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NCV7702B PDF даташит

Спецификация NCV7702B изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «1A Dual H-Bridge Driver».

Детали детали

Номер произв NCV7702B
Описание 1A Dual H-Bridge Driver
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NCV7702B Даташит, Описание, Даташиты
NCV7702B
1 A Dual H-Bridge Driver
This dual full-bridge driver IC is intended for 14 V automotive
stepper and DC motor applications. Its four half-bridge outputs are
configured as two channels and are programmed by six TTL
compatible inputs, allowing flexible control of bridge operation. The
device operates in standby mode, run mode, or brake mode and
typically consumes less than 1 mA while in standby. In run mode,
each half-bridge output can deliver load current in either direction.
Brake mode activates the low side transistors or high side transistors
at the selected outputs. On-chip recirculation diodes are provided,
and the IC has multiple fault protection modes. Overcurrent
detection protects against shorted loads between outputs and shorts
to supply or ground at each output. An overcurrent fault condition
activates an internal timer, which modulates faulted outputs at low
duty cycle. An overcurrent condition in one channel does not affect
operation in the other. Overvoltage and overtemperature detection
are also provided, and turn off all bridge outputs during these fault
conditions. Recovery from all fault conditions is automatic; the IC
will resume normal operation in its previously selected mode upon
fault resolution. Diagnostic ability is provided by two open-collector
STATUS outputs which report the fault status of each channel
independently during overcurrent faults, and together during
overvoltage or overtemperature faults.
Features
ăSingle 7 V-16 V Supply
ăLow Standby Current:
ă< 1.0 mA Typically
ă3.3 V / 5 V Compatible Inputs
ăIndependent Channel Enable
ăChannels Configurable as:
ăFull-Bridge Drive
ăHalf-Bridge, High Side or Low Side Drive
ăOn-Chip Recirculation Diodes
ăFault Protection with Automatic Recovery for:
ăOvercurrent
ăOvervoltage
ăOvertemperature
ăFault Diagnostic STATUS Outputs
ăInternally Fused Leads in SO–24L Package
ăAEC Qualified
ăPPAP Capable
ăThese are Pb-Free Devices*
Applications
ăAutomotive and Industrial Driver for:
ăDC or Stepper Motors
ăRelays or Solenoids
ăUnipolar or Bipolar Loads
http://onsemi.com
24
1
SO-24L
DW SUFFIX
CASE 751E
MARKING DIAGRAM
24
NCV7702B
AWLYYWWG
1
A
WL
YY
WW
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb-Free Device
PIN CONNECTIONS
1
VB1
24
VB2
OUT1B
OUT2B
OUT1A
OUT2A
STATUS1
STATUS2
PGND
PGND
PGND
PGND
PGND
PGND
PGND
PGND
IN1A
IN1B
IN2A
IN2B
AGND
CT
EN1 EN2
ORDERING INFORMATION
Device
Package Shipping
NCV7702BDWG
SO-24L 31 Units/Rail
(Pb-Free)
NCV7702BDWR2G SO-24L 1000 Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
©Ă Semiconductor Components Industries, LLC, 2007
October, 2007 - Rev. 1
1
Publication Order Number:
NCV7702B/D









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NCV7702B Даташит, Описание, Даташиты
NCV7702B
STATUS1
OUT1A VB1 OUT1B
Bandgap
Regulator
VBG
VBG
OC
Overvolt.
OV
Overtemp.
OT
OUT2A VB2 OUT2B
OC
STATUS2
Overcurrent
Duty Cycle
OC OC
OV OV
OT OT
PGND PGND PGND PGND EN1 IN1A IN1B
CT AGND
IN2B IN2A EN2 PGND PGND PGND PGND
Figure 1. Block Diagram
MAXIMUM RATINGS
Rating
Value
Unit
Power Supply Voltage, VB
-0.5 to 30
V
Peak Transient Voltage (46 V Load Dump @ VB = 14 V)
60 V
Logic Inputs & Status Outputs
-0.3 to 7.0
V
Junction Temperature, TJ
Storage Temperature Range
150
-65 to 150
°C
°C
Package Thermal Resistance:
Junction-to-Case, RqJC
Junction-to-Ambient, RqJA
ESD Capability
Human Body Model
Machine Model
9 °C/W
55 °C/W
2.0 kV
200 V
Peak Reflow Soldering Temperature (60 to 150 seconds at 217°C) (Note 1)
260 peak
°C
Moisture Sensitivity Level (MSL)
3-
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
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NCV7702B Даташит, Описание, Даташиты
NCV7702B
ELECTRICAL CHARACTERISTICS (7.0 V v VB v 16 V, -40°C v TJ v 125°C; unless otherwise specified.) Notes 2 and 3.
Characteristic
Test Conditions
Min Typ
Max Unit
General Characteristics
Quiescent Current
Logic Inputs
High Level Input Voltage, VIH
Low Level Input Voltage, VIL
INX Input Current
ENX Input Current
ENX Delay, tPE
Standby Mode, VB 12.8 V
Run Mode, IOUT = 750 mA, Both Channels
-
-
-
-
VIN = 5.0 V
VIN = 0 V
VIN = 5.0 V
VIN = 0 V
50% of ENX to 50% of OUTX; Note 4 Turn ON
Turn Off
2.0
-
-
-5.0
-
-5.0
-
-
1.0
-
-
-
0
0
130
0
-
-
10 mA
40 mA
-V
0.8 V
5.0 mA
- mA
200 mA
5.0 mA
25 ms
60
Status Outputs
Saturation Voltage, VSL
Leakage Current
Half-Bridge Driver Outputs
Total Output Saturation Voltage
Output Saturation Voltage High
Output Saturation Voltage Low
Output Leakage
Overcurrent Threshold, IOC
ISTATUS = 4.0 mA
VSTATUS = 5.0 V
--
--
IOUT = 750 mA, Each Channel
IOUT = 750 mA, VB - VOUT, Each Driver
IOUT = 750 mA, VOUT - VPGND, Each Driver
VOUT = VB
VOUT = VPGND
Low Side, Each Channel
High Side, Each Channel
-
-
-
-
-5.0
0.9
0.775
2.5
1.25
1.25
0
0
1.25
0.900
0.4
10
3.0
1.6
1.6
5.0
-
1.6
1.10
V
mA
V
V
V
mA
mA
A
Overcurrent Duty Cycle
Switching Delay, tPI
Sink to Source
Source to Sink
Dead Band Time, tDB
Recirculation Diode Forward Voltage
Delay Timer
Charge Current, ICHG
Discharge Current, IDCH
Input Threshold High, VCH
Input Threshold Low, VDC
Global Fault Protection
Overtemperature Detection Threshold
Overtemperature Hysteresis
Overvoltage Detection Threshold
Overvoltage Hysteresis
470 pF CT 1500 pF; Note 5
50% of INX to 60% of OUTX; Note 6
50% of INX to 40% of OUTX; Note 6
Note 6
IDIODE = 750 mA
-
-
-
-
Note 7
Note 7
Note 8
-
3.0 4.0
0.20 -
0.20 -
0.10 -
--
-85 -65
1.25 2.0
1.85 2.0
200 300
150 -
- 15
26 28
500 850
6.0
14
10
10
2.5
-45
3.25
2.15
400
210
-
30
1200
%
ms
ms
V
mA
mA
V
mV
°C
°C
V
mV
2. Designed to meet these characteristics over the stated voltage and temperature recommended operating ranges, though may not be 100%
parametrically tested in production.
3. Operation is guaranteed down to VB = 6.0 V. Electrical characteristics may be outside the limits at that voltage.
4. See Figures 2 and 3; VB = 14 V, R = 100 W.
5. CT must remain in this range to guarantee proper operation, and to ensure part integrity, during hard short conditions.
6. See Figures 2 and 4; VB = 14 V, R = 100 W.
7. Guaranteed by design.
8. Consult factory for no overvoltage detection or lower overvoltage detection threshold options.
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
NCV7702B1A Dual H-Bridge DriverON Semiconductor
ON Semiconductor

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