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PDF NTR4503N Data sheet ( Hoja de datos )
| Número de pieza | NTR4503N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTR4503N
Power MOSFET
30 V, 2.5 A, Single N−Channel, SOT−23
Features
• Leading Planar Technology for Low Gate Charge / Fast Switching
• 4.5 V Rated for Low Voltage Gate Drive
• SOT−23 Surface Mount for Small Footprint (3 x 3 mm)
• Pb−Free Package is Available
Applications
• DC−DC Conversion
• Load/Power Switch for Portables
• Load/Power Switch for Computing
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t ≤ 10 s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
VDSS 30 V
VGS ±20 V
ID 2.0 A
1.5
2.5
PD 0.73 W
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ID 1.5 A
1.1
PD 0.42 W
Pulsed Drain Current
ESD Capability (Note 3)
tp = 10 ms
C = 100 pF,
RS = 1500 W
IDM 6.0 A
ESD 125 V
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TJ, −55 to °C
Tstg 150
IS 2.0 A
TL 260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA
170 °C/W
Junction−to−Ambient − t < 10 s (Note 1)
RqJA
100
Junction−to−Ambient − Steady State (Note 2)
RqJA
300
1. Surface−mounted on FR4 board using 1 in sq pad size.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0.
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V(BR)DSS
30 V
RDS(on) TYP
85 mW @ 10 V
105 mW @ 4.5 V
ID MAX
2.5 A
N−Channel
D
G
S
3
1
2
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
TR3
1
Gate
2
Source
TR3 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
NTR4503NT1
SOT−23 3000/Tape & Reel
SOT−23
NTR4503NT1G (Pb−Free) 3000/Tape & Reel
SOT−23
NTR4503NT3G (Pb−Free) 10000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DataShee
© Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 3
1
Publication Order Number:
NTR4503N/D
1 page  
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NTR4503N
PACKAGE DIMENSIONS
et4U.com
A
L
3
BS
12
VG
C
DH
K
SOT−23
(TO−236)
CASE 318−08
ISSUE AK
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
INCHES
DIM MIN
MAX
A 0.1102 0.1197
B 0.0472 0.0551
C 0.0350 0.0440
D 0.0150 0.0200
G 0.0701 0.0807
H 0.0005 0.0040
J 0.0034 0.0070
K 0.0140 0.0285
L 0.0350 0.0401
S 0.0830 0.1039
V 0.0177 0.0236
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
MILLIMETERS
MIN MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013 0.100
0.085 0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
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0.9
0.035
2.0
0.079
0.8
0.031
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DataShee
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NTR4503N.PDF ] | |
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