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WSF128K16-xxx PDF даташит

Спецификация WSF128K16-xxx изготовлена ​​​​«White Electronic» и имеет функцию, называемую «128K X 16 SRAM /FLASH MODULE SMD 5962-96900».

Детали детали

Номер произв WSF128K16-xxx
Описание 128K X 16 SRAM /FLASH MODULE SMD 5962-96900
Производители White Electronic
логотип White Electronic логотип 

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WSF128K16-xxx Даташит, Описание, Даташиты
www.DataSheet4U.com
WSF128K16-XXX
128Kx16 SRAM/FLASH MODULE, SMD 5962-96900
FEATURES
n Access Times of 35ns (SRAM) and 70ns (FLASH)
n Access Times of 70ns (SRAM) and 120ns (FLASH)
n Packaging
• 66-pin, PGA Type, 1.075 inch square HIP, Hermetic
Ceramic HIP (Package 400)
• 66-pin, PGA Type, 1.185 inch square HIP, Hermetic
Ceramic HIP (Package 401)
n Built-in Decoupling Caps and Multiple Ground Pins for
Low Noise Operation
n Weight
• WSF128K16-XHX - 13 grams typical
• WSF128K16-H1X - 13 grams typical
• WSF128K16-XG1UX - 5 grams typical
FLASH MEMORY FEATURES
n 10,000 Erase/Program Cycles
• 68 lead, Hermetic CQFP (G1U), 22.4mm (0.880
inch) square (Package 519). Designed to fit JEDEC
68 lead 0.990” CQFJ footprint (Fig. 2)
n 128Kx16 SRAM
n 128Kx16 5V FLASH
n Sector Architecture
• 8 equal size sectors of 16K bytes each
• Any combination of sectors can be concurrently
erased.
Also supports full chip erase
n Organized as 128Kx16 of SRAM and 128Kx16 of Flash
Memory with separate Data Buses
n Both blocks of memory are User Configurable as
256Kx8
n Low Power CMOS
n Commercial, Industrial and Military Temperature Ranges
n TTL Compatible Inputs and Outputs
n 5 Volt Programming; 5V ± 10% Supply
n Embedded Erase and Program Algorithms
n Hardware Write Protection
n Page Program Operation and Internal Program Control
Time.
Note: For programming information refer to Flash Programming 1M5
Application Note.
FIG.1 PIN CONFIGURATION FOR WSF128K16-XHX AND WSF128K16-XH1X
TOP VIEW
P DIN ESCRIPTION
FD0-15 Flash Data Inputs/Outputs
SD0-15 SRAM Data Inputs/Outputs
A0-16
Address Inputs
SWE1-2
SRAM Write Enable
SCS1-2
SRAM Chip Selects
OE Output Enable
VCC Power Supply
GND Ground
NC Not Connected
FWE1-2
Flash Write Enable
FCS1-2
Flash Chip Select
B DLOCK IAGRAM
May 2001 Rev. 5
1 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com









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WSF128K16-xxx Даташит, Описание, Даташиты
WSF128K16-XXX
FIG. 2 PIN CONFIGURATION FOR WSF128K16-XG1UX
TOP VIEW
The WEDC 68 lead G1U CQFP
fills the same fit and function
as the JEDEC 68 lead CQFJ or
68 PLCC. But the G1U has the
TCE and lead inspection
advantage of the CQFP form.
P DIN ESCRIPTION
FD0-15 Flash Data Inputs/Outputs
SD0-15 SRAM Data Inputs/Outputs
A0-16
Address Inputs
SWE1-2
SRAM Write Enable
SCS1-2
SRAM Chip Selects
OE Output Enable
VCC Power Supply
GND Ground
NC Not Connected
FWE1-2
Flash Write Enable
FCS1-2
Flash Chip Select
B DLOCK IAGRAM
White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520
2









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WSF128K16-xxx Даташит, Описание, Даташиты
WSF128K16-XXX
A M RBSOLUTE AXIMUM ATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
TA
TSTG
VG
TJ
VCC
Min
-55
-65
-0.5
-0.5
Max
+125
+150
7.0
150
7.0
Unit
°C
°C
V
°C
V
Parameter
Flash Data Retention
10 years
Flash Endurance (write/erase cycles)
10,000
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage to
the device. Extended operation at the maximum levels may degrade
performance and affect reliability.
R O CECOMMENDED PERATING ONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
Min
Max
VCC 4.5
5.5
VIH 2.2 VCC + 0.3
VIL -0.5 +0.8
Unit
V
V
V
SRAM TRUTH TABLE
SCS
OE SWE
Mode
H X X Standby
L
LH
Read
L
HH
Read
L
XL
Write
Data I/O
High Z
Data Out
High Z
Data In
Power
Standby
Active
Active
Active
CAPACITANCE
(TA = +25°C)
Test
Symbol
Condition
Max
OE Capacitance
COE VIN = 0V, f = 1.0MHz 50
F/S WE 1-2 Capacitance
CWE VIN = 0V, f = 1.0MHz 20
F/S CS 1-2 Capacitance
CCS VIN = 0V, f = 1.0MHz 20
SD0-15/FD0-15 Capacitance CI/O VIN = 0V, f = 1.0MHz 20
A0 - A16 Capacitance
CAD VIN = 0V, f = 1.0MHz 50
This parameter is guaranteed by design but not tested.
Unit
pF
pF
pF
pF
pF
DC CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55°C TO +125°C)
Parameter
Input Leakage Current
Symbol
ILI
Conditions
VCC = 5.5, VIN = GND to VCC
Min
Output Leakage Current
I LO SCS = VIH, OE = VIH, VOUT = GND to VCC
SRAM Operating Supply Current x 16 Mode
ICCx16
SCS = VIL, OE = FCS = VIH, f = 5MHz, VCC = 5.5
Standby Current
ISB FCS = SCS = VIH, OE = VIH, f = 5MHz, VCC = 5.5
SRAM Output Low Voltage
VOL IOL = 2.1mA, VCC = 4.5
SRAM Output High Voltage
VOH IOH = -1.0mA, VCC = 4.5
2.4
Flash VCC Active Current for Read (1)
I CC1 FCS = VIL, OE = SCS = VIH
Flash VCC Active Current for Program or
Erase (2)
I CC2 FCS = VIL, OE = SCS = VIH
Flash Output Low Voltage
VOL IOL = 8.0mA, VCC = 4.5
Flash Output High Voltage
VOH1
IOH = -2.5 mA, VCC = 4.5
0.85 x VCC
Flash Output High Voltage
VOH2
IOH = -100 µA, VCC = 4.5
VCC -0.4
Flash Low VCC Lock Out Voltage
VLKO
3.2
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE at VIH.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
Max
10
10
360
40
0.4
100
130
0.45
Unit
µA
µA
mA
mA
V
V
mA
mA
V
V
V
V
3 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com










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Номер в каталогеОписаниеПроизводители
WSF128K16-xxx128K X 16 SRAM /FLASH MODULE SMD 5962-96900White Electronic
White Electronic

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