C2D10120 PDF даташит
Спецификация C2D10120 изготовлена «CREE» и имеет функцию, называемую «Silicon Carbide Schottky Diode». |
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Детали детали
Номер произв | C2D10120 |
Описание | Silicon Carbide Schottky Diode |
Производители | CREE |
логотип |
5 Pages
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C2D10120–Silicon Carbide Schottky Diode
Zero Recovery® Rectifier
Features
• 1200-Volt Schottky Rectifier
• Zero Reverse Recovery
• Zero Forward Recovery
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Swtitching
• Positive Temperature Coefficient on VF
Benefits
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies
• Power Factor Correction
• Motor Drives
Package
TO-220-2
PIN 1
PIN 2
Part Number
C2D10120A
VRRM = 1200 V
IF = 10 A
Qc = 61 nC
CASE
Package
TO-220-2
Marking
C2D10120
Maximum Ratings
Symbol
Parameter
Value Unit
Test Conditions
Note
VRRM
Repetitive Peak Reverse Voltage
1200 V
VRSM
Surge Peak Reverse Voltage
1200 V
VDC
IF(AVG)
IF(Peak)
DC Blocking Voltage
Average Forward Current
Peak Forward Current
1200
10
22
25
V
A TTCC==116205˚˚CC
A TC=125˚C, TREP<1 mS, Duty=0.5
IFRM Repetitive Peak Forward Surge Current
50 A TC=25˚C, tP=8.3 ms, Half Sine Wave
IFSM
Ptot
TJ , Tstg
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
250
312
104
-55 to
+175
A TC=25˚C, tP=10 µs, Pulse
W TTCC==2152˚5C˚C
˚C
Subject to change without notice.
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Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
1.6 1.8
2.5 3.0
10 200
20 1000
V
μA
QC Total Capacitive Charge
61
nC
C Total Capacitance
1000
80
59
pF
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
IIFF
=
=
10
10
A
A
TTJJ==2157°5C°C
VVRR
=
=
1200
1200
V
V
TTJJ==2155°0C°C
VdiR/d=t 1=205000V,AI/Fμ=s 10 A
TJ = 25°C
VVVRRR
=
=
=
0 V,
200
400
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Thermal Characteristics
Note
Symbol
Parameter
RθJC
Thermal Resistance from Junction
to Case
Typ.
0.48
Max.
Unit
°C/W
Test Conditions
Note
Typical Performance
20
18
TJ = 25˚C
16
TJ = 75˚C
TJ = 125˚C
TJ = 175˚C
14
12
10
8
6
4
2
0
0.0
1.0 2.0 3.0 4.0
VF Forward Voltage (V)
Figure 1. Forward Characteristics
5.0
200
180
160
140
120
100
80
60
40
20
0
0
TJ = 25˚C
TJ = 75˚C
TJ = 125˚C
TJ = 175˚C
500
1000
1500
VR Reverse Voltage (V)
2000
Figure 2. Reverse Characteristics
C2D10120 Rev. -
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Typical Performance
40
35
30
25
20
15
10
5
0
25 50 75 100 125 150 175 200
TC Case Temperture (°C)
Figure 3. Current Derating
1.00E+00
800
700
600
500
400
300
200
100
0
1
10 100
VR Reverse Voltage (V)
1000
Figure 4. Capacitance vs. Reverse Voltage
1.00E-01
1.00E-02
1.00E-03
1.00E-07
1.00E-06
1.00E-05
1.00E-04 1.00E-03
time [s]
1.00E-02
1.00E-01 1.00E+00
Figure 5. Transient Thermal Impedance
C2D10120 Rev. -
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Номер в каталоге | Описание | Производители |
C2D10120 | Silicon Carbide Schottky Diode | CREE |
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