C1674 PDF даташит
Спецификация C1674 изготовлена «Fairchild Semiconductor» и имеет функцию, называемую « KSC1674». |
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Детали детали
Номер произв | C1674 |
Описание | KSC1674 |
Производители | Fairchild Semiconductor |
логотип |
4 Pages
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KSC1674
TV PIF Amplifier, FM Tuner RF Amplifier,
Mixer, Oscillator
• High Current Gain Bandwidth Product : fT=600MHz (TYP.)
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
1 TO-92
1. Emitter 2. Base 3. Collector
Ratings
30
20
4
20
250
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VBE(on)
VCE(sat)
fT
Cob
Cc·rbb’
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Collector-Base Time Constant
IC=10µA, IE=0
IC=5mA, IB=0
IE=10µA, IC=0
VCB=30V, IE=0
VEB=4V, IC=0
VCE=6V, IC=1mA
VCE=6V, IC=1mA
IC=10mA, IB=1mA
VCE=6V, IC=1mA
VCB=6V, IE=0, f=1MHz
VCE=6V, IC=1mA
f=31.9MHz
NF Noise Figure
VCE=6V, IC=1mA
RS=50Ω, f=100MHz
Min.
30
20
4
40
400
Typ.
0.72
0.1
600
1.2
12
3.0
Max.
0.1
0.1
240
0.3
15
Units
V
V
V
µA
µA
V
V
MHz
pF
ps
5.0 dB
hFE Classification
Classification
hFE
R
40 ~ 80
O
70 ~ 140
Y
120~ 240
©2002 Fairchild Semiconductor Corporation
Rev. B2, November 2002
Free Datasheet http://www.datasheet4u.com/
No Preview Available ! |
Typical Characteristics
20
18 IB = 110µA
16 IB = 100µA
IB = 90µA
14 IB = 80µA
12 IB = 70µA
10 IB = 60µA
8 IB = 50µA
6 IB = 40µA
I
B
=
30µA
4
I
B
=
20µA
2 IB = 10µA
0
0 2 4 6 8 10 12 14 16 18 20
V [V], COLLECTOR-EMITTER VOLTAGE
CE
Figure 1. Static Characteristic
10
IC=10IB
VBE(sat)
1
VCE(sat)
0.1
0.01
0.1
1 10
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
f=1MHz
IE=0
1
0.1
1
10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
1000
100
VCE = 6V
10
1
10
IC[mA], COLLECTOR CURRENT
Figure 2. DC current Gain
VCE = 6V
10
1
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VBE[V],BASE-EMITTER VOLTAGE
1.4
Figure 4. Base-Emitter On Voltage
10000
1000
VCE=6V
100
10
1
10 100
IC[mA], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product
Rev. B2, November 2002
Free Datasheet http://www.datasheet4u.com/
No Preview Available ! |
Package Dimensions
TO-92
4.58
+0.25
–0.15
0.46 ±0.10
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
0.38
+0.10
–0.05
©2002 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. B2, November 2002
Free Datasheet http://www.datasheet4u.com/
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