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NTQD6866R2 PDF даташит

Спецификация NTQD6866R2 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTQD6866R2
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTQD6866R2 Даташит, Описание, Даташиты
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NTQD6866R2
Power MOSFET
6.9 Amps, 20 Volts
N–Channel TSSOP–8
Features
New Low Profile TSSOP–8 Package
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperatures
Applications
Power Management in Portable and Battery–Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
Battery Applications
NoteBook PC
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6.9 AMPERES
20 VOLTS
30 m@ VGS = 4.5 V
N–Channel
D
N–Channel
D
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage
VDSS
20 Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR 20 Vdc
Gate–to–Source Voltage – Continuous
Thermal Resistance – Single Die
VGS
"12 Vdc
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Junction–to–Ambient (Note 1)
Total Power Dissipation @ TA = 25_C
Continuous Drain Current @ TA = 25_C
Pulsed Drain Current (Note 4)
RqJA
PD
ID
IDM
62.5 °C/W
2.0 W
6.9 Adc
24 Adc
Thermal Resistance – Single Die
Junction–to–Ambient (Note 2)
Total Power Dissipation @ TA = 25_C
Continuous Drain Current @ TA = 25_C
Continuous Drain Current @ TA = 70_C
Pulsed Drain Current (Note 4)
RqJA
PD
ID
ID
IDM
88 °C/W
1.42 W
5.8 Adc
4.6 Adc
20 Adc
Thermal Resistance – Single Die
Junction–to–Ambient (Note 3)
Total Power Dissipation @ TA = 25_C
Continuous Drain Current @ TA = 25_C
Continuous Drain Current @ TA = 70_C
Pulsed Drain Current (Note 4)
RqJA
PD
ID
ID
IDM
132 °C/W
0.94 W
4.7 Adc
3.8 Adc
14 Adc
1. Mounted onto a 2square FR–4 board (1sq. 2 oz Cu 0.06thick single sided),
t < 10 seconds.
2. Mounted onto a 2square FR–4 board (1sq. 2 oz Cu 0.06thick single sided),
t = 10 seconds.
3. Minimum FR–4 or G–10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.
G1 G2
S1 S2
TSSOP–8
8 CASE 948S
PLASTIC
1
MARKING DIAGRAM
& PIN ASSIGNMENT
S1 1
8D
G1
2 866 7
D
S2
3 YWW 6
D
G2 4
5D
Top View
866 = Device Code
YWW = Date Code
ORDERING INFORMATION
Device
Package
Shipping
NTQD6866R2
TSSOP–8 4000/Tape & Reel
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© Semiconductor Components Industries, LLC, 2001
September, 2001 – Rev. 1
1
Publication Order Number:
NTQD6866R2/D









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NTQD6866R2 Даташит, Описание, Даташиты
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NTQD6866R2
MAXIMUM RATINGS (continued)
Rating
Thermal Resistance – Both Die
Junction–to–Ambient (Note 5)
Total Power Dissipation @ TA = 25_C
Continuous Drain Current @ TA = 25_C
Pulsed Drain Current (Note 5)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 5.0 Vdc, Peak IL = 5.5 Apk, L = 10 mH, RG = 25 )
Maximum Lead Temperature for Soldering Purposes for 10 seconds
Symbol
RqJA
PD
ID
IDM
TJ, Tstg
EAS
TL
Value
Unit
160
0.78
4.3
14
–55 to +150
150
260
°C/W
W
Adc
Adc
°C
mJ
°C
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 20 Vdc, TJ = 25°C)
(VGS = 0 Vdc, VDS = 20 Vdc, TJ = 100°C)
Gate–Body Leakage Current (VGS = ±12 Vdc, VDS = 0 Vdc)
IDSS
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
VGS(th)
Static Drain–to–Source On–State Resistance
(VGS = 4.5 Vdc, ID = 6.9 Adc)
(VGS = 4.5 Vdc, ID = 5.8 Adc)
(VGS = 2.5 Vdc, ID = 3.5 Adc)
(VGS = 2.5 Vdc, ID = 2.9 Adc)
RDS(on)
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Forward Transconductance
(VDS = 10 Vdc, ID = 5.8 Adc)
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
5. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.
Ciss
Coss
Crss
Min
20
0.6
Typ Max Unit
Vdc
––
18.5 – mV/°C
µAdc
– 1.0
– 10
±100
nAdc
0.9
–2.7
0.026
0.025
0.030
0.030
14
1.2
0.032
0.030
0.038
0.038
Vdc
mV/°C
Mhos
875 1400 pF
325 550
100 175
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NTQD6866R2
ELECTRICAL CHARACTERISTICS (continued)
Characteristic
Symbol
Min
Typ
Max Unit
SWITCHING CHARACTERISTICS (Notes 6 & 7)
Turn–On Delay Time
td(on)
10 18 ns
Rise Time
Turn–Off Delay Time
(VDD = 16 Vdc, ID = 5.8 Adc,
VGS = 4.5 Vdc, RG = 6.0 )
tr
td(off)
45 80
40 75
Fall Time
tf – 90 150
Turn–On Delay Time
td(on)
8.0
ns
Rise Time
Turn–Off Delay Time
(VDD = 16 Vdc, ID = 5.8 Adc,
VGS = 4.5 Vdc, RG = 3.0 )
tr – 45 –
td(off)
35
Fall Time
tf – 75 –
Gate Charge
(VDS = 16 Vdc, VGS = 4.5 Vdc,
ID = 5.8 Adc)
Qtot –
13 22 nC
Qgs – 1.8 –
Qgd – 4.5 –
BODY–DRAIN DIODE RATINGS (Note 6)
Forward On–Voltage
(IS = 5.8 Adc, VGS = 0 Vdc)
VSD – 0.85 1.0 Vdc
(IS = 5.8 Adc, VGS = 0 Vdc, TJ = 100°C)
– 0.75 –
Reverse Recovery Time
(IS = 5.8 Adc, VGS = 0 Vdc,
VDS = 20 Vdc
dIS/dt = 100 A/µs)
trr – 23 – ns
ta – 12 –
tb – 11 –
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Reverse Recovery Stored Charge
6. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.
7. Switching characteristics are independent of operating junction temperature.
QRR
– 0.013 –
µC
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NTQD6866R2Power MOSFET ( Transistor )ON Semiconductor
ON Semiconductor

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