DataSheet26.com

NTP6N50 PDF даташит

Спецификация NTP6N50 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTP6N50
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

8 Pages
scroll

No Preview Available !

NTP6N50 Даташит, Описание, Даташиты
www.DataSheet4U.com
NTP6N50
Preferred Devices
Product Preview
Power MOSFET
6 Amps, 500 Volts
N–Channel TO–220
Designed for high voltage, high speed switching applications in
power supplies, converters, power motor controls and bridge circuits.
Features
Higher Current Rating
Lower RDS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
Typical Applications
Switch Mode Power Supplies
PWM Motor Controls
Converters
Bridge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 M)
Gate–Source Voltage
– Continuous
– Non–Repetitive (tpv10 ms)
Drain – Continuous @ TA 25°C
– Continuous @ TA 100°C
– Single Pulse (tpv10 µs)
Total Power Dissipation @ TA 25°C
Derate above 25°C
Total Power Dissipation @ TA 25°C (Note 1.)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
ID
ID
IDM
PD
TJ, Tstg
500
500
"20
"40
6.0
5.0
18
104
0.83
1.75
–55 to
+150
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
Watts
°C
Single Drain–to–Source Avalanche Energy –
Starting TJ = 25°C
(VDD = 100 V, VGS = 10 Vdc,
IL(pk) = 6 A, L = 10 mH, VDS = 500 Vdc,
RG = 25 )
EAS
180 mJ
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
RθJC
RθJA
TL
°C/W
1.2
62.5
260 °C
1. Repetitive rating; pulse width limited by maximum junction temperature.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
6 AMPERES
500 VOLTS
RDS(on) = 1700 m
N–Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
1
2
3
TO–220AB
CASE 221A
STYLE 5
NTP6N50
LLYWW
13
Gate
Source
2
Drain
NTP6N50 = Device Code
LL = Location Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP6N50
TO–220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2001
August, 2001 – Rev. 1
1
Publication Order Number:
NTP6N50/D









No Preview Available !

NTP6N50 Даташит, Описание, Даташиты
NTP6N50
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 2.)
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
500
590
Vdc
– mV/°C
Zero Gate Voltage Drain Current
(VDS = 500 Vdc, VGS = 0 Vdc)
(VDS = 500 Vdc, VGS = 0 Vdc, TJ =125°C)
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
IDSS
IGSS
µAdc
– – 10
– – 100
±100
nAdc
VGS(th)
Vdc
2.0 3.1 4.0
– 6.4 – mV/°C
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 3 Adc)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 6 Adc)
(VGS = 10 Vdc, ID = 3 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 3 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 250 Vdc, ID = 6 Adc,
VGS = 10 Vdc,
RG = 9.1 )
Gate Charge
(VDS = 400 Vdc, ID = 6 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Note 2.)
(IS = 6 Adc, VGS = 0 Vdc)
(IS = 6 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
Reverse Recovery Stored
Charge
(IS = 6 Adc, VGS = 0 Vdc,
diS/dt = 100 A/µs)
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperature.
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
VSD
trr
ta
tb
QRR
1300
1700
m
V
– – 12.2
– – 11.0
– 6.7 – mhos
– 520 730 pF
– 170 240
– 5.0 20
– 9.0 20 ns
– 12 20
– 17 40
– 12 30
– 10 20 nC
– 3.0 –
– 6.0 –
– 0.9 1.0 Vdc
– 0.8 –
– 251 –
ns
– 168 –
– 83 –
– 2.3 – µC
http://onsemi.com
2









No Preview Available !

NTP6N50 Даташит, Описание, Даташиты
NTP6N50
10
TJ = 25°C
VGS = 10 V
9V
8 8V
6V
7V
6
5.5 V
4 5V
2 4 V 4.5 V
0
0 2 4 6 8 10 12 14 16 18 20 22 24
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
8
VDS 10 V
6
4
TJ = 25°C
2
TJ = 100°C
TJ = –55°C
0
34 56
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
7
4
VGS = 10 V
3
TJ = 100°C
3
TJ = 25°C
2.5
2
TJ = 25°C
1 TJ = –55°C
2 VGS = 10 V
VGS = 15 V
1.5
0
1234 5678
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
1
2 3 4 5 6 7 8 9 10
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.5
ID = 3 A
2 VGS = 10 V
1.5
10000
VGS = 0 V
1000
TJ = 150°C
1 TJ = 100°C
100
0.5
0
–50 –25
0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
150
10
100
150 200 250 300 350 400 450
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
500
Figure 6. Drain–to–Source Leakage Current
versus Voltage
http://onsemi.com
3










Скачать PDF:

[ NTP6N50.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NTP6N50Power MOSFET ( Transistor )ON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск