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SCH1402 PDF даташит

Спецификация SCH1402 изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «ULTRAHIGH-SPEED SWITCHING APPLICATIONS».

Детали детали

Номер произв SCH1402
Описание ULTRAHIGH-SPEED SWITCHING APPLICATIONS
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

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SCH1402 Даташит, Описание, Даташиты
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Ordering number : ENN7533
SCH1402
N-Channel Silicon MOSFET
SCH1402
Ultrahigh-Speed Switching Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
Package Dimensions
unit : mm
2221
[SCH1402]
Top View
1.6
0.2
654
Side View
0.15
1 23
0.5
Side View
Bottom View
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
Specifications
Absolute Maximum Ratings at Ta=25°C
SANYO : SCH6
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
20
±10
3
12
0.8
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : KB
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
min
20
0.4
3.36
Ratings
typ
max
Unit
V
1 µA
±10 µA
1.3 V
5.6 S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31504 TS IM TA-100481 No.7533-1/4









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SCH1402 Даташит, Описание, Даташиты
SCH1402
Continued from preceding page.
Parameter
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1.5A, VGS=4V
ID=1A, VGS=2.5V
ID=0.5A, VGS=1.8V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4V, ID=3A
VDS=10V, VGS=4V, ID=3A
VDS=10V, VGS=4V, ID=3A
IS=3A, VGS=0
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10µs
D.C.1%
G
VDD=10V
ID=1.5A
RL=6.67
D VOUT
SCH1402
P.G 50S
Ratings
min typ max
Unit
63 82 m
73 102 m
87 133 m
280 pF
60 pF
38 pF
13 ns
35 ns
35 ns
25 ns
8.8 nC
0.85 nC
0.85 nC
0.82 1.2 V
ID -- VDS
3.0
2.5
2.0
1.5
VGS=1.0V
1.0
0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT05675
4.0
VDS=10V
3.5
ID -- VGS
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Gate-to-Source Voltage, VGS -- V IT03491
No.7533-2/4









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SCH1402 Даташит, Описание, Даташиты
SCH1402
RDS(on) -- VGS
160
Ta=25°C
140
160
140
RDS(on) -- Ta
120
1.0A
100
ID=0.5A 1.5A
80
60
120
100
80
I DIID=D=0=.151.A.05A,AV,,VGVGSG=SS=1=.284.V5.0VV
60
40 40
20
0
02468
Gate-to-Source Voltage, VGS -- V
yfs-- ID
3
2 VDS=10V
10
IT05676
10
7
5 25°C
3
2
Ta= --25°C
75°C
1.0
7
5
3
2
0.1
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Drain Current, ID -- A
IT03494
SW Time -- ID
3
2
VDD=10V
VGS=4V
100
7 tr
5 td(off)
tf
3
2 td(on)
10
7
5
3
2
1.0
0.1
23
4.0
VDS=10V
3.5 ID=3A
5 7 1.0
23
Drain Current, ID -- A
VGS -- Qg
5 7 10
IT03496
3.0
2.5
2.0
1.5
1.0
0.5
0
0 1 2 3 4 5 6 7 8 9 10
Total Gate Charge, Qg -- nC
IT03498
20
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT05677
IF -- VSD
10
7 VGS=0
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Diode Forward Voltage, VSD -- V IT03495
Ciss, Coss, Crss -- VDS
1000
f=1MHz
7
5
3 Ciss
2
100
7 Coss
5 Crss
3
2
10
0 2 4 6 8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS -- V IT03497
ASO
3
2 IDP=12A
<10µs
10
7
5 ID=3A
3
2
1.0
7
5
3
1ms
DC ope1ra0t0iomns 10ms
2
Operation in this
0.1 area is limited by RDS(on).
7
5
3 Ta=25°C
2 Single pulse
0.01 Mounted on a ceramic board(900mm2!0.8mm)
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Drain-to-Source Voltage, VDS -- V
23 5
IT05678
No.7533-3/4










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