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PDF NE721S01 Data sheet ( Hoja de datos )
| Número de pieza | NE721S01 | |
| Descripción | GENERAL PURPOSE L TO X-BAND GaAs MESFET | |
| Fabricantes | NEC | |
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GENERAL PURPOSE NE721S01
L TO X-BAND GaAs MESFET
FEATURES
OUTLINE DIMENSIONS (Units in mm)
• HIGH POWER GAIN:
7 dB TYP at 12 GHz
• HIGH OUTPUT POWER:
15 dBm TYP at 12 GHz
PACKAGE OUTLINE S01
2.0 ± 0.2
• LG = 0.8 µm, WG = 330 µm
1
• LOW PHASE NOISE:
-110 dBc/Hz TYP at 100 KHz offset at f = 12 GHz
• LOW COST PLASTIC PACKAGE
2
J
4
DESCRIPTION
1. Source
The NE721S01 is a low cost 0.8 µm recessed gate GaAs
MESFET, suitable for both amplifier and oscillator applica-
tions. Larger gate geometry make this device ideal for second
2. Drain
3. Source
4. Gate
and third stages of low noise amplifiers operating in the 1-12
GHz frequency range. The NE721S01 is fabricated with an
0.125 ± 0.05
epitaxial process resulting in excellent phase noise in oscilla-
tor applications up to 14 GHz. NEC's latest high performance/
low cost plastic packaging technology make the NE721S01
suitable for GPS, TVRO, DBS, PRD and other commDeractialSheet4U.com
applications.
3
0.65 TYP.
1.9 ± 0.2
1.6
0.4 MAX
4.0 ± 0.2
Part Number
Designator (Letter).
When the letter is
upright, the gate lead
is to the right.
DataShee
ORDERING INFORMATION
PART NUMBER
QTY
PACKAGE
NE721S01-T1
NE721S01
NE721S01-T1B
1K/Reel
Bulk up to 4K
4K/Reel
S01
S01
S01
LEAD
LENGTH
1.0 mm
1.0 mm
1.0 mm
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOL
PN
GS
P1dB
IDSS
VP
gm
IGSO
RTH
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Phase Noise at VDS = 3 V, ID = 30 mA, f = 12 GHz, 100 KHz offset
Power Gain at VDS = 3 V, ID = 30 mA, f = 12 GHz
Output Power at 1 dB Gain Compression Point, f = 12 GHz
VDS = 3 V, IDS = 30 mA
Saturated Drain Current at VDS = 3 V, VGS = 0
Pinch Off Voltage at VDS = 3 V, ID = 100 µA
Transconductance at VDS = 3 V, ID = 10 mA
Gate to Source Leak Current at VGS = -5 V
Thermal Resistance
UNITS
dBc/Hz
dB
dBm
mA
V
mS
µA
°C/W
NE721S01
S01
MIN TYP MAX
-110
7.0
15.0
30 60 100
-4.0 -2.0 -0.5
20 40
1.0 10
300
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California Eastern Laboratories
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NE721S01 NONLINEAR MODEL
SCHEMATIC
GATE
CGD_PKG
0.001pF
Lgx
Rgx 0.71nH
0.06 ohms
CGS_PKG
0.055pF
Ldx
Q1 0.58nH Rdx
0.06 ohms
Lsx
0.1nH
DRAIN
CDS_PKG
0.06PF
Rsx
0.06 ohms
NE721S01
SOURCE
FET NONLINEAR MODEL PARAMETERS (1)
UNITS
et4U.com
Parameters
VTO
VTOSC
ALPHA
BETA
GAMMA
GAMMADC
Q
DELTA
VBI
IS
N
RIS
RID
TAU
CDS
RDB
CBS
CGSO
CGDO
DELTA1
DELTA2
FC
VBR
Q1
-1.699
0
2.5
0.0254
0.09
0.09
1.95
1.1
0.8
1e-14
1.2
0
0
6e-12
0.18e-12
5000
1e-10
0.7e-12
0.055e-12
1.2
1
0.5
Infinity
Parameters
RG
RD
RS
RGMET
KF
AF
TNOM
XTI
EG
VTOTC
BETATCE
FFE
Q1
Parameter
Units
7 time seconds
6
capacitance
farads
4 inductance
0 DataSheet4U.comresistance
henries
ohms
1.36e-10
voltage
volts
1.74
current
amps
27
3
1.43
0
0
MODEL RANGE
Frequency: 0.1 to 18 GHz
Bias:
VDS = 2 V to 4 V, ID = 20 mA to 40 mA
Date:
7/97
1
(1) Series IV Libra TOM Model
Note:
This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
DataSheet4U.com EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
PRINTED IN USA ON RECYCLED PAPER -9/98
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