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Спецификация NTP6N50 изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTP6N50 |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
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NTP6N50
Preferred Devices
Product Preview
Power MOSFET
6 Amps, 500 Volts
N–Channel TO–220
Designed for high voltage, high speed switching applications in
power supplies, converters, power motor controls and bridge circuits.
Features
• Higher Current Rating
• Lower RDS(on)
• Lower Capacitances
• Lower Total Gate Charge
• Tighter VSD Specifications
• Avalanche Energy Specified
Typical Applications
• Switch Mode Power Supplies
• PWM Motor Controls
• Converters
• Bridge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
– Continuous
– Non–Repetitive (tpv10 ms)
Drain – Continuous @ TA 25°C
– Continuous @ TA 100°C
– Single Pulse (tpv10 µs)
Total Power Dissipation @ TA 25°C
Derate above 25°C
Total Power Dissipation @ TA 25°C (Note 1.)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
ID
ID
IDM
PD
TJ, Tstg
500
500
"20
"40
6.0
5.0
18
104
0.83
1.75
–55 to
+150
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
Watts
°C
Single Drain–to–Source Avalanche Energy –
Starting TJ = 25°C
(VDD = 100 V, VGS = 10 Vdc,
IL(pk) = 6 A, L = 10 mH, VDS = 500 Vdc,
RG = 25 Ω)
EAS
180 mJ
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
RθJC
RθJA
TL
°C/W
1.2
62.5
260 °C
1. Repetitive rating; pulse width limited by maximum junction temperature.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
6 AMPERES
500 VOLTS
RDS(on) = 1700 mΩ
N–Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
1
2
3
TO–220AB
CASE 221A
STYLE 5
NTP6N50
LLYWW
13
Gate
Source
2
Drain
NTP6N50 = Device Code
LL = Location Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP6N50
TO–220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2001
August, 2001 – Rev. 1
1
Publication Order Number:
NTP6N50/D
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NTP6N50
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 2.)
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
500
–
–
590
Vdc
–
– mV/°C
Zero Gate Voltage Drain Current
(VDS = 500 Vdc, VGS = 0 Vdc)
(VDS = 500 Vdc, VGS = 0 Vdc, TJ =125°C)
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
IDSS
IGSS
µAdc
– – 10
– – 100
–
–
±100
nAdc
VGS(th)
Vdc
2.0 3.1 4.0
– 6.4 – mV/°C
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 3 Adc)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 6 Adc)
(VGS = 10 Vdc, ID = 3 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 3 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 250 Vdc, ID = 6 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
Gate Charge
(VDS = 400 Vdc, ID = 6 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Note 2.)
(IS = 6 Adc, VGS = 0 Vdc)
(IS = 6 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
Reverse Recovery Stored
Charge
(IS = 6 Adc, VGS = 0 Vdc,
diS/dt = 100 A/µs)
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
VSD
trr
ta
tb
QRR
–
1300
1700
mΩ
V
– – 12.2
– – 11.0
– 6.7 – mhos
– 520 730 pF
– 170 240
– 5.0 20
– 9.0 20 ns
– 12 20
– 17 40
– 12 30
– 10 20 nC
– 3.0 –
– 6.0 –
– 0.9 1.0 Vdc
– 0.8 –
– 251 –
ns
– 168 –
– 83 –
– 2.3 – µC
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NTP6N50
10
TJ = 25°C
VGS = 10 V
9V
8 8V
6V
7V
6
5.5 V
4 5V
2 4 V 4.5 V
0
0 2 4 6 8 10 12 14 16 18 20 22 24
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
8
VDS ≥ 10 V
6
4
TJ = 25°C
2
TJ = 100°C
TJ = –55°C
0
34 56
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
7
4
VGS = 10 V
3
TJ = 100°C
3
TJ = 25°C
2.5
2
TJ = 25°C
1 TJ = –55°C
2 VGS = 10 V
VGS = 15 V
1.5
0
1234 5678
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
1
2 3 4 5 6 7 8 9 10
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.5
ID = 3 A
2 VGS = 10 V
1.5
10000
VGS = 0 V
1000
TJ = 150°C
1 TJ = 100°C
100
0.5
0
–50 –25
0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
150
10
100
150 200 250 300 350 400 450
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
500
Figure 6. Drain–to–Source Leakage Current
versus Voltage
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NTP6N50 | Power MOSFET ( Transistor ) | ON Semiconductor |
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