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NST3946DXV6T5 PDF даташит

Спецификация NST3946DXV6T5 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «(NST3946DXV6T1 / NST3946DXV6T5) Dual General Purpose Transistor».

Детали детали

Номер произв NST3946DXV6T5
Описание (NST3946DXV6T1 / NST3946DXV6T5) Dual General Purpose Transistor
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NST3946DXV6T5 Даташит, Описание, Даташиты
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NST3946DXV6T1,
NST3946DXV6T5
Dual General Purpose
Transistor
The NST3946DXV6T1 device is a spin- off of our popular
SOT-23/SOT-323 three-leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT- 563
six-leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low-power surface mount
applications where board space is at a premium.
hFE, 100-300
Low VCE(sat), 0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Lead-Free Solder Plating
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(3) (2) (1)
Q1 Q2
(4) (5)
(6)
NST3946DXV6T1*
*Q1 PNP
Q2 NPN
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
(NPN)
(PNP)
Collector - Base Voltage
(NPN)
(PNP)
Symbol
VCEO
VCBO
Value
Unit
Vdc
40
D-4a0taSheet4U.com
Vdc
60
-40
Emitter - Base Voltage
(NPN)
(PNP)
VEBO
6.0
-5.0
Vdc
Collector Current - Continuous
(NPN)
(PNP)
IC mAdc
200
-200
Electrostatic Discharge
ESD
HBM>16000,
MM>2000
V
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
Derate above 25°C
TA = 25°C
PD
357
(Note 1)
2.9
(Note 1)
mW
mW/°C
Thermal Resistance
Junction-to-Ambient
RqJA
350
(Note 1)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
Derate above 25°C
TA = 25°C
PD
500
(Note 1)
4.0
(Note 1)
mW
mW/°C
1. FR-4 @ Minimum Pad
DataSheet4U.com
654
12 3
SOT-563
CASE 463A
PLASTIC
MARKING DIAGRAM
46 D
46 = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
Package
Shipping
NST3946DXV6T1 SOT-563
4 mm pitch
4000/Tape & Reel
NST3946DXV6T5 SOT-563
2 mm pitch
8000/Tape & Reel
© Semiconductor Components Industries, LLC, 2003
March, 2003 - Rev. 0
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1 Publication Order Number:
NST3946DXV6T1/D
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NST3946DXV6T5 Даташит, Описание, Даташиты
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NST3946DXV6T1, NST3946DXV6T5
Characteristic
(Both Junctions Heated)
Thermal Resistance Junction-to-Ambient
Junction and Storage Temperature Range
Symbol Max Unit
RqJA
TJ, Tstg
250
(Note 1)
- 55 to
+150
°C/W
°C
et4U.com
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0)
(IC = -1.0 mAdc, IB = 0)
Collector - Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
(IC = -10 mAdc, IE = 0)
Emitter - Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
(IE = -10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = -30 Vdc, VEB = -3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = -30 Vdc, VEB = -3.0 Vdc)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Dat(aNSPNh)eet4U.com
(IC = -0.1 mAdc, VCE = -1.0 Vdc)
(IC = -1.0 mAdc, VCE = -1.0 Vdc)
(IC = -10 mAdc, VCE = -1.0 Vdc)
(IC = -50 mAdc, VCE = -1.0 Vdc)
(IC = -100 mAdc, VCE = -1.0 Vdc)
Collector - Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
(PNP)
(NPN)
(IC = -10 mAdc, IB = -1.0 mAdc)
(IC = -50 mAdc, IB = -5.0 mAdc)
Base - Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
(PNP)
(NPN)
(IC = -10 mAdc, IB = -1.0 mAdc)
(IC = -50 mAdc, IB = -5.0 mAdc)
2. Pulse Test: Pulse Width 300 µs; Duty Cycle 2.0%.
(PNP)
Symbol Min Max Unit
V(BR)CEO
Vdc
40 -
-40 -
V(BR)CBO
Vdc
60 -
-40 -
V(BR)EBO
Vdc
6.0 -
-5.0 -
IBL nAdc
- 50
- -50
ICEX
nAdc
- 50
- -50
hFE
VCE(sat)
VBE(sat)
40
70
100
60
30
60
80
100
60
30
-
-
-
-
0.65
-
-0.65
-
-
-
300
-
-
-
-
300
-
-
0.2
0.3
-0.25
-0.4
0.85
0.95
-0.85
-0.95
-
Vdc
Vdc
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NST3946DXV6T5 Даташит, Описание, Даташиты
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NST3946DXV6T1, NST3946DXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
SMALL- SIGNAL CHARACTERISTICS
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Current - Gain - Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
(IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz)
(NPN)
(PNP)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz)
(NPN)
(PNP)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
(VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz)
(NPN)
(PNP)
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz)
(NPN)
(PNP)
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz)
(NPN)
(PNP)
Small - Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz)
(NPN)
(PNP)
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz)
(NPN)
(PNP)
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k , f = 1.0 kHz)
(VCE = -5.0 Vdc, IC = -100 mAdc, RS = 1.0 k , f = 1.0 kHz)
(NPN)
(PNP)
SWITCHING CHARACTERISTICS
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Delay Time
(VCC = 3.0 Vdc, VBE = - 0.5 Vdc)
(VCC = -3.0 Vdc, VBE = 0.5 Vdc)
(NPN)
(PNP)
Rise Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
(IC = -10 mAdc, IB1 = -1.0 mAdc)
(NPN)
(PNP)
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc)
(VCC = -3.0 Vdc, IC = -10 mAdc)
(NPN)
(PNP)
Fall Time
(IB1 = IB2 = 1.0 mAdc)
(IB1 = IB2 = -1.0 mAdc)
(NPN)
(PNP)
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
td
tr
ts
tf
MHz
300 -
250 -
pF
- 4.0
- 4.5
pF
- 8.0
- 10.0
k
1.0 10
2.0 12
X 10- 4
0.5 8.0
0.1 10
100 400
100 400
-
mmhos
1.0 40
3.0 60
dB
- 5.0
- 4.0
DataShee
- 35
- 35
ns
- 35
- 35
- 200
- 225
ns
- 50
- 75
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Номер в каталогеОписаниеПроизводители
NST3946DXV6T1(NST3946DXV6T1 / NST3946DXV6T5) Dual General Purpose TransistorON Semiconductor
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NST3946DXV6T5(NST3946DXV6T1 / NST3946DXV6T5) Dual General Purpose TransistorON Semiconductor
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