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NP32N055HLE PDF даташит

Спецификация NP32N055HLE изготовлена ​​​​«NEC» и имеет функцию, называемую «SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE».

Детали детали

Номер произв NP32N055HLE
Описание SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Производители NEC
логотип NEC логотип 

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NP32N055HLE Даташит, Описание, Даташиты
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP32N055HLE, NP32N055ILE
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
These products are N-channel MOS Field Effect
Transistor designed for high current switching
applications.
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on)1 = 24 mMAX. (VGS = 10 V, ID = 16 A)
RDS(on)2 = 29 mMAX. (VGS = 5.0 V, ID = 16 A)
Low Ciss : Ciss = 1300 pF TYP.
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP32N055HLE
TO-251
NP32N055ILE
TO-252
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°CD) ataSheet4U.com
Drain to Source Voltage
VDSS
55 V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
±32
±100
A
A
Total Power Dissipation (TA = 25°C)
PT
1.2 W
Total Power Dissipation (TC = 25°C)
Single Avalanche Current Note2
Single Avalanche Energy Note2
PT 66 W
IAS
28 / 21 / 8
A
EAS
7.8 / 44 / 64
mJ
Channel Temperature
Tch 175 °C
Storage Temperature
Tstg
–55 to +175
°C
Notes 1. PW 10 µs, Duty cycle 1 %
2. Starting Tch = 25°C, RG = 25 , VGS = 20 V0 V (See Figure 4.)
(TO-252)
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
2.27 °C/W
125 °C/W
DataShee
DataSheet4U.com
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
Date Published
Printed in Japan
DataSheet4 U .com
D14137EJ3V0DS00 (3rd edition)
March 2001 NS CP(K)
The mark 5 shows major revised points.
©
1999









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NP32N055HLE Даташит, Описание, Даташиты
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NP32N055HLE, NP32N055ILE
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ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 16 A
RDS(on)2 VGS = 5.0 V, ID = 16 A
RDS(on)3 VGS = 4.5 V, ID = 16 A
Gate to Source Threshold Voltage
VGS(th) VDS = VGS, ID = 250 µA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 16 A
Drain Leakage Current
IDSS VDS = 55 V, VGS = 0 V
Gate to Source Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Input Capacitance
Ciss VDS = 25 V, VGS = 0 V, f = 1 MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
ID = 16 A, VGS(on) = 10 V, VDD = 28 V,
Rise Time
tr RG = 1
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG1 ID = 32 A, VDD = 44 V, VGS = 10 V
QG2 ID = 32 A, VDD = 44 V, VGS = 5.0 V
Gate to Source Charge
QGS
Gate to Drain Charge
Body Diode Forward Voltage
QGD
VF(S-D)
DataSheet4U.com
IF = 32 A, VGS = 0 V
Reverse Recovery Time
trr IF = 32 A, VGS = 0 V, di/dt = 100 A/µs
Reverse Recovery Charge
Qrr
MIN. TYP. MAX. UNIT
19 24 m
22 29 m
24 33 m
1.5 2 2.5 V
8 16
S
10 µA
±10 µA
1300 2000 pF
180 270 pF
90 160 pF
14 31 ns
8 20 ns
40 81 ns
7.4 19 ns
27 41 nC
15 23 nC
5 nC
9 nC
1.0 V
41 ns
58 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG. RG
VGS
0
τ
τ = 1 µs
Duty Cycle 1 %
RL
VDD
VGS
VGS
Wave Form
10 %
0
VDS
90 %
VDS
VDS
Wave Form
0
td(on)
VGS(on) 90 %
90 %
10 % 10 %
tr td(off)
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
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Data Sheet D14137EJ3V0DS
DataShee
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NP32N055HLE Даташит, Описание, Даташиты
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NP32N055HLE, NP32N055ILE
TYPICAL CHARACTERISTICS (TA = 25 °C)
5
et4U.com
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - ˚C
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - ˚C
Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
70
64 mJ
100
10
R(aDSt(oVnG) SLi=m1it0edV)LiPmoitweIdeDrDD(DiCsCsip)ation
ID(pulse)
1 ms
PW
100 µs
=
10
µs
60
50
44 mJ
40
30
DataSheet4U.com
IAS = 8 A
21 A
28 A
1 20
TC = 25˚C
Single Pulse
0.1
0.1 1
10 100
10 7.8 mJ
0
25 50
75 100 125 150 175
VDS - Drain to Source Voltage - V
Starting Tch - Starting Channel Temperature - ˚C
1000
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100 Rth(ch-A) = 125 ˚C/W
10
Rth(ch-C) = 2.27 ˚C/W
1
DataSheet4U.com
0.1
0.01
10µ
100 µ 1 m
10 m 100 m
1
PW - Pulse Width - s
Single Pulse
TC = 25˚C
10 100 1000
Data Sheet D14137EJ3V0DS
DataShee
3
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Номер в каталогеОписаниеПроизводители
NP32N055HLESWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USENEC
NEC

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