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S29CL016J PDF даташит

Спецификация S29CL016J изготовлена ​​​​«SPANSION» и имеет функцию, называемую «(S29CD016J / S29CL016J) Simultaneous Read/Write Flash Memory».

Детали детали

Номер произв S29CL016J
Описание (S29CD016J / S29CL016J) Simultaneous Read/Write Flash Memory
Производители SPANSION
логотип SPANSION логотип 

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S29CL016J Даташит, Описание, Даташиты
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S29CD016J/S29CL016J
Known Good Die
16 Megabit (512k x 32-Bit) CMOS 2.6 or 3.3 Volt-only
Burst Mode, Dual Boot,
Simultaneous Read/Write Flash Memory
Supplement (Advance Information)
General Description
The Spansion S29CD016J and S29CL016J devices are Floating Gate products fabricated in 110 nm process technology.
These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two
separate banks. These products can operate up to 56 MHz and use a single VCC of 2.5 V to 2.75 V (S29CD-J) or 3.0 V to 3.6 V
(S29CL-J) that make them ideal for today’s demanding automotive applications.
Distinctive Characteristics
„ Single 2.6 V (S29CD-J) or 3.3 V (S29CL-J) for read/program/
erase
„ 110 nm Floating Gate Technology
„ Simultaneous Read/Write operation with zero latency
„ X32 Data Bus
„ Dual Boot Sector Configuration (top and bottom)
„ Flexible Sector Architecture
– CD016J & CL016J: Eight 2K Double word, Thirty-two 16K Double
word, and Eight 2K Double Word sectors
„ VersatileI/O™ control (1.65 V to VCC)
„ Programmable Burst Interface
– Linear for 2, 4, and 8 double word burst with or without wrap around
„ Secured Silicon Sector that can be either factory or customer
locked
„ 20 year data retention (typical)
„ Cycling Endurance: 100,000 write cycles per sector (typical)
„ Command set compatible with JECEC (42.4) standard
„ Supports Common Flash Interface (CFI)
„ Persistent and Password methods of Advanced Sector
Protection
„ Unlock Bypass program command to reduce programming
time
„ Write operation status bits indicate program and erase
operation completion
„ Hardware (WP#) protection of two outermost sectors in the
large bank
„ Ready/Busy (RY/BY#) output indicates data available to
system
„ Suspend and Resume commands for Program and Erase
Operation
Performance Characteristics
Read Access Times
Speed Option (MHz)
Max Asynch. Access Time, ns (tACC)
Max Synch. Latency, ns (tIACC)
Max Synch. Burst Access, ns (tBACC)
Max CE# Access Time, ns (tCE)
Max OE# Access time, ns (tOE)
56
64
64
10
69
22
40
67
67
17
71
22
Current Consumption (Max values)
Continuous Burst Read @ 56 MHz
Program
Erase
Standby Mode
90 mA
50 mA
50 mA
150 µA
Typical Program and Erase Times
Double Word Programming
Sector Erase
18 µs
1.0 s
Publication Number S29CD016J-CL016J_KGD_SP
Revision A Amendment 2
Issue Date September 20, 2006
This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. Do not design in
this product without contacting the factory. Spansion Inc. reserves the right to change or discontinue work on this proposed product without notice.









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S29CL016J Даташит, Описание, Даташиты
Supplement (Advance Information)
Table of Contents
General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Distinctive Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Performance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
S29CD/CL016J Features. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1. Die Photograph. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2. Die Pad Locations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3. Pad Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4. Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.1 Valid Combinations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5. Packaging Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.1 Surftape Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.2 Waffle Pack Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
6. Product Test Flow. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
7. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
8. Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
9. Physical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
10. Manufacturing Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
11. Special Handling Instructions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
11.1 Processing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
11.2 Storage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12. DC Characteristics for KGD Devices at 145°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13. Terms and Conditions of Sale for Spansion Non-Volatile Memory Die. . . . . . . . . . . . . . . . . . . . . 14
14. Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
List of Figures
Figure 6.1
Figure 7.1
Figure 7.2
Spansion KGD Product Test Flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Maximum Negative Overshoot Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Maximum Positive Overshoot Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
List of Tables
Table 3.1
Table 12.1
Pads Relative To Die Center . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
DC Characteristics, CMOS Compatible . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
2
S29CD016J/S29CL016J Known Good Die
Revision A2 September 20, 2006









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S29CL016J Даташит, Описание, Даташиты
Supplement (Advance Information)
S29CD/CL016J Features
The S29CD016J & S29CL016J Flash devices are burst mode, dual boot, simultaneous read/write Flash
memories with VersatileI/O™ manufactured on 110 nm process technology.
The S29CD016J is a 16 megabit, 2.6 volt-only, single-power-supply, burst mode Flash memory device that
can be configured for 524,288 double words. The S29CL016J is the 3.3 volt-only version of that device. Both
devices can be programmed in standard EPROM programmers.
To eliminate bus contention, each device has separate chip enable (CE#), write enable (WE#) and output
enable (OE#) controls. Additional control inputs are required for synchronous burst operations: Load Burst
Address Valid (ADV#), and Clock (CLK).
Each device requires only a single 2.6 volt-only (2.50 V – 2.75 V) or 3.3 volt-only (3.00 V – 3.60 V) for both
read and write functions. A 12.0-volt VPP is not required for program or erase operations, although an
acceleration pin is available if faster programming performance is required.
The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. The
software command set is compatible with the command sets of the 5 V Am29F and 3 V Am29LV Flash
families. Commands are written to the command register using standard micro-processor write timing.
Register contents serve as inputs to an internal state-machine that controls the erase and programming
circuitry. Write cycles also internally latch addresses and data needed for the programming and erase
operations. Reading data out of the device is similar to reading from other Flash or EPROM devices.
The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program
data instead of four.
The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space
into two banks. The device can begin programming or erasing in one bank, and then simultaneously read
from the other bank, with zero latency. This releases the system from waiting for the completion of program or
erase operations.
The device provides a 256-byte Secured Silicon Sector with an one-time-programmable (OTP) mechanism.
In addition, the device features several levels of sector protection, which can disable both the program and
erase operations in certain sectors or sector groups: Persistent Sector Protection is a command sector
protection method that replaces the old 12 V controlled protection method; Password Sector Protection is a
highly sophisticated protection method that requires a password before changes to certain sectors or sector
groups are permitted; WP# Hardware Protection prevents program or erase in the two outermost 8 Kbytes
sectors of the larger bank.
The device defaults to the Persistent Sector Protection mode. The customer must then choose if the
Standard or Password Protection method is most desirable. The WP# Hardware Protection feature is always
available, independent of the other protection method chosen.
The VersatileI/O™ (VCCQ) feature allows the output voltage generated on the device to be determined based
on the VIO level. This feature allows this device to operate in the 1.8 V I/O environment, driving and receiving
signals to and from other 1.8 V devices on the same bus.
The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin,
by reading the DQ7 (Data# Polling), or DQ6 (toggle) status bits. After a program or erase cycle has been
completed, the device is ready to read array data or accept another command.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully erased when shipped from the factory.
Hardware data protection measures include a low VCC detector that automatically inhibits write operations
during power transitions. The password and software sector protection feature disables both program and
erase operations in any combination of sectors of memory. This can be achieved in-system at VCC level.
The Program/Erase Suspend/Erase Resume feature enables the user to put erase on hold for any period of
time to read data from, or program data to, any sector that is not selected for erasure. True background erase
can thus be achieved.
The hardware RESET# pin terminates any operation in progress and resets the internal state machine to
reading array data.
September 20, 2006 Revision A2
S29CD016J/S29CL016J Known Good Die
3










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