PDF W530-02 Data sheet ( Hoja de datos )

Número de pieza	W530-02
Descripción	Peak-reducing EMI Solution
Fabricantes	Cypress Semiconductor
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No Preview Available ! www.DataSheet4U.com W530-02 Frequency-multiplying, Peak-reducing EMI Solution Features • Cypress PREMIS™ SMARTSPREAD™ family offering • Generates an electromagnetic-interference (EMI)-optimized clocking signal at the output • Selectable frequency range and multiplication factor • Single 1.25%, 2.5%, 5%, or 10%, down or center spread output • Integrated loop filter components • Operates with a 3.3V or 5V supply • Low-power CMOS design • Higher drive strength, higher frequency support than W530 • Available in 20-pin SSOP Key Specifications Supply Voltages:....................................... VDD = 3.3V ± 0.3V or VDD = 5V ± 10% Frequency Range:......................... 13 MHz ≤ Fout ≤ 166 MHz Cycle to Cycle Jitter: ........................................250 ps (max.) Output Duty Cycle: ............................... 40/60% (worst case) Table 1. Output Frequency Range Selection OR OR 21 Output Range (Multiplication Factor Selection) 00 01 10 11 reserved 13 MHz ≤ FOUT ≤ 30 MHz 25 MHz ≤ FOUT ≤ 60 MHz 50 MHz ≤ FOUT ≤ 166 MHz Table 2. Modulation Width Selection MW2 MW1 MW0 Output 000 001 Fin ≥ Fout ≥ Fin –1.25% Favg + 0.625% ≥ Fout ≥ Favg – 0.625% 010 Fin ≥ Fout ≥ Fin – 2.5% 0 1 1 Favg + 1.25% ≥ Fout ≥ Favg – 1.25% 100 Fin ≥ Fout ≥ Fin – 5% 1 0 1 Favg + 2.5% ≥ Fout ≥ Favg – 2.5% 110 Fin ≥ Fout ≥ Fin – 10% 111 Favg + 5% ≥ Fout ≥ Favg – 5% Table 3. Input Frequency Range Selection IR2 IR1 Input Range 00 reserved 01 10 11 13 MHz ≤ FIN ≤ 30 MHz 25 MHz ≤ FIN ≤ 60 MHz 50 MHz ≤ FIN ≤ 166 MHz Cypress Semiconductor Corporation • 3901 North First Street • San Jose, CA 95134 • 408-943-2600 Document #: 38-07190 Rev. A Revised January 7, 2003 1 page W530-02 Absolute Maximum Ratings Stresses greater than those listed in this table may cause permanent damage to the device. These represent a stress rating only. Operation of the device at these or any other condi- Parameter Description VDD, VIN TSTG TA TB PD Voltage on any Pin with Respect to GND Storage Temperature Operating Temperature Ambient Temperature under Bias Power Dissipation tions above those specified in the operating sections of this specification is not implied. Maximum conditions for extended periods may affect reliability. Rating Unit –0.5 to +7.0 V –65 to +150 °C 0 to +70 °C –55 to +125 °C 0.5 W DC Electrical Characteristics: 0°C < TA < 70°C, VDD = 3.3V ±0.3V Parameter Description Test Condition IDD Supply Current tON Power-Up Time First locked clock cycle after Power Good VIL VIH VOL VOH IIL IIH IOL IOH CI RP ZOUT Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage Input Low Current Input High Current Output Low Current Output High Current Input Capacitance Input Pull-Up Resistor Clock Output Impedance Note 2 Note 2 @ 0.4V, VDD = 3.3V @ 2.4V, VDD = 3.3V Min. 2.4 2.4 Typ. 18 15 15 80 25 Max. 32 5 0.8 0.4 –100 10 7 Unit mA ms V V V V µA µA mA mA pF kΩ Ω DC Electrical Characteristics: 0°C < TA < 70°C, VDD = 5V ±10% Parameter Description Test Condition IDD Supply Current tON Power-Up Time First locked clock cycle after Power Good VIL Input Low Voltage VIH Input High Voltage VOL Output Low Voltage VOH Output High Voltage IIL Input Low Current Note 2 IIH Input High Current Note 2 IOL Output Low Current @ 0.4V, VDD = 5V IOH Output High Current @ 2.4V, VDD = 5V CI Input Capacitance RP Input Pull-Up Resistor ZOUT Clock Output Impedance Note: 2. Inputs OR1:2 and IR1:2 have a pull-up resistor, Input SSON# has a pull-down resistor. Min. 0.7VDD 2.4 Typ. 30 24 24 80 25 Max. 50 5 Unit mA ms 0.15VDD 0.4 –100 10 7 V V V V µA µA mA mA pF kΩ Ω Document #: 38-07190 Rev. A Page 5 of 8 5 Page

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