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NCV7382 PDF даташит

Спецификация NCV7382 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Enhanced LIN Transceiver».

Детали детали

Номер произв NCV7382
Описание Enhanced LIN Transceiver
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NCV7382 Даташит, Описание, Даташиты
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NCV7382
Advance Information
Enhanced LIN Transceiver
The NCV7382 is a physical layer device for a single wire data link
capable of operating in applications where high data rate is not
required and a lower data rate can achieve cost reductions in both the
physical media components and in the microprocessor which uses
the network. The NCV7382 is designed to work in systems
developed for LIN 1.3 or LIN 2.0. The IC furthermore can be used in
ISO9141 systems.
Because of the very low current consumption of the NCV7382 in
the sleep mode it’s suitable for ECU applications with low standby
current requirements. This mode allows a shutdown of the whole
application. The included wake−up function detects incoming
dominant bus messages and enables the voltage regulator.
Features
Operating Voltage VS = 6.0 to 18 V
Very Low Standby Current Consumption of Typ. 6.5 mA in Sleep
Mode
LIN−Bus Transceiver:
Slew Rate Control for Good EMC Behavior
Fully Integrated Receiver Filter
BUS Input Voltage −27 V to 40 V
Integrated Termination Resistor for LIN Slave Nodes (30 kW)
Wake−Up Via LIN Bus
Baud Rate up to 20 kBaud
Will Work in Systems Designed for Either LIN 1.3 or LIN 2.0
Compatible to ISO9141 Functions
High EMI Immunity
Bus Terminals Protect Against Short−Circuits and Transients in the
Automotive Environment
High Impedance Bus Pin for Loss of Ground and Undervoltage
Condition
Thermal Overload Protection
High Signal Symmetry for use in RC−Based Slave Nodes up to 2%
Clock Tolerance when Compared to the Master Node
"4.0 kV ESD Protection on BUS, VS and INH Pins
Control Output for Voltage Regulator with Low On−Resistance for
Switchable Master Termination
NCV Prefix for Automotive and Other Applications Requiring Site
and Change Control
http://onsemi.com
8
1
SO−8
D SUFFIX
CASE 751
MARKING
DIAGRAM
8
V7382
ALYW
1
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
PIN CONNECTIONS
RxD 1
EN 2
VCC 3
TxD 4
8 INH
7 VS
6 BUS
5 GND
(Top View)
ORDERING INFORMATION
Device
Package
Shipping
NCV7382D
SO−8
95 Units/Rail
NCV7382DR2
SO−8 2500 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2004
May, 2004 − Rev. P1
1
Publication Order Number:
NCV7382/D









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NCV7382 Даташит, Описание, Даташиты
NCV7382
NCV7382
INH
VCC
TxD
Internal Supply
and
References
POR
Biasing &
Bandgap
SLEW RATE
CONTROL
Thermal
Shutdown
BUS Driver
EN
MODE
Wake−Up
CONTROL
Filter
RxD
Receive
Comparator
Input
Filter
VS
30 K
BUS
GND
Figure 1. Block Diagram
PACKAGE PIN DESCRIPTION
Pin Symbol
1 RXD
2 EN
3 VCC
4 TXD
5 GND
6 BUS
7 VS
8 INH
Description
Receive data from BUS to microprocessor, LOW in dominant state.
Enables the normal operation mode when HIGH.
5.0 V supply input.
Transmit data from microprocessor to BUS, LOW in dominant state.
Ground
LIN bus pin, LOW in dominant state.
Battery input voltage.
Control output for voltage regulator, termination pin for master pull up.
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NCV7382 Даташит, Описание, Даташиты
NCV7382
Electrical Specification
All voltages are referenced to ground (GND). Positive
currents flow into the IC.
The maximum ratings (in accordance with IEC 134)
given in the table below are limiting values that do not lead
OPERATING CONDITIONS
Characteristic
Battery Supply Voltage (Note 1)
Supply Voltage
Operating Ambient Temperature
to a permanent damage of the device but exceeding any of
these limits may do so. Long term exposure to limiting
values may effect the reliability of the device.
Symbol Min Max Unit
VS 6.0 18 V
VCC 4.5 5.5 V
TA −40 +125 °C
MAXIMUM RATINGS
Rating
Symbol
Condition
Min Max Unit
Battery Supply Voltage
VS t < 1 min
Load Dump, t < 500 ms
−0.3
30
40
V
Supply Voltage
Transient Supply Voltage
Transient Supply Voltage
Transient Supply Voltage
BUS Voltage
VCC
VS.tr1
VS..tr2
VS..tr3
VBUS
ISO 7637/1 Pulse 1 (Note 2)
ISO 7637/1 Pulses 2 (Note 2)
ISO 7637/1 Pulses 3A, 3B
t < 500 ms , Vs = 18 V
t < 500 ms ,Vs = 0 V
−0.3
−150
−150
−27
−40
+7.0
100
150
40
V
V
V
V
V
Transient Bus Voltage
Transient Bus Voltage
Transient Bus Voltage
DC Voltage on Pins TxD, RxD
ESD Capability of BUS, VS & INH Pins
VBUS..tr1
VBUS.tr2
VBUS.tr3
VDC
ESDHB
ISO 7637/1 Pulse 1 (Note 3)
ISO 7637/1 Pulses 2 (Note 3)
ISO 7637/1 Pulses 3A, 3B (Note 3)
Human body model, equivalent to
discharge 100 pF with 1.5 kW
−150
−150
−0.3
−4.0
100
150
7.0
4.0
V
V
V
V
kV
ESD Capability of RxD, TxD & Vcc Pins
ESDHB
Human body model, equivalent to
discharge 100 pF with 1.5 kW
−2.0 2.0 kV
Maximum Latch − Up Free Current at Any Pin
Maximum Power Dissipation
Thermal Impedance
Storage Temperature
Junction Temperature
Lead Temperature Soldering
Reflow: (SMD styles only)
ILATCH
Ptot
qJA
Tstg
TJ
Tsld
At TA = 125°C
In Free Air
60 second maximum above 183°C
−5°C/+0°C allowable conditions
−500
−55
−40
500
197
152
+150
+150
240 peak
mA
mW
°C/W
°C
°C
°C
1. VS is the IC supply voltage including voltage drop of reverse battery protection diode, VDROP = 0.4 to 1.0 V, VBAT_ECU voltage range is 7.0 to
18 V.
2. ISO 7637 test pulses are applied to VS via a reverse polarity diode and > 2.0 mF blocking capacitor.
3. ISO 7637 test pulses are applied to BUS via a coupling capacitance of 1.0 nF.
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