H7N0308AB PDF даташит
Спецификация H7N0308AB изготовлена «Renesas Technology» и имеет функцию, называемую «Silicon N Channel MOS FET High Speed Power Switching». |
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Детали детали
Номер произв | H7N0308AB |
Описание | Silicon N Channel MOS FET High Speed Power Switching |
Производители | Renesas Technology |
логотип |
7 Pages
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H7N0308AB
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS (on) = 3.8 mΩ typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
123
G
D
S
REJ03G1122-0400
(Previous: ADE-208-1569B)
Rev.4.00
Sep 07, 2005
1. Gate
2. Drain (Flange)
3. Source
Rev.4.00 Sep 07, 2005 page 1 of 6
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H7N0308AB
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note: 3. Pulse test
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
Pch Note 2
θ ch-c
Tch
Tstg
Value
30
±20
70
280
70
100
1.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C/W
°C
°C
Symbol
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (off)
RDS (on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td (on)
tr
td (off)
tf
VDF
trr
(Ta = 25°C)
Min Typ Max Unit
Test Conditions
30 — —
±20 —
—
— — ±10
— — 10
1.0 — 2.5
— 3.8 4.8
— 6.0 8.5
54 90 —
— 3350 —
— 840 —
— 480 —
V ID = 10 mA, VGS = 0
V IG = ±100 µA, VDS = 0
µA VGS = ±16 V, VDS = 0
µA VDS = 30 V, VGS = 0
V ID = 1 mA, VDS = 10 V Note 3
mΩ ID = 35 A, VGS = 10 V Note 3
mΩ ID = 35 A, VGS = 4.5 V Note 3
S ID = 35 A, VDS = 10 V Note 3
pF VDS = 10 V
pF VGS = 0
pF f = 1 MHz
— 52 — nC VDD = 10 V
— 11 — nC VGS = 10 V
— 10 — nC ID = 70 A
— 30 —
— 370 —
— 80 —
ns VGS = 10 V, ID = 35 A
ns RL = 0.29 Ω
ns Rg = 4.7 Ω
— 27 — ns
— 0.93 —
— 60 —
V IF = 70 A, VGS = 0
ns IF = 70 A, VGS = 0
diF/dt = 50 A/µs
Rev.4.00 Sep 07, 2005 page 2 of 6
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H7N0308AB
Main Characteristics
Power vs. Temperature Derating
160
120
80
40
0
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
100
10 V
Pulse Test
80 4.5 V
3.5 V
60
3V
40
20
VGS = 2.5 V
0
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
500
Pulse Test
400
300
200 ID = 50 A
100 20 A
0 10 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.4.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
500
100
10
1
DC Operation
Operation in
1 ms 100
PW
= 10 ms
µs
10
µs
this area is
limited by RDS (on)
0.1
Tc = 25°C
1 shot Pulse
0.01
0.1 0.3 1 3 10 30 100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
100
VDS = 10 V
Pulse Test
80
60
40 25°C
Tc = 75°C
–25°C
20
0
012345
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
30
10 VGS = 4.5 V
3
10 V
1
0.3
0.1
1
3 10 30 100 300 1000
Drain Current ID (A)
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H7N0308AB | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
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