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Datasheet HAF1009 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HAF1009 | Silicon P Channel MOS FET Series Power Switching
HAF1009(L), HAF1009(S)
Silicon P Channel MOS FET Series Power Switching
REJ03G0029-0100Z (Previous ADE-208-1525 (Z)) Rev.1.00 May.13.2003
Description
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over t |  Renesas Technology | data |
HAF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HAF1001 | Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability HAF1001
Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut–down Capability
ADE-208-583 A (Z) 2nd Edition October 1997 Features
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–do  Hitachi Semiconductor data | | |
| 2 | HAF1002 | Silicon P Channel MOS FET Series Power Switching HAF1002(L), HAF1002(S)
Silicon P Channel MOS FET Series Power Switching
ADE-208-586 (Z) 1st. Edition October 1997 Features
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. Hitachi Semiconductor data | | |
| 3 | HAF1002L | Silicon P Channel MOS FET Series Power Switching HAF1002(L), HAF1002(S)
Silicon P Channel MOS FET Series Power Switching
ADE-208-586 (Z) 1st. Edition October 1997 Features
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. Hitachi Semiconductor data | | |
| 4 | HAF1002S | Silicon P Channel MOS FET Series Power Switching HAF1002(L), HAF1002(S)
Silicon P Channel MOS FET Series Power Switching
ADE-208-586 (Z) 1st. Edition October 1997 Features
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. Hitachi Semiconductor data | | |
| 5 | HAF1008 | Silicon P Channel MOS FET Series Power Switching HAF1008(L), HAF1008(S)
Silicon P Channel MOS FET Series Power Switching
REJ03G0027-0100Z Rev.1.00
May.13.2003
Description
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. A  Renesas data | | |
| 6 | HAF1008L | Silicon P Channel MOS FET Series Power Switching HAF1008(L), HAF1008(S)
Silicon P Channel MOS FET Series Power Switching
REJ03G0027-0100Z Rev.1.00
May.13.2003
Description
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. A Renesas data | | |
| 7 | HAF1008S | Silicon P Channel MOS FET Series Power Switching HAF1008(L), HAF1008(S)
Silicon P Channel MOS FET Series Power Switching
REJ03G0027-0100Z Rev.1.00
May.13.2003
Description
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. A Renesas data | |
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