.13 (0.005) M T A M B M
CASE 730C–04
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.320 0.350
B 0.240 0.260
C 0.115 0.200
D 0.016 0.020
E 0.040 0.070
F 0.010 0.014
G 0.100 BSC
H 0.020 0.025
J 0.008 0.012
K 0.006 0.035
L 0.320 BSC
S 0.332 0.390
MILLIMETERS
MIN MAX
8.13 8.89
6.10 6.60
2.93 5.08
0.41 0.50
1.02 1.77
0.25 0.36
2.54 BSC
0.51 0.63
0.20 0.30
0.16 0.88
8.13 BSC
8.43 9.90
*Consult factory for leadform
option availability
Motorola Optoelectronics Device Data
5

5 Page










PáginasTotal 6 Páginas
PDF Descargar[ Datasheet H11G3.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
H11G16-Pin DIP Optoisolators Darlington Output(On-Chip Resistors)Motorola  Inc
Motorola Inc
H11G1HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPERSQT Optoelectronics
QT Optoelectronics
H11G1HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERSFairchild Semiconductor
Fairchild Semiconductor
H11G1(H11Gxx) HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATORISOCOM COMPONENTS
ISOCOM COMPONENTS

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar