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NCV1413B PDF даташит

Спецификация NCV1413B изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «High Current Darlington Transistor Arrays».

Детали детали

Номер произв NCV1413B
Описание High Current Darlington Transistor Arrays
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NCV1413B Даташит, Описание, Даташиты
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MC1413, MC1413B,
NCV1413B
High Voltage, High Current
Darlington Transistor Arrays
The seven NPN Darlington connected transistors in these arrays are
well suited for driving lamps, relays, or printer hammers in a variety of
industrial and consumer applications. Their high breakdown voltage
and internal suppression diodes insure freedom from problems
associated with inductive loads. Peak inrush currents to 500 mA
permit them to drive incandescent lamps.
The MC1413, B with a 2.7 kW series input resistor is well suited for
systems utilizing a 5.0 V TTL or CMOS Logic.
Features
Pb−Free Packages are Available*
1/7 MC1413, B
2.7 k
Pin 9
5.0 k
3.0 k
Figure 1. Representative Schematic Diagram
1 16
2 15
3 14
4 13
5 12
6 11
7 10
89
(Top View)
Figure 2. PIN CONNECTIONS
http://onsemi.com
16
1
16
1
PDIP−16
P SUFFIX
CASE 648
SOIC−16
D SUFFIX
CASE 751B
ORDERING INFORMATION
Device
MC1413D
MC1413DR2
MC1413DR2G
MC1413P
MC1413PG
MC1413BD
MC1413BDR2
MC1413BDR2G
MC1413BP
Package
Shipping
SOIC−16
SOIC−16
SOIC−16
(Pb−Free)
PDIP−16
PDIP−16
(Pb−Free)
48 Units/Rail
2500 Tape & Reel
2500 Tape & Reel
500 Units/Rail
500 Units/Tubes
SOIC−16
48 Units/Rail
SOIC−16 2500 Tape & Reel
SOIC−16
(Pb−Free)
PDIP−16
2500 Tape & Reel
500 Units/Rail
NCV1413BDR2 SOIC−16 2500 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2004
April, 2004 − Rev. 6
1
Publication Order Number:
MC1413/D









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NCV1413B Даташит, Описание, Даташиты
MC1413, MC1413B, NCV1413B
MAXIMUM RATINGS (TA = 25°C, and rating apply to any one device in the package, unless otherwise noted.)
Rating
Symbol
Value
Output Voltage
Input Voltage
Collector Current − Continuous
Base Current − Continuous
Operating Ambient Temperature Range
MC1413
MC1413B
NCV1413B
VO 50
VI 30
IC 500
IB 25
TA
−20 to +85
−40 to +85
−40 to +125
Storage Temperature Range
Junction Temperature
Thermal Resistance, Junction−to−Ambient
Case 648, P Suffix
Case 751B, D Suffix
Tstg
TJ
RqJA
−55 to +150
150
67
100
Thermal Resistance, Junction−to−Case
Case 648, P Suffix
Case 751B, D Suffix
RqJC
22
20
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
Charged Device Model (CDM)
ESD
2000
400
1500
Unit
V
V
mA
mA
°C
°C
°C
°C/W
°C/W
V
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Output Leakage Current
(VO = 50 V, TA = +85°C)
(VO = 50 V, TA = +25°C)
Collector−Emitter Saturation Voltage
(IC = 350 mA, IB = 500 mA)
(IC = 200 mA, IB = 350 mA)
(IC = 100 mA, IB = 250 mA)
Input Current − On Condition
(VI = 3.85 V)
Input Voltage − On Condition
(VCE = 2.0 V, IC = 200 mA)
(VCE = 2.0 V, IC = 250 mA)
(VCE = 2.0 V, IC = 300 mA)
Input Current − Off Condition
(IC = 500 mA, TA = 85°C)
DC Current Gain
(VCE = 2.0 V, IC = 350 mA)
Input Capacitance
Turn−On Delay Time
(50% EI to 50% EO)
Turn−Off Delay Time
(50% EI to 50% EO)
Clamp Diode Leakage Current
(VR = 50 V)
Clamp Diode Forward Voltage
(IF = 350 mA)
All Types
All Types
All Types
All Types
All Types
MC1413, B
MC1413, B
MC1413, B
MC1413, B
All Types
ICEX
VCE(sat)
II(on)
VI(on)
II(off)
hFE
CI
ton
toff
TA = +25°C
TA = +85°C
IR
VF
−−
−−
− 1.1
− 0.95
− 0.85
− 0.93
−−
−−
−−
50 100
1000
− 15
− 0.25
− 0.25
−−
−−
− 1.5
100
50
1.6
1.3
1.1
1.35
2.4
2.7
3.0
30
1.0
1.0
50
100
2.0
mA
V
mA
V
mA
pF
ms
ms
mA
V
NOTE: NCV1413B Tlow = −40°C, Thigh = +125°C. Guaranteed by design. NCV prefix is for automotive and other applications requiring
site and change control.
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NCV1413B Даташит, Описание, Даташиты
MC1413, MC1413B, NCV1413B
TYPICAL PERFORMANCE CURVES − TA = 25°C
400 400
300
MC1413, B
200
300 All Types
200
100 100
0
0 1.0 2.0 3.0 4.0 5.0 8.0 9.0 10 11 12
VI, INPUT VOLTAGE (V)
Figure 3. Output Current versus Input Voltage
0
0 50 100 150 200 250 300 350 400
II, INPUT CURRENT (mA)
Figure 4. Output Current versus Input Current
800
700
600
500 1 Output Conducting at a Time
400
PIN 10
PIN 13
PIN 16
300
200
100
0
0
All Types
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VCE(sat), SATURATION VOLTAGE (V)
Figure 5. Typical Output Characteristics
1.6
2.5
2.0
Maximum
1.5
Typical
1.0
0.5
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
VI, INPUT VOLTAGE (V)
Figure 6. Input Characteristics − MC1413, B
1000
700
500
300
200
100
10
20 30
50
% DUTY CYCLE
70
Figure 7. Maximum Collector Current
versus Duty Cycle
(and Number of Drivers in Use)
1
2
3
4
5
6
7
100
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Номер в каталогеОписаниеПроизводители
NCV1413High Current Darlington Transistor ArraysON Semiconductor
ON Semiconductor
NCV1413BHigh Current Darlington Transistor ArraysON Semiconductor
ON Semiconductor

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