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PDF HCP12C60 Data sheet ( Hoja de datos )
| Número de pieza | HCP12C60 | |
| Descripción | Silicon Controlled Rectifier | |
| Fabricantes | ETC | |
| Logotipo |  |
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Shantou Huashan Electronic Devices Co.,Ltd.
HCP12C60
Silicon Controlled Rectifier
█ Features
* Repetitive Peak Off-State Voltage : 600V
* R.M.S On-State Current(IT(RMS)=12A)
* Low On-State Voltage (1.3V(Typ.)@ ITM)
* Non-isolated Type
█ General Description
Standard gate triggering SCR is suitable for the application where
requiring high bi-directional blocking voltage capability and also
suitable for over voltage protection,motor control cicuit in power
tool,inrush current limit circuit and heating control system.
█ Absolute Maximum Ratings（Ta=25℃ unless otherwise specified）
Tstg——Storage Temperature ------------------------------------------------------ -40~125℃
Tj ——Operating Junction Temperature ---------------------------------------------- -40~125℃
VDRM ——Repetitive Peak Off-State Voltage -------------------------------------------------------------------- 600V
IT（RMS）——R.M.S On-State Current（180º Conduction Angles）---------------------------------------- 12A
IT(AV) ——Average On-State Current (Half Sine Wave : TC = 109 °C) ----------------------------------------7.6A
ITSM ——Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) -------------------------- 132A
I2t ——Circuit Fusing Considerations(t = 8.3ms) ------------------------------------------------------------ 87A2s
PGM ——Forward Peak Gate Power Dissipation (Ta=25℃) --------------------------------------------------- 5W
PG(AV) ——Forward Average Gate Power Dissipation (Ta=25℃,t=8.3ms) ---------------------------------0.5W
IFGM ——Forward Peak Gate Current -------------------------------------------------------------------------------- 2A
VRGM ——Reverse Peak Gate Voltage ------------------------------------------------------------------------------- 5V
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet HCP12C60.PDF ] | |
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