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HMPP3892 PDF даташит

Спецификация HMPP3892 изготовлена ​​​​«Hewlett-Packard» и имеет функцию, называемую «(HMPP-389x) MiniPak Surface Mount RF PIN Switch Diodes».

Детали детали

Номер произв HMPP3892
Описание (HMPP-389x) MiniPak Surface Mount RF PIN Switch Diodes
Производители Hewlett-Packard
логотип Hewlett-Packard логотип 

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HMPP3892 Даташит, Описание, Даташиты
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Agilent HMPP-389x Series
MiniPak Surface Mount
RF PIN Switch Diodes
Data Sheet
Description/Applications
These ultra-miniature products
represent the blending of Agilent
Technologies’ proven semiconduc-
tor and the latest in leadless
packaging technology.
The HMPP-389x series is optimized
for switching applications where
low resistance at low current and
low capacitance are required. The
MiniPak package offers reduced
parasitics when compared to
conventional leaded diodes, and
lower thermal resistance.
Low junction capacitance of the
PIN diode chip, combined with
ultra low package parasitics, mean
that these products may be used
at frequencies which are higher
than the upper limit for conven-
tional PIN diodes.
Note thaDt aAtgaiSlehnetest4mUa.ncuofmacturing
techniques assure that dice
packaged in pairs are taken from
adjacent sites on the wafer,
assuring the highest degree of
match.
The HMPP-389T low inductance
wide band shunt switch is well
suited for applications up to 6 GHz.
Features
• Surface mount MiniPak package
– low height, 0.7 mm (0.028") max.
– small footprint, 1.75 mm2
(0.0028 inch2)
• Better thermal conductivity for
higher power dissipation
• Single and dual versions
• Matched diodes for consistent
performance
• Low capacitance
• Low resistance at low current
• Low FIT (Failure in Time) rate*
• Six-sigma quality level
* For more information, see the Surface
Mount Schottky Reliability Data Sheet.
Pin Connections and
Package Marking
34
AA
21
Package Lead Code Identification
(Top View)
Single
Anti-parallel
Parallel
Shunt Switch
Product code Date code
Cathode Anode
Notes:
3 4 3 4 3 4 3 4 1. Package marking provides orientation and
identification.
2
#0
12
#2
12
#5
12
1 2. See “Electrical Specifications” for
Anode T Cathode
appropriate package marking.
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HMPP3892 Даташит, Описание, Даташиты
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HMPP-389x Series Absolute Maximum Ratings[1], TC = 25°C
Symbol Parameter
Units
Value
If Forward Current (1 µs pulse)
Amp 1
PIV Peak Inverse Voltage
V 100
Tj Junction Temperature
°C 150
Tstg Storage Temperature
θjc Thermal Resistance [2]
°C
°C/W
-65 to +150
150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the
device.
2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is
made to the circuit board.
ESD WARNING:
Handling Precautions Should Be
Taken To Avoid Static Discharge.
et4U.com
Electrical Specifications, TC = +25°C, each diode
Part Number
HMPP-
Package
Marking Code
Lead Code
Configuration
3890 D
3892 C
3895 B
389T T
0 Single
2 Anti-parallel
5 Parallel
T Shunt Switch
Test Conditions
Minimum Breakdown
Voltage (V)
100
Maximum Series
Resistance ()
2.5
VR = VBR
Measure IR 10 µA
IF = 5 mA
f = 100 MHz
Typical Parameters, TC = +25°C
Part Number
HMPP-
389x
Series Resistance
RS ()
3.8
Test Conditions
IF = 1 mA
f = 100 MHz
DataSheet4U.com
Carrier Lifetime
τ (ns)
200
IF = 10 mA
IR = 6 mA
Total Capacitance
CT (pF)
0.20 @ 5 V
Maximum Total
Capacitance (pF)
0.30
VR = 5V
f = 1 MHz
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HMPP3892 Даташит, Описание, Даташиты
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HMPP-389x Series Typical Performance, Tc = 25°C, each diode
0.50
0.45
10
0.40
0.35
0.30
1
0.1 1 10 100
IF FORWARD BIAS CURRENT (mA)
Figure 1. Total RF Resistance at 25°C vs.
Forward Bias Current.
0.25 1 MHz
0.20
0.15
0
1 GHz
48
12 16 20
VR REVERSE VOLTAGE (V)
Figure 2. Capacitance vs. Reverse Voltage.
120
Diode Mounted as a
115
Series Attenuator in a
50 Ohm Microstrip and
110 Tested at 123 MHz
Intercept point
105 will be higher
at higher
100 frequencies
95
90
85
1 10 30
IF FORWARD BIAS CURRENT (mA)
Figure 3. 2nd Harmonic Input Intercept Point
vs. Forward Bias Current.
et4U.com
200
160
VR = 2V
120
80
VR = 5V
40
VR = 10V
0
10 15
20 25
30
FORWARD CURRENT (mA)
Figure 4. Typical Reverse Recovery Time vs.
Reverse Voltage.
100
10
1
0.1
125°C 25°C 50°C
0.01
0 Da0.t2aSh0.4eet40.6U.c0o.8m 1.0
VF FORWARD VOLTAGE (V)
1.2
Figure 5. Forward Current vs. Forward Voltage.
DataShee
Typical Applications
RF COMMON
RF COMMON
2
1
RF 1
BIAS 1
3
4
RF 2
BIAS 2
34
34
RF 1 RF 2
21
21
Figure 6. Simple SPDT Switch Using Only Positive Bias.
BIAS
Figure 7. High Isolation SPDT Switch Using Dual Bias.
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