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NP34N055IHE PDF даташит

Спецификация NP34N055IHE изготовлена ​​​​«NEC» и имеет функцию, называемую «SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE».

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Номер произв NP34N055IHE
Описание SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Производители NEC
логотип NEC логотип 

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NP34N055IHE Даташит, Описание, Даташиты
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP34N055HHE, NP34N055IHE
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
These products are N-Channel MOS Field Effect Tran-
sistors designed for high current switching applications.
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on) = 19 mMAX. (VGS = 10 V, ID = 17 A)
Low Ciss : Ciss = 1600 pF TYP.
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP34N055HHE
TO-251
NP34N055IHE
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
55 V
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse) Note1
VGSS
±20 V
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ID(DC)
±34 A
ID(pulse)
±136
A
Total Power Dissipation (TA = 25 °C)
PT
1.2 W
Total Power Dissipation (TC = 25 °C)
Single Avalanche Current Note2
Single Avalanche Energy Note2
PT 88 W
IAS 34 / 27 / 10 A
EAS 11 / 72 / 100 mJ
Channel Temperature
Tch 175 °C
Storage Temperature
Tstg –55 to + 175 °C
(TO-251)
(TO-252)
Notes 1. PW 10 µ s, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V 0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
1.70 °C/W
125 °C/W
DataShee
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14153EJ3V0DS00 (3rd edition)
Date Published March 2001 NS CP(K)
Printed in Japan
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The mark 5 shows major revised points.
©
1999,2000









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NP34N055HHE, NP34N055IHE
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ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain to Source On-state Resistance
RDS(on) VGS = 10 V, ID = 17 A
Gate to Source Threshold Voltage
VGS(th) VDS = VGS, ID = 250 µA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 17 A
Drain Leakage Current
IDSS VDS = 55 V, VGS = 0 V
Gate to Source Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Input Capacitance
Ciss VDS = 25 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
ID = 17 A
Rise Time
tr VGS(on) = 10 V
Turn-off Delay Time
td(off)
VDD = 28 V
Fall Time
tf RG = 1
Total Gate Charge
QG ID = 34 A
Gate to Source Charge
QGS
VDD = 44 V
Gate to Drain Charge
QGD
VGS = 10 V
Body Diode Forward Voltage
VF(S-D) IF = 34 A, VGS = 0 V
Reverse Recovery Time
trr IF = 34 A, VGS = 0 V
Reverse Recovery Charge
Qrr di/dt = 100 A/µs
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MIN. TYP. MAX.
15 19
2.0 3.0 4.0
6 12
10
±10
1600 2400
250 380
120 220
21 47
15 38
35 70
12 29
30 45
9
12
1.0
40
58
UNIT
m
V
S
µA
µA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG. RG
VGS
0
τ
τ = 1 µs
Duty Cycle 1 %
RL
VDD
VGS
VGS
Wave Form
10 %
0
VDS
90 %
VDS
VDS
Wave Form
0
td(on)
VGS(on) 90 %
90 %
10 % 10 %
tr td(off)
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
DataShee
2
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Data Sheet D14153EJ3V0DS









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NP34N055IHE Даташит, Описание, Даташиты
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NP34N055HHE, NP34N055IHE
TYPICAL CHARACTERISTICS (TA = 25°C)
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Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
100 120
100
80
80
60
60
40
40
20 20
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - ˚C
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - ˚C
5 Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
100 mJ
100
100
10
R(DaSt(oVn)GLSim= i1te0dV)
ID(pulse)
ID(DC)
LimPoitewder
1
DC
Dissipation
ms
100
PW
µs
=
10
µs
80
60
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40
72 mJ
IAS = 10 A
27 A
34 A
1
TC = 25˚C
Single Pulse
0.1
0.1 1
10
VDS - Drain to Source Voltage - V
100
20
11 mJ
0
25 50 75 100 125 150 175
Starting Tch - Starting Channel Temperature - ˚C
1000
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100 Rth(ch-A) = 125 ˚C/W
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10
Rth(ch-C) = 1.70 ˚C/W
1
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0.1
0.01
10 µ
100 µ 1 m
10 m 100 m
1
PW - Pulse Width - s
Single Pulse
TC = 25˚C
10 100 1000
Data Sheet D14153EJ3V0DS
3
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NP34N055IHESWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USENEC
NEC

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