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PDF NSR0320MW2T1 Data sheet ( Hoja de datos )

Número de pieza NSR0320MW2T1
Descripción Schottky Barrier Diodes
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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NSR0320MW2T1
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high current,
handling capability, and low forward voltage performance.
Features
Low Forward Voltage − 0.24 Volts (Typ) @ IF = 10 mAdc
High Current Capability
ESD Rating − Human Body Model: CLASS 3B
− Machine Model: C
Pb−Free Packages are Available
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Peak Revese Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR
VRM
PF
20 Vdc
23 V
200 mW
2.0 mW/°C
Forward Current (DC)
Continuous
IF A
1
Forward Current
t = 8.3 ms Half Sinewave
IF A
5
Junction Temperature
Storage Temperature Range
TJ 125 Max °C
Tstg − 55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
HIGH CURRENT
SCHOTTKY BARRIER DIODE
1
CATHODE
2
ANODE
2
1
SOD−323
CASE 477
STYLE 1
MARKING
DIAGRAM
RD MG
G
RD = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NSR0320MW2T1 SOD−323 3000/Tape & Reel
NSR0320MW2T1G SOD−323 3000/Tape & Reel
(Pb−Free)
NSR0320MW2T3G SOD−323 10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 1
Publication Order Number:
NSR0320MW2T1/D

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