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C2D10120 PDF даташит

Спецификация C2D10120 изготовлена ​​​​«CREE» и имеет функцию, называемую «Silicon Carbide Schottky Diode».

Детали детали

Номер произв C2D10120
Описание Silicon Carbide Schottky Diode
Производители CREE
логотип CREE логотип 

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C2D10120 Даташит, Описание, Даташиты
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C2D10120–Silicon Carbide Schottky Diode
Zero Recovery® Rectifier
Features
1200-Volt Schottky Rectifier
Zero Reverse Recovery
Zero Forward Recovery
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Swtitching
Positive Temperature Coefficient on VF
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies
Power Factor Correction
Motor Drives
Package
TO-220-2
PIN 1
PIN 2
Part Number
C2D10120A
VRRM = 1200 V
IF = 10 A
Qc = 61 nC
CASE
Package
TO-220-2
Marking
C2D10120
Maximum Ratings
Symbol
Parameter
Value Unit
Test Conditions
Note
VRRM
Repetitive Peak Reverse Voltage
1200 V
VRSM
Surge Peak Reverse Voltage
1200 V
VDC
IF(AVG)
IF(Peak)
DC Blocking Voltage
Average Forward Current
Peak Forward Current
1200
10
22
25
V
A TTCC==116205˚˚CC
A TC=125˚C, TREP<1 mS, Duty=0.5
IFRM Repetitive Peak Forward Surge Current
50 A TC=25˚C, tP=8.3 ms, Half Sine Wave
IFSM
Ptot
TJ , Tstg
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
250
312
104
-55 to
+175
A TC=25˚C, tP=10 µs, Pulse
W TTCC==2152˚5C˚C
˚C
Subject to change without notice.
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C2D10120 Даташит, Описание, Даташиты
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
1.6 1.8
2.5 3.0
10 200
20 1000
V
μA
QC Total Capacitive Charge
61
nC
C Total Capacitance
1000
80
59
pF
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
IIFF
=
=
10
10
A
A
TTJJ==2157°5C°C
VVRR
=
=
1200
1200
V
V
TTJJ==2155°0C°C
VdiR/d=t 1=205000V,AI/Fμ=s 10 A
TJ = 25°C
VVVRRR
=
=
=
0 V,
200
400
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Thermal Characteristics
Note
Symbol
Parameter
RθJC
Thermal Resistance from Junction
to Case
Typ.
0.48
Max.
Unit
°C/W
Test Conditions
Note
Typical Performance
20
18
TJ = 25˚C
16
TJ = 75˚C
TJ = 125˚C
TJ = 175˚C
14
12
10
8
6
4
2
0
0.0
1.0 2.0 3.0 4.0
VF Forward Voltage (V)
Figure 1. Forward Characteristics
5.0
200
180
160
140
120
100
80
60
40
20
0
0
TJ = 25˚C
TJ = 75˚C
TJ = 125˚C
TJ = 175˚C
500
1000
1500
VR Reverse Voltage (V)
2000
Figure 2. Reverse Characteristics
 C2D10120 Rev. -









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C2D10120 Даташит, Описание, Даташиты
Typical Performance
40
35
30
25
20
15
10
5
0
25 50 75 100 125 150 175 200
TC Case Temperture (°C)
Figure 3. Current Derating
1.00E+00
800
700
600
500
400
300
200
100
0
1
10 100
VR Reverse Voltage (V)
1000
Figure 4. Capacitance vs. Reverse Voltage
1.00E-01
1.00E-02
1.00E-03
1.00E-07
1.00E-06
1.00E-05
1.00E-04 1.00E-03
time [s]
1.00E-02
1.00E-01 1.00E+00
Figure 5. Transient Thermal Impedance
 C2D10120 Rev. -










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