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PDF 74HCT2G17 Data sheet ( Hoja de datos )
| Número de pieza | 74HCT2G17 | |
| Descripción | Dual non-Inverting Schmitt Trigger | |
| Fabricantes | NXP Semiconductors | |
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74HC2G17; 74HCT2G17
Dual non-inverting Schmitt trigger
Rev. 01 — 6 October 2006
Product data sheet
1. General description
The 74HC2G17; 74HCT2G17 is a high-speed Si-gate CMOS device.
The 74HC2G17; 74HCT2G17 provides two non-inverting Schmitt trigger buffers. They are
capable of transforming slowly changing input signals into sharply defined, jitter-free
output signals.
The inputs switch at different points for positive and negative-going signals. The difference
between the positive voltage VT+ and the negative voltage VT− is defined as the input
hysteresis voltage VH.
2. Features
I Wide supply voltage range from 2.0 V to 6.0 V
I Complies with JEDEC standard no. 7A
I High noise immunity
I ESD protection:
N HBM JESD22-A114-D exceeds 2000 V
N MM JESD22-A115-A exceeds 200 V
I Low power dissipation
I Balanced propagation delays
I Unlimited input rise and fall times
I Multiple package options
I Specified from −40 °C to +85 °C and −40 °C to +125 °C
3. Applications
I Wave and pulse shaper for highly noisy environments
I Astable multivibrators
I Monostable multivibrators
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NXP Semiconductors
74HC2G17; 74HCT2G17
Dual non-inverting Schmitt trigger
Table 7. Static characteristics for 74HC2G17 …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
VOL LOW-level output voltage
II input leakage current
ICC supply current
CI input capacitance
Tamb = −40 °C to +85 °C
VOH HIGH-level output voltage
VOL LOW-level output voltage
II input leakage current
ICC supply current
Tamb = −40 °C to +125 °C
VOH HIGH-level output voltage
VI = VIH or VIL
IO = 20 µA; VCC = 2.0 V
IO = 20 µA; VCC = 4.5 V
IO = 20 µA; VCC = 6.0 V
IO = 4.0 mA; VCC = 4.5 V
IO = 5.2 mA; VCC = 6.0 V
VI = GND or VCC; VCC = 6.0 V
VI = GND or VCC; IO = 0 A;
VCC = 6.0 V
VI = VIH or VIL
IO = −20 µA; VCC = 2.0 V
IO = −20 µA; VCC = 4.5 V
IO = −20 µA; VCC = 6.0 V
IO = −4.0 mA; VCC = 4.5 V
IO = −5.2 mA; VCC = 6.0 V
VI = VIH or VIL
IO = 20 µA; VCC = 2.0 V
IO = 20 µA; VCC = 4.5 V
IO = 20 µA; VCC = 6.0 V
IO = 4.0 mA; VCC = 4.5 V
IO = 5.2 mA; VCC = 6.0 V
VI = GND or VCC; VCC = 6.0 V
VI = GND or VCC; IO = 0 A;
VCC = 6.0 V
VI = VIH or VIL
IO = −20 µA; VCC = 2.0 V
IO = −20 µA; VCC = 4.5 V
IO = −20 µA; VCC = 6.0 V
IO = −4.0 mA; VCC = 4.5 V
IO = −5.2 mA; VCC = 6.0 V
-
-
-
-
-
-
-
-
1.9
4.4
5.9
4.13
5.63
-
-
-
-
-
-
-
1.9
4.4
5.9
3.7
5.2
Typ
0
0
0
0.15
0.16
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
0.1
0.1
0.1
0.26
0.26
±0.1
1.0
-
-
-
-
-
-
0.1
0.1
0.1
0.33
0.33
±1.0
10.0
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
pF
V
V
V
V
V
V
V
V
V
V
µA
µA
V
V
V
V
V
74HC_HCT2G17_1
Product data sheet
4 U .com
Rev. 01 — 6 October 2006
© NXP B.V. 2006. All rights reserved.
5 of 18
5 Page 
www.DataSheet4U.com
NXP Semiconductors
100
ICC
(µA)
50
mna028
0
0
a. VCC = 2.0 V
1.0
VI (V)
2.0
1.6
ICC
(mA)
0.8
74HC2G17; 74HCT2G17
Dual non-inverting Schmitt trigger
1.0
ICC
(mA)
0.8
0.6
0.4
0.2
0
0
b. VCC = 4.5 V
mna030
mna029
2.5
VI (V)
5.0
0
0 3.0
c. VCC = 6.0 V
Fig 9. Typical 74HC2G17 transfer characteristics
VI (V)
6.0
74HC_HCT2G17_1
Product data sheet
4 U .com
Rev. 01 — 6 October 2006
© NXP B.V. 2006. All rights reserved.
11 of 18
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet 74HCT2G17.PDF ] | |
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