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HI649A PDF даташит

Спецификация HI649A изготовлена ​​​​«Hi-Sincerity Mocroelectronics» и имеет функцию, называемую «PNP EPITAXIAL PLANAR TRANSISTOR».

Детали детали

Номер произв HI649A
Описание PNP EPITAXIAL PLANAR TRANSISTOR
Производители Hi-Sincerity Mocroelectronics
логотип Hi-Sincerity Mocroelectronics логотип 

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HI649A Даташит, Описание, Даташиты
www.DataSheet4U.com
HI-SINCERITY
MICROELECTRONICS CORP.
HI649A
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HI649A is designed for low frequency power amplifier.
Spec. No. : HE9003
Issued Date : 1998.01.25
Revised Date : 2002.04.03
Page No. : 1/3
Absolute Maximum Ratings (Ta=25°C)
TO-251
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 20 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... -180 V
BVCEO Collector to Emitter Voltage................................................................................. -160 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current........................................................................................................... -1.5 A
Characteristics (Ta=25°C)
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DataShee
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
-180
-160
-5
-
-
-
60
30
-
-
Typ.
-
-
-
-
-
-
-
-
140
27
Classification Of hFE1
Max.
-
-
-
-10
-1
-1.5
200
-
-
-
Unit Test Conditions
V
V
V
uA
V
V
MHz
pF
IC=-1mA
IC=-10mA
IE=-1mA
VCB=-160V
IC=-500mA, IB=-50mA
VCE=-5V, IC=-150mA
VCE=-5V, IC=-150mA
VCE=-5V, IC=-500mA
VCE=-5V, IC=-150mA
VCB=-10V,f=1MHz,IE=0
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Rank
Range
B
60-120
C
100-200
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HI649A Даташит, Описание, Даташиты
www.DataSheet4U.com
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE9003
Issued Date : 1998.01.25
Revised Date : 2002.04.03
Page No. : 2/3
Current Gain & Collector Current
1000
125oC
100
25oC
75oC
10
hFE @ VCE=5V
10000
Saturation Voltage & Collector Current
VCE(sat) @ IC=10IB
1000
100
25oC
125oC
75oC
1
1
10
100
1000
10000
Collector Current-IC (mA)
10
1
10 100 1000
Collector Current-IC (mA)
10000
10000
et4U.com
1000
ON Voltage & Collector Current
VBE(ON) @ VCE=5V
25oC
75oC
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125oC
100
1
10 100 1000
Collector Current-IC (mA)
10000
DataShee
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HI649A
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HSMC Product Specification









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HI649A Даташит, Описание, Даташиты
www.DataSheet4U.com
HI-SINCERITY
MICROELECTRONICS CORP.
TO-251 Dimension
Spec. No. : HE9003
Issued Date : 1998.01.25
Revised Date : 2002.04.03
Page No. : 3/3
A BC
F
EK
3
2
G
I
Marking:
HI
649A
D Rank
Date Code
Control Code
Style: Pin 1.Base 2.Collector 3.Emitter
H
1
J
3-Lead TO-251 Plastic Package
HSMC Package Code: I
et4U.com
DIM
A
B
C
D
E
F
Inches
Min. Max.
0.0177 0.0217
0.0354 0.0591
0.0177 0.0236
0.0866 0.0945
0.2520 0.2677
0.2677 0.2835
MMini.llimetDeMarsataxS.heet4DU.IcMom
Inches
Min. Max.
0.45 0.55
G 0.2559
-
0.90 1.50
H
- *0.1811
0.45 0.60
I
- 0.0354
2.20 2.40
J
- 0.0315
6.40 6.80
K 0.2047 0.2165
6.80 7.20
*: Typical
Millimeters
Min. Max.
6.50
-
- *4.60
- 0.90
- 0.80
5.20 5.50
Notes: 1.Dimension and tolerance based on our Spec. dated May. 24,1995.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
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HI649A
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HSMC Product Specification










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Номер в каталогеОписаниеПроизводители
HI649APNP EPITAXIAL PLANAR TRANSISTORHi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics

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