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PDF NLAS3799BL Data sheet ( Hoja de datos )
| Número de pieza | NLAS3799BL | |
| Descripción | Dual DPDT Ultra Low RON Switch | |
| Fabricantes | ON Semiconductor | |
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NLAS3799B, NLAS3799BL
Dual DPDT Ultra-Low RON
Switch
The NLAS3799B is an ultra−low RON dual DPDT and a 0.5 W RON
analog switch. This device is designed for low operating voltage, high
current switching of speaker output and earpiece for cellphone
applications. It can switch a balanced stereo output. The NLAS3799B
can handle a balanced microphone/speaker/ring−tone generator in a
monophone mode. The device contains a break−before−make (BBM)
feature.
Features
• Single Supply Operation
1.65 to 4.5 V VCC
Function Directly from LiON Battery
• Maximum Breakdown Voltage: 5.5 V
• Low Static Power
• NLAS3799B Interfaces with 2.8 V Chipset
NLAS3799BL Interfaces with 1.8 V Chipset
• These are Pb−Free Devices
Typical Applications
• Cell Phone Speaker/Microphone Switching
• Ringtone−Chip/Amplifier Switching
• Four Unbalanced (Single−Ended) Switches
• Stereo Balanced (Push−Pull) Switching
Important Information
• ESD Protection:
Human Body Model (HBM) > 8000 V
Machine Model (MM) > 400 V
• Continuous Current Rating Through each Switch ±300 mA
• Conforms to: JEDEC MO−220, Issue H, Variation VEED−6
• Package:
♦ 1.8 x 2.6 x 0.75 mm WQFN−16 Pb−Free
♦ 1.8 x 2.6 x 0.55 mm UQFN−16 Pb−Free
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MARKING
DIAGRAMS
ÇÇÇÇ16
1
XXMG
1 WQFN−16
CASE 488AP
G
ÇÇÇÇ16
1
1 XXMG
UQFN−16
G
CASE 488AU
XX = Specific Device Code
AK = NLAS3799BMNR2G
AL = NLAS3799BLMNR2G
AX = NLAS3799BMUR2G
M = Date Code/Assembly Location
G = Pb−Free Package
(Note: Microdot may be in either location)
COMA NOA Vcc NCD
16 15 14 13
NCA 1
A−B IN 2
NOB 3
COMB 4
12 COMD
11 NOD
10 C−D IN
9 NCC
5678
NCB GND NOCCOMC
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
© Semiconductor Components Industries, LLC, 2008
July, 2008 − Rev. 3
1
Publication Order Number:
NLAS3799B/D
1 page  
NLAS3799B, NLAS3799BL
NLAS3799BL DC CHARACTERISTICS − DIGITAL SECTION (Voltages Referenced to GND)
Symbol
VIH
Parameter
Minimum High−Level Input Voltage, Select
Inputs
Condition
VCC
3.0
4.3
VIL Maximum Low−Level Input Voltage, Select
Inputs
3.0
4.3
IIN
Maximum Input Leakage Current, Select
VIN = VCC or GND
Inputs
4.3
IOFF Power Off Leakage Current
ICC Maximum Quiescent Supply Current
(Note 6)
VIN = 4.5 V or GND
Select and VIS = VCC or GND
0
1.65 to 4.3
6. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.
Guaranteed Limit
25°C −40 to +85°C
1.3 1.3
1.6 1.6
0.5 0.5
0.6 0.6
±0.1 ±1.0
Unit
V
V
mA
±0.5 ±2.0 mA
±40 ±45 mA
NLAS3799BL DC ELECTRICAL CHARACTERISTICS − ANALOG SECTION
Guaranteed Maximum Limit
25°C
−40°C to +85°C
Symbol
RON
Parameter
NC/NO On−Resistance
(Note 7)
Condition
VIN = VIL or VIN = VIH
VIS = GND to VCC
IINI = 100 mA
VCC
Min Max Min
Max Unit
3.0 0.5
4.3 0.4
0.6 W
0.5
RFLAT
NC/NO On−Resistance Flatness
ICOM = 100 mA
3.0
0.15
0.15 W
(Notes 7 and 8)
VIS = 0 to VCC
4.3 0.15 0.15
DRON
On−Resistance Match Between Channels VIS = 1.5 V;
(Notes 7 and 9)
ICOM = 100 mA
3.0
0.05
0.05 W
VIS = 2.2 V;
4.3 0.05 0.05
ICOM = 100 mA
INC(OFF)
INO(OFF)
NC or NO Off Leakage Current (Note 7)
VIN = VIL or VIH
VNO or VNC = 0.3 V
VCOM = 4.0 V
4.3 −10 10 −100 100 nA
ICOM(ON)
COM ON
Leakage Current
(Note 7)
VIN = VIL or VIH
VNO 0.3 V or 4.0 V with
VNC floating or
VNC 0.3 V or 4.0 V with
VNO floating
VCOM = 0.3 V or 4.0 V
4.3
−10 10 −100 100 nA
7. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.
8. Flatness is defined as the difference between the maximum and minimum value of On−resistance as measured over the specified analog
signal ranges.
9. DRON = RON(MAX) − RON(MIN) between NC1 and NC2 or between NO1 and NO2.
http://onsemi.com
5
5 Page 
NLAS3799B, NLAS3799BL
PACKAGE DIMENSIONS
WQFN16, 1.8x2.6, 0.4P
CASE 488AP−01
ISSUE B
PIN 1 REFERENCE
D
ÉÉÉÉÉÉÉÉ
A
E
2X 0.15 C
2X 0.15 C
B
0.10 C
DETAIL B
A
0.08 C
DETAIL A
A1
A3
15 X L
4
5
8
9
LL
L1
DETAIL A
ALTERNATE TERMINAL
CONSTRUCTIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.25 AND 0.30 MM
FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED PAD
AS WELL AS THE TERMINALS.
5. EXPOSED PADS CONNECTED TO DIE FLAG.
USED AS TEST CONTACTS.
ÉÉÉÉÉÉ ÉÇÇÉÇÇEXPOSED Cu
MOLD CMPD
A3
A1
MILLIMETERS
DIM MIN MAX
A 0.70 0.80
A1 0.00 0.050
A3 0.20 REF
b 0.15 0.25
D 1.80 BSC
DETAIL B
ALTERNATE
CONSTRUCTIONS
E 2.60 BSC
e 0.40 BSC
L 0.30 0.50
L1 0.00 0.15
L2 0.40 0.60
SEATING
PLANE
MOUNTING FOOTPRINT*
C
0.562
0.0221
0.400
0.0157
1
16
L2
e
12
16 X
b
0.10 C A B
0.05 C NOTE 3
2.900
0.1142
1
1.200
0.0472
0.225
0.0089
0.463
0.0182
2.100
0.0827
ǒ ǓSCALE 20:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NLAS3799BL.PDF ] | |
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