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Número de pieza | HFP730 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Shantou Huashan Electronic | |
Logotipo | ||
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Shantou Huashan Electronic Devices Co.,Ltd.
HFP730
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
these power MOSFETs is designed for high voltage, high speed power
switching applications such as switching regulators, converters,
solenoid and relay drivers. And DC-DC&DC-AC Converters for
Telecom,Industrial and Consumer Environment
█ Features
• 5.5A, 400V, RDS(on) <1.0Ω@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Equivalent Type:IRF730
█ Maximum Ratings(Ta=25℃ unless otherwise specified)
TO-220
1- G 2-D 3-S
Tstg——Storage Temperature ------------------------------------------------------ -55~150℃
Tj ——Operating Junction Temperature -------------------------------------------------- 150℃
VDSS —— Drain-Source Voltage ----D--a-t-a-S--h-e--e-t-4-U--.c--o-m------------------------------------400V
VDGR —— Drain-Gate Voltage (RGS=20kΩ) -------------------------------------------------------- 400V
VGSS —— Gate-Source Voltage ------------------------------------------------------------------------ ±20V
ID —— Drain Current (Continuous) ------------------------------------------------------------------- 5.5A
PD —— Maximum Power Dissipation ------------------------------------------------------------- 73W
IAR —— Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, d < 1%) ---------------------------------------------------- 5.5 A
EAS—— Single Pulse Avalanche Energy
(starting Tj = 25℃, ID = IAR, VDD = 50 V) --------------------------------------------------- 330 mJ
EAR—— Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) ---------------- 7.3mJ
█ Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Rth c-s
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
TO-220
Max 1.71
Max 62.5
Typ 0.5
Unit
℃/W
℃/W
℃/W
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█ Typical Characteristics
HFP730
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5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet HFP730.PDF ] |
Número de pieza | Descripción | Fabricantes |
HFP730 | N-Channel Enhancement Mode Field Effect Transistor | Shantou Huashan Electronic |
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