NTQD6866R2 PDF даташит
Спецификация NTQD6866R2 изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTQD6866R2 |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
12 Pages
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NTQD6866R2
Power MOSFET
6.9 Amps, 20 Volts
N–Channel TSSOP–8
Features
• New Low Profile TSSOP–8 Package
• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperatures
Applications
• Power Management in Portable and Battery–Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
• Battery Applications
• NoteBook PC
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6.9 AMPERES
20 VOLTS
30 mΩ @ VGS = 4.5 V
N–Channel
D
N–Channel
D
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage
VDSS
20 Vdc
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
VDGR 20 Vdc
Gate–to–Source Voltage – Continuous
Thermal Resistance – Single Die
VGS
"12 Vdc
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Junction–to–Ambient (Note 1)
Total Power Dissipation @ TA = 25_C
Continuous Drain Current @ TA = 25_C
Pulsed Drain Current (Note 4)
RqJA
PD
ID
IDM
62.5 °C/W
2.0 W
6.9 Adc
24 Adc
Thermal Resistance – Single Die
Junction–to–Ambient (Note 2)
Total Power Dissipation @ TA = 25_C
Continuous Drain Current @ TA = 25_C
Continuous Drain Current @ TA = 70_C
Pulsed Drain Current (Note 4)
RqJA
PD
ID
ID
IDM
88 °C/W
1.42 W
5.8 Adc
4.6 Adc
20 Adc
Thermal Resistance – Single Die
Junction–to–Ambient (Note 3)
Total Power Dissipation @ TA = 25_C
Continuous Drain Current @ TA = 25_C
Continuous Drain Current @ TA = 70_C
Pulsed Drain Current (Note 4)
RqJA
PD
ID
ID
IDM
132 °C/W
0.94 W
4.7 Adc
3.8 Adc
14 Adc
1. Mounted onto a 2″ square FR–4 board (1″ sq. 2 oz Cu 0.06″ thick single sided),
t < 10 seconds.
2. Mounted onto a 2″ square FR–4 board (1″ sq. 2 oz Cu 0.06″ thick single sided),
t = 10 seconds.
3. Minimum FR–4 or G–10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.
G1 G2
S1 S2
TSSOP–8
8 CASE 948S
PLASTIC
1
MARKING DIAGRAM
& PIN ASSIGNMENT
S1 1
8D
G1
2 866 7
D
S2
3 YWW 6
D
G2 4
5D
Top View
866 = Device Code
YWW = Date Code
ORDERING INFORMATION
Device
Package
Shipping
NTQD6866R2
TSSOP–8 4000/Tape & Reel
DataShee
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© Semiconductor Components Industries, LLC, 2001
September, 2001 – Rev. 1
1
Publication Order Number:
NTQD6866R2/D
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NTQD6866R2
MAXIMUM RATINGS (continued)
Rating
Thermal Resistance – Both Die
Junction–to–Ambient (Note 5)
Total Power Dissipation @ TA = 25_C
Continuous Drain Current @ TA = 25_C
Pulsed Drain Current (Note 5)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 5.0 Vdc, Peak IL = 5.5 Apk, L = 10 mH, RG = 25 Ω)
Maximum Lead Temperature for Soldering Purposes for 10 seconds
Symbol
RqJA
PD
ID
IDM
TJ, Tstg
EAS
TL
Value
Unit
160
0.78
4.3
14
–55 to +150
150
260
°C/W
W
Adc
Adc
°C
mJ
°C
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 20 Vdc, TJ = 25°C)
(VGS = 0 Vdc, VDS = 20 Vdc, TJ = 100°C)
Gate–Body Leakage Current (VGS = ±12 Vdc, VDS = 0 Vdc)
IDSS
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
VGS(th)
Static Drain–to–Source On–State Resistance
(VGS = 4.5 Vdc, ID = 6.9 Adc)
(VGS = 4.5 Vdc, ID = 5.8 Adc)
(VGS = 2.5 Vdc, ID = 3.5 Adc)
(VGS = 2.5 Vdc, ID = 2.9 Adc)
RDS(on)
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Forward Transconductance
(VDS = 10 Vdc, ID = 5.8 Adc)
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
5. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.
Ciss
Coss
Crss
Min
20
–
–
–
–
0.6
–
–
–
–
–
–
–
–
–
Typ Max Unit
Vdc
––
18.5 – mV/°C
µAdc
– 1.0
– 10
–
±100
nAdc
0.9
–2.7
0.026
0.025
0.030
0.030
14
1.2
–
0.032
0.030
0.038
0.038
–
Vdc
mV/°C
Ω
Mhos
875 1400 pF
325 550
100 175
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NTQD6866R2
ELECTRICAL CHARACTERISTICS (continued)
Characteristic
Symbol
Min
Typ
Max Unit
SWITCHING CHARACTERISTICS (Notes 6 & 7)
Turn–On Delay Time
td(on)
–
10 18 ns
Rise Time
Turn–Off Delay Time
(VDD = 16 Vdc, ID = 5.8 Adc,
VGS = 4.5 Vdc, RG = 6.0 Ω)
tr
td(off)
–
–
45 80
40 75
Fall Time
tf – 90 150
Turn–On Delay Time
td(on)
–
8.0
–
ns
Rise Time
Turn–Off Delay Time
(VDD = 16 Vdc, ID = 5.8 Adc,
VGS = 4.5 Vdc, RG = 3.0 Ω)
tr – 45 –
td(off)
–
35
–
Fall Time
tf – 75 –
Gate Charge
(VDS = 16 Vdc, VGS = 4.5 Vdc,
ID = 5.8 Adc)
Qtot –
13 22 nC
Qgs – 1.8 –
Qgd – 4.5 –
BODY–DRAIN DIODE RATINGS (Note 6)
Forward On–Voltage
(IS = 5.8 Adc, VGS = 0 Vdc)
VSD – 0.85 1.0 Vdc
(IS = 5.8 Adc, VGS = 0 Vdc, TJ = 100°C)
– 0.75 –
Reverse Recovery Time
(IS = 5.8 Adc, VGS = 0 Vdc,
VDS = 20 Vdc
dIS/dt = 100 A/µs)
trr – 23 – ns
ta – 12 –
tb – 11 –
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Reverse Recovery Stored Charge
6. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.
7. Switching characteristics are independent of operating junction temperature.
QRR
– 0.013 –
µC
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NTQD6866R2 | Power MOSFET ( Transistor ) | ON Semiconductor |
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