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NJD2873T4 PDF даташит

Спецификация NJD2873T4 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «NPN Silicon DPAK For Surface Mount Applications».

Детали детали

Номер произв NJD2873T4
Описание NPN Silicon DPAK For Surface Mount Applications
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NJD2873T4 Даташит, Описание, Даташиты
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NJD2873T4
Plastic Power Transistors
NPN Silicon DPAK For Surface Mount
Applications
Designed for high−gain audio amplifier applications.
Features
Pb−Free Package is Available
High DC Current Gain −
hFE = 120 (Min) @ IC = 500 mA
= 40 (Min) @ IC = 2 A
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 0.3 Vdc (Max) @ IC = 1 A
High Current−Gain − Bandwidth Product −
fT = 65 MHz (Min) @ IC = 100 mA
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Continuous
Peak
VCB
VCEO
VEB
IC
Dat5a0Sheet4VUdc.com
50 Vdc
5 Vdc
2 Adc
3
Base Current
Total Device Dissipation @ TC = 25°C
Derate above 25°C
IB 0.4 Adc
PD 12.5 W
0.1 W/°C
Total Device Dissipation @ TA = 25°C*
Derate above 25°C
PD 1.4 W
0.011
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−65 to
+150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance Junction−to−Case RqJC
Junction−to−Ambient* RqJA
10 °C/W
89.3
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
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SILICON
POWER TRANSISTORS
2 AMPERES
50 VOLTS
12.5 WATTS
4
DPAK
12
3
CASE 369C
STYLE 1
MARKING
DIAGRAM
YWW
J
2873
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
NJD2873T4
DPAK
2500 Units / Reel
NJD2873T4G
DPAK
(Pb−Free)
2500 Units / Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DataShee
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© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 3
DataSheet4 U .com
1 Publication Order Number:
NJD2873T4/D
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NJD2873T4 Даташит, Описание, Даташиты
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NJD2873T4
et4U.com
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
OFF CHARACTERISTICS
Characteristic
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 0.5 A, VCE = 2 V)
(IC = 2 Adc, VCE = 2 Vdc)
Collector−Emitter Saturation Voltage (Note 1)
(IC = 1 A, IB = 0.05 A)
Base−Emitter Saturation Voltage (Note 1) (IC = 1 A, IB = 0.05 Adc)
Base−Emitter On Voltage (Note 1) (IC = 1 Adc, VCE = 2 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
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1. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%.
2. fT = hfe• ftest.
Symbol Min Max Unit
VCEO(sus)
50
Vdc
ICBO
IEBO
nAdc
− 100
− 100 nAdc
hFE
VCE(sat)
VBE(sat)
VBE(on)
120 360
40 −
− 0.3
− 1.2
− 1.2
Vdc
Vdc
Vdc
fT
65 −
MHz
Cob
− 80
pF
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NJD2873T4 Даташит, Описание, Даташиты
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NJD2873T4
TYPICAL CHARACTERISTICS
et4U.com
TA TC
2.5 25
2 20
1.5 15
1 10
0.5 5
TA (SURFACE MOUNT)
TC
00
25
50 75 100 125
T, TEMPERATURE (°C)
Figure 1. Power Derating
150
1000
0.36
100°C
VCE = 2.0 V
0.33
0.30
0.27
100
25°C
− 40°C
0.24
0.21
0.18
DataSheet4U0.c15om
10 0.12
0.09
0.06
0.03
0
0.01
0.1
1
0
10 0.01
IC, COLLECTOR CURRENT (AMPS)
100°C
25°C
− 40°C
Ic/Ib = 20
0.1 1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 2. DC Current Gain
Figure 3. Collector−Emitter Saturation Voltage
DataShee
1.1
1.0
0.9
− 40°C
0.8
25°C
0.7
0.6 100°C
0.5
0.4
0.3 Ic/Ib = 20
0.2
0.01
0.1 1
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Base−Emitter Saturation Voltage
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10
1.1
1.0
0.9
0.8 −40°C
0.7 25°C
0.6
100°C
0.5
0.4
0.3 Ic/Ib = 20
0.2
0.01
0.1 1
IC, COLLECTOR CURRENT (AMPS)
Figure 5. Base−Emitter Saturation Voltage
10
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