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Datasheet H7N0308CF Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | H7N0308CF | Silicon N Channel MOS FET High Speed Power Switching
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 200 |  Hitachi Semiconductor | data |
H7N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | H7N0307AB | Silicon N Channel MOS FET H7N0307AB
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS (on) = 4.6 mΩ typ.
• Low drive current • 4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
123
G
D S
REJ03G1120-0300 (P  Renesas data | | |
| 2 | H7N0307AB | Silicon N Channel MOS FET High Speed Power Switching H7N0307AB
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1568A (Z) 2nd. Edition Aug. 2002 Features
• Low on-resistance • RDS(on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source
Outline
TO-220AB
D
G
S
1 2 3
1. Gate 2. Drain (Fra  Hitachi data | | |
| 3 | H7N0307L | Silicon N Channel MOS FET High Speed Power Switching H7N0307LD, H7N0307LS, H7N0307LM
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1516D (Z) 5th. Edition May 2002 Features
• Low on-resistance RDS(on) =4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source
Outline
LDPAK
4
4 D
4
G 1 S 2
1
2
Hitachi data | | |
| 4 | H7N0307LD | Silicon N Channel MOS FET H7N0307LD, H7N0307LS, H7N0307LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1121-0700 (Previous: ADE-208-1516E)
Rev.7.00 Apr 07, 2006
Features
• Low on-resistance RDS (on) = 4.6 mΩ typ.
• Low drive current • 4.5 V gate drive device can be driven from 5 V source
Outline
RE Renesas data | | |
| 5 | H7N0307LD | Silicon N Channel MOS FET High Speed Power Switching H7N0307LD, H7N0307LS, H7N0307LM
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1516D (Z)
5th. Edition May 2002
Features
• Low on-resistance RDS(on) =4.6 mΩ typ.
• Low drive current • 4.5 V gate drive device can be driven from 5 V source
Outline
LDPAK
D G
S
4 44
1 2 3
1 2 Hitachi data | | |
| 6 | H7N0307LM | Silicon N Channel MOS FET H7N0307LD, H7N0307LS, H7N0307LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1121-0700 (Previous: ADE-208-1516E)
Rev.7.00 Apr 07, 2006
Features
• Low on-resistance RDS (on) = 4.6 mΩ typ.
• Low drive current • 4.5 V gate drive device can be driven from 5 V source
Outline
RE Renesas data | | |
| 7 | H7N0307LM | Silicon N Channel MOS FET High Speed Power Switching H7N0307LD, H7N0307LS, H7N0307LM
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1516D (Z)
5th. Edition May 2002
Features
• Low on-resistance RDS(on) =4.6 mΩ typ.
• Low drive current • 4.5 V gate drive device can be driven from 5 V source
Outline
LDPAK
D G
S
4 44
1 2 3
1 2 Hitachi data | |
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