NTZD3154N PDF даташит
Спецификация NTZD3154N изготовлена «ON Semiconductor» и имеет функцию, называемую «Small Signal MOSFET 20V 540mA Dual N-Channel». |
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Детали детали
Номер произв | NTZD3154N |
Описание | Small Signal MOSFET 20V 540mA Dual N-Channel |
Производители | ON Semiconductor |
логотип |
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NTZD3154N
Small Signal MOSFET
20 V, 540 mA, Dual N−Channel
Features
• Low RDS(on) Improving System Efficiency
• Low Threshold Voltage
• Small Footprint 1.6 x 1.6 mm
• ESD Protected Gate
• These are Pb−Free Devices
Applications
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Management
• Cell Phones, Digital Cameras, PDAs, Pagers, etc.
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V(BR)DSS
20
RDS(on) Typ
400 mW @ 4.5 V
500 mW @ 2.5 V
700 mW @ 1.8 V
ID Max (Note 1)
540 mA
D1 D2
G1 G2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current
(Note 1)
Power Dissipation
(Note 1)
Steady TA = 25°C
State TA = 85°C
Steady State
VDSS 20 V
VGS
±6.0
V
DataS5h40eet4mUA.com
ID 390
PD 250 mW
Continuous Drain Current
(Note 1)
Power Dissipation
(Note 1)
tv5s
TA = 25°C
TA = 85°C
tv5s
ID
PD
570 mA
410
280 mW
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IDM
TTSJT,G
IS
TL
1.5
−55 to
150
350
260
A
°C
mA
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient – Steady State
(Note 1)
Junction−to−Ambient – t v 5 s (Note 1)
Symbol Max Unit
RqJA
500 °C/W
447
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
N−Channel
S1
MOSFET
S2
MARKING
DIAGRAM
6
1
SOT−563−6
CASE 463A
TV M G
G
TV = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PINOUT: SOT−563
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
Top View
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
DataShee
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© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 1
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1
Publication Order Number:
NTZD3154N/D
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NTZD3154N
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Tem-
perature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
−
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V
VDS = 16 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = "4.5 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
CHARGES AND CAPACITANCES
gFS
VGS = VDS, ID = 250 mA
−
VGS = 4.5 V, ID = 540 mA
VGS = 2.5 V, ID = 500 mA
VGS = 1.8 V, ID = 350 mA
VDS = 10 V, ID = 540 mA
Input Capacitance
CISS
Output Capacitance
COSS
VGS = 0 V, f = 1.0 MHz, VDS = 16 V
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
Gate−to−Source Charge
QQGG(TSH)DataShVGeSet=44U.5.cVo, mVDS = 10 V; ID = 540 mA
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS, VGS = V (Note 4)
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VGS = 4.5 V, VDD = 10 V, ID = 540 mA,
RG = 10 W
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 350 mA
TJ = 25°C
TJ = 125°C
Reverse Recovery Time
tRR VGS = 0 V, dISD/dt = 100 A/ms, IS = 350 mA
2. Surface−mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: pulse width v 300 ms, duty cycle v2%.
4. Switching characteristics are independent of operating junction temperatures.
Min Typ
20 −
− 14
−−
−−
−−
0.45 −
− 2.0
− 0.4
− 0.5
− 0.7
− 1.0
− 80
− 13
− 10
− 1.5
− 0.1
− 0.2
− 0.35
− 6.0
− 4.0
− 16
− 8.0
− 0.7
− 0.6
− 6.5
Max
−
−
1.0
5.0
"5.0
1.0
−
0.55
0.7
0.9
−
150
25
20
2.5
−
−
−
−
−
−
−
1.2
−
−
Unit
V
mV/°C
mA
mA
V
mV/°C
W
S
pF
nC
ns
V
ns
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NTZD3154N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
1.2
5.5 V
1.0 1.8 V
TJ = 25°C
0.8
VGS = 1.6 V
VGS = 2.0 V to 2.2 V
0.6
VGS = 1.4 V
0.4
0.2 VGS = 1.2 V
0 VGS = 1.0 V
0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
1.8
1.6 VDS w 10 V TJ = −55°C
1.4
1.2
TJ = 100°C
1.0
0.8
0.6
0.4
0.2 TJ = 25°C
0
0.5 1.0 1.5 2.0 2.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
3.0
et4U.com
1.0 0.9
0.9
ID = 0.54 A
TJ = 25°C
TJ = 25°C
0.8
0.8
VGS = 1.8 V
0.7
0.7
0.6
0.6
0.5
DataSheet4U.c0.o5m
VGS = 2.5 V
DataShee
0.4 0.4 VGS = 4.5 V
0.3
1
2345
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.3
6 0.2
0.4 0.6 0.8
1
ID, DRAIN CURRENT (A)
1.2
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2 1000
1.8
ID = 0.54 A
VGS = 4.5 V
VGS = 0 V
TJ = 150°C
1.6
1.4
100
1.2
1
0.8 TJ = 100°C
0.6
−50
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−25 0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
150
10
2 4 6 8 10 12 14 16 18 20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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Номер в каталоге | Описание | Производители |
NTZD3154N | Small Signal MOSFET 20V 540mA Dual N-Channel | ON Semiconductor |
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