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NTZD3154N PDF даташит

Спецификация NTZD3154N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Small Signal MOSFET 20V 540mA Dual N-Channel».

Детали детали

Номер произв NTZD3154N
Описание Small Signal MOSFET 20V 540mA Dual N-Channel
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTZD3154N Даташит, Описание, Даташиты
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NTZD3154N
Small Signal MOSFET
20 V, 540 mA, Dual NChannel
Features
Low RDS(on) Improving System Efficiency
Low Threshold Voltage
Small Footprint 1.6 x 1.6 mm
ESD Protected Gate
These are PbFree Devices
Applications
Load/Power Switches
Power Supply Converter Circuits
Battery Management
Cell Phones, Digital Cameras, PDAs, Pagers, etc.
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V(BR)DSS
20
RDS(on) Typ
400 mW @ 4.5 V
500 mW @ 2.5 V
700 mW @ 1.8 V
ID Max (Note 1)
540 mA
D1 D2
G1 G2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain Current
(Note 1)
Power Dissipation
(Note 1)
Steady TA = 25°C
State TA = 85°C
Steady State
VDSS 20 V
VGS
±6.0
V
DataS5h40eet4mUA.com
ID 390
PD 250 mW
Continuous Drain Current
(Note 1)
Power Dissipation
(Note 1)
tv5s
TA = 25°C
TA = 85°C
tv5s
ID
PD
570 mA
410
280 mW
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IDM
TTSJT,G
IS
TL
1.5
55 to
150
350
260
A
°C
mA
°C
THERMAL RESISTANCE RATINGS
Parameter
JunctiontoAmbient – Steady State
(Note 1)
JunctiontoAmbient – t v 5 s (Note 1)
Symbol Max Unit
RqJA
500 °C/W
447
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
NChannel
S1
MOSFET
S2
MARKING
DIAGRAM
6
1
SOT5636
CASE 463A
TV M G
G
TV = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
PINOUT: SOT563
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
Top View
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
DataShee
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© Semiconductor Components Industries, LLC, 2006
March, 2006 Rev. 1
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1
Publication Order Number:
NTZD3154N/D









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NTZD3154N Даташит, Описание, Даташиты
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NTZD3154N
et4U.com
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage Tem-
perature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V
VDS = 16 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = "4.5 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
DraintoSource On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
CHARGES AND CAPACITANCES
gFS
VGS = VDS, ID = 250 mA
VGS = 4.5 V, ID = 540 mA
VGS = 2.5 V, ID = 500 mA
VGS = 1.8 V, ID = 350 mA
VDS = 10 V, ID = 540 mA
Input Capacitance
CISS
Output Capacitance
COSS
VGS = 0 V, f = 1.0 MHz, VDS = 16 V
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
GatetoSource Charge
QQGG(TSH)DataShVGeSet=44U.5.cVo, mVDS = 10 V; ID = 540 mA
GatetoDrain Charge
QGD
SWITCHING CHARACTERISTICS, VGS = V (Note 4)
TurnOn Delay Time
td(ON)
Rise Time
TurnOff Delay Time
tr
td(OFF)
VGS = 4.5 V, VDD = 10 V, ID = 540 mA,
RG = 10 W
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 350 mA
TJ = 25°C
TJ = 125°C
Reverse Recovery Time
tRR VGS = 0 V, dISD/dt = 100 A/ms, IS = 350 mA
2. Surfacemounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: pulse width v 300 ms, duty cycle v2%.
4. Switching characteristics are independent of operating junction temperatures.
Min Typ
20
14
−−
−−
−−
0.45
2.0
0.4
0.5
0.7
1.0
80
13
10
1.5
0.1
0.2
0.35
6.0
4.0
16
8.0
0.7
0.6
6.5
Max
1.0
5.0
"5.0
1.0
0.55
0.7
0.9
150
25
20
2.5
1.2
Unit
V
mV/°C
mA
mA
V
mV/°C
W
S
pF
nC
ns
V
ns
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NTZD3154N Даташит, Описание, Даташиты
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NTZD3154N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
1.2
5.5 V
1.0 1.8 V
TJ = 25°C
0.8
VGS = 1.6 V
VGS = 2.0 V to 2.2 V
0.6
VGS = 1.4 V
0.4
0.2 VGS = 1.2 V
0 VGS = 1.0 V
0 1 2 3 4 5 6 7 8 9 10
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
1.8
1.6 VDS w 10 V TJ = 55°C
1.4
1.2
TJ = 100°C
1.0
0.8
0.6
0.4
0.2 TJ = 25°C
0
0.5 1.0 1.5 2.0 2.5
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
3.0
et4U.com
1.0 0.9
0.9
ID = 0.54 A
TJ = 25°C
TJ = 25°C
0.8
0.8
VGS = 1.8 V
0.7
0.7
0.6
0.6
0.5
DataSheet4U.c0.o5m
VGS = 2.5 V
DataShee
0.4 0.4 VGS = 4.5 V
0.3
1
2345
VGS, GATETOSOURCE VOLTAGE (V)
0.3
6 0.2
0.4 0.6 0.8
1
ID, DRAIN CURRENT (A)
1.2
Figure 3. OnResistance versus
GatetoSource Voltage
Figure 4. OnResistance versus Drain Current
and Gate Voltage
2 1000
1.8
ID = 0.54 A
VGS = 4.5 V
VGS = 0 V
TJ = 150°C
1.6
1.4
100
1.2
1
0.8 TJ = 100°C
0.6
50
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25 0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
150
10
2 4 6 8 10 12 14 16 18 20
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 6. DraintoSource Leakage Current
versus Voltage
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Номер в каталогеОписаниеПроизводители
NTZD3154NSmall Signal MOSFET 20V 540mA Dual N-ChannelON Semiconductor
ON Semiconductor

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