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NTQD6968 PDF даташит

Спецификация NTQD6968 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTQD6968
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTQD6968 Даташит, Описание, Даташиты
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NTQD6968
Power MOSFET
6.6 Amps, 20 Volts
N–Channel TSSOP–8
Features
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature Dual TSSOP–8 Surface Mount Package
Diode Exhibits High Speed, Soft Recovery
Micro8 Mounting Information Provided
Applications
Power Management in Portable and Battery–Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current – Continuous @ TA 25°C
Drain Current – Continuous @ TA 70°C
Drain Current – Pulsed (Note 3)
Total Power Dissipation @ TA 25°C
Drain Current – Continuous @ TA 25°C
Drain Current – Continuous @ TA 70°C
Drain Current – Pulsed (Note 3)
Total Power Dissipation @ TA 25°C
Operating and Storage Temperature Range
VDSS 20 Vdc
VGS
"12 Vdc
ID 5.4 Adc
ID 4.5
IDM 15
PD 0.94 W
ID Data6S.6heet4AUdc.com
ID 4.5
IDM 20
PD 1.42 W
TJ, Tstg –55 to
+150
°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 5.0 Vdc,
Peak IL = 5.5 Apk, L = 10 mH, RG = 25 )
Thermal Resistance –
Junction–to–Ambient (Note 1)
Junction–to–Ambient (Note 2)
EAS
RqJA
150 mJ
°C/W
132
88
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
TL 260 °C
1. Minimum FR–4 or G–10 PCB, Steady State.
2. Mounted onto a 2square FR–4 Board (1sq. 2oz. Cu 0.06thick single
sided), Steady State.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.
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6.6 AMPERES
20 VOLTS
RDS(on) = 22 m
N–Channel
D
N–Channel
D
G1 G2
S1 S2
TSSOP–8
8 CASE 948S
PLASTIC
1
MARKING DIAGRAM
& PIN ASSIGNMENT
D1
8
S1 2 968 7
S1
3
YWW
N
6
G1 4
5
Top View
968 = Device Code
Y = Year
WW = Work Week
N = MOSFET
D
S2
S2
G2
ORDERING INFORMATION
Device
Package
Shipping
NTQD6968
TSSOP–8 100 Units/Rail
NTQD6968R2
TSSOP–8 3000/Tape & Reel
DataShee
DataSheet4U.com
© Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 0
1
Publication Order Number:
NTQD6968/D









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NTQD6968 Даташит, Описание, Даташиты
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NTQD6968
et4U.com
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Collector Current
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 25°C)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current
(VGS = ±12 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
Static Drain–to–Source On–State Resistance
(VGS = 4.5 Vdc, ID = 6.6 Adc)
(VGS = 2.5 Vdc, ID = 5.3 Adc)
(VGS = 2.5 Vdc, ID = 3.3 Adc)
Forward Transconductance (VDS = 10 Vdc, ID = 6.6 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Notes 4 & 5)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
DataSheet4U.com
(VDD = 16 Vdc, ID = 6.6 Adc,
VGS = 4.5 Vdc, RG = 6.0 )
Fall Time
Gate Charge
(VDS = 16 Vdc,
VGS = 4.5 Vdc,
ID = 6.6 Adc)
BODY–DRAIN DIODE RATINGS (Note 4)
Forward On–Voltage
Reverse Recovery Time
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.15 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
4. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.
5. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qtot
Qgs
Qgd
VSD
trr
ta
tb
QRR
Min
20
0.6
Typ Max Unit
Vdc
––
12 – mV/°C
µAdc
– 1.0
– 10
nAdc
±100
Vdc
0.75 1.2
–2.5 – mV/°C
– 0.022
– 0.030
– 0.030
19.2 – Mhos
900 – pF
350 –
100 –
9.0 – ns
35 –
70 –
70 –
13.5 20 nC
3.0 –
4.0 –
– 1.2 Vdc
30 – ns
19 –
15 –
0.017
µC
DataShee
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NTQD6968 Даташит, Описание, Даташиты
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NTQD6968
16
14 5 V
12 3 V
2V
VGS = 10 V
TJ = 25°C
1.8 V
10
2.2 V
8
6
1.6 V
4 1.4 V
2
1.2 V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
18
VDS 10 V
16
14
12
10
8
6
TJ = 25°C
4
2 TJ = 100°C
TJ = –55°C
0
0.75 1 1.25 1.5 1.75 2 2.25
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.5
et4U.com
0.03 0.04
ID = 6.5 A
TJ = 25°C
TJ = 25°C
0.035
0.03
0.02
0.025
VGS = 2.5 V
0.01
0
0.02
DataSheet40U.0.1c5om
VGS = 4.5 V
24
6
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–to–Source Voltage
8
0.01
2 4 6 8 10 12 14
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2
ID = 3.3 A
VGS = 4.5 V
1.5
10000
VGS = 0 V
1000
TJ = 150°C
DataShee
1 100
TJ = 100°C
0.5 10
0
–50 –25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
150
1
4 8 12 16 20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage Current
versus Voltage
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http://onsemi.com
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