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S71AL016D PDF даташит

Спецификация S71AL016D изготовлена ​​​​«SPANSION» и имеет функцию, называемую «Stacked Multi-Chip Product (MCP) Flash Memory and RAM».

Детали детали

Номер произв S71AL016D
Описание Stacked Multi-Chip Product (MCP) Flash Memory and RAM
Производители SPANSION
логотип SPANSION логотип 

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S71AL016D Даташит, Описание, Даташиты
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S71AL016D based MCPs
Stacked Multi-Chip Product (MCP) Flash Memory and
RAM
16 Megabit (1 M x 16-bit) CMOS 3.0 Volt-only
Flash Memory and 2 Megabit (128K x 16-bit) Static RAM/
Pseudo Static RAM
ADVANCE
INFORMATION
Distinctive Characteristics
MCP Features
„ Power supply voltage of 2.7 to 3.1 volt
„ High performance
— 70 ns
„ Packages
— 7 x 9 x 1.2 mm 56 ball FBGA
„ Operating Temperature
— –25°C to +85°C (Wireless)
General Description
The S71AL series is a product line of stacked Multi-Chip Product (MCP) packages
and consists of:
„ One S29AL Flash memory die
„ pSRAM or SRAM
The products covered by this document are listed in the table below:
SRAM Density
2Mb
Flash Memory Density
16Mb
S71AL016D02
Publication Number S71AL016D_02_04_00 Revision A Amendment 1 Issue Date November 11, 2004









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S71AL016D Даташит, Описание, Даташиты
Preliminary
Product Selector Guide
16 Mb Flash Memory
Device-Model#
S71AL016D02-TF
S71AL016D02-BF
S71AL016D02-T7
S71AL016D02-B7
Flash Access time (ns)
70
70
70
70
SRAM density
2 M SRAM
2 M SRAM
2 M SRAM
2 M SRAM
(p)SRAM Access time (ns) SRAM type
70 SRAM2
70 SRAM2
70 SRAM1
70 SRAM1
Package
TLC056
TLC056
TLC056
TLC056
2
S71AL016D based MCPs
S71AL016D_02_04_00_A1 November 11, 2004









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S71AL016D Даташит, Описание, Даташиты
Advance Information
TABLE OF CONTENTS
S71AL016D based MCPs
Distinctive Characteristics . . . . . . . . . . . . . . . . . . . 1
MCP Features ........................................................................................................ 1
General Description . . . . . . . . . . . . . . . . . . . . . . . . 1
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . .2
16 Mb Flash Memory .............................................................................................2
Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . .6
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . .8
Valid Combinations . . . . . . . . . . . . . . . . . . . . . . . . .9
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . . 10
TLC056—56-ball Fine-Pitch Ball Grid Array (FBGA)
9 x 7 mm Package ............................................................................................... 10
S29AL016D
General Description 12
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 1. S29AL016D Device Bus Operations .......................... 15
Word/Byte Configuration .................................................................................15
Requirements for Reading Array Data ..........................................................15
Writing Commands/Command Sequences ................................................. 16
Program and Erase Operation Status ........................................................... 16
Standby Mode ....................................................................................................... 16
Automatic Sleep Mode .......................................................................................17
RESET#: Hardware Reset Pin ..........................................................................17
Output Disable Mode .........................................................................................17
Table 2. Sector Address Tables (Top Boot Device) ................. 18
Table 3. Sector Address Tables (Bottom Boot Device) ............ 19
Autoselect Mode ................................................................................................ 20
Table 4. S29AL016D Autoselect Codes (High Voltage Method) . 20
Sector Protection/Unprotection ................................................................... 20
Temporary Sector Unprotect ......................................................................... 21
Figure 1. Temporary Sector Unprotect Operation.................... 21
Figure 2. In-System Sector Protect/Unprotect Algorithms ........ 22
Common Flash Memory Interface (CFI) . . . . . . .23
Table 5. CFI Query Identification String ................................ 23
Table 6. System Interface String ......................................... 24
Table 7. Device Geometry Definition .................................... 24
Table 8. Primary Vendor-Specific Extended Query ................. 25
Hardware Data Protection ..............................................................................25
Low VCC Write Inhibit ..................................................................................25
Write Pulse “Glitch” Protection ................................................................25
Logical Inhibit .................................................................................................. 26
Power-Up Write Inhibit ............................................................................... 26
Reading Array Data ............................................................................................27
Reset Command ..................................................................................................27
Autoselect Command Sequence ....................................................................27
Word/Byte Program Command Sequence ................................................ 28
Unlock Bypass Command Sequence ........................................................ 28
Figure 3. Program Operation................................................ 29
Chip Erase Command Sequence ................................................................... 29
Sector Erase Command Sequence ................................................................ 30
Erase Suspend/Erase Resume Commands ....................................................31
Figure 4. Erase Operation.................................................... 32
Command Definitions ........................................................................................33
Table 9. S29AL016D Command Definitions ........................... 33
November 11, 2004 S71AL016D_02_04_00_A1
Write Operation Status . . . . . . . . . . . . . . . . . . . . 34
DQ7: Data# Polling ............................................................................................ 34
Figure 5. Data# Polling Algorithm ........................................ 35
RY/BY#: Ready/Busy# ....................................................................................... 35
DQ6: Toggle Bit I ............................................................................................... 36
DQ2: Toggle Bit II .............................................................................................. 36
Reading Toggle Bits DQ6/DQ2 ..................................................................... 37
Figure 6. Toggle Bit Algorithm ............................................. 38
DQ5: Exceeded Timing Limits ........................................................................ 38
DQ3: Sector Erase Timer ................................................................................ 39
Table 10. Write Operation Status ......................................... 39
Figure 7. Maximum Negative Overshoot Waveform ................ 40
Figure 8. Maximum Positive Overshoot Waveform.................. 40
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 9. ICC1 Current vs. Time (Showing Active and
Automatic Sleep Currents).................................................. 42
Figure 10. Typical ICC1 vs. Frequency ................................... 43
Figure 11. Test Setup......................................................... 44
Table 11. Test Specifications ............................................... 44
Figure 12. Input Waveforms and Measurement Levels ............ 45
Read Operations .................................................................................................46
Figure 13. Read Operations Timings..................................... 46
Hardware Reset (RESET#) .............................................................................. 47
Figure 14. RESET# Timings................................................. 47
Word/Byte Configuration (BYTE#) ...........................................................48
Figure 15. BYTE# Timings for Read Operations...................... 48
Figure 16. BYTE# Timings for Write Operations ..................... 49
Erase/Program Operations ..............................................................................50
Figure 17. Program Operation Timings ................................. 51
Figure 18. Chip/Sector Erase Operation Timings .................... 52
Figure 19. Data# Polling Timings (During Embedded Algorithms)..
53
Figure 20. Toggle Bit Timings (During Embedded Algorithms).. 53
Figure 21. DQ2 vs. DQ6 for Erase and Erase Suspend Operations .
54
Figure 22. Temporary Sector Unprotect/Timing Diagram......... 54
Figure 23. Sector Protect/Unprotect Timing Diagram .............. 55
Figure 24. Alternate CE# Controlled Write Operation Timings .. 57
TSOP and BGA Pin Capacitance . . . . . . . . . . . . 58
2Mbit Type 1 SRAM
Common Features . . . . . . . . . . . . . . . . . . . . . . . . 59
Functional Description . . . . . . . . . . . . . . . . . . . . . 60
Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
These parameters are verified in device
characterization and are not 100% tested. . . . . . 60
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 60
Operating Characteristics (Over Specified
Temperature Range) . . . . . . . . . . . . . . . . . . . . . . . 61
Figure 1. Power Savings with Page Mode (WE# = VIH) ........... 62
Timing Test Conditions . . . . . . . . . . . . . . . . . . . . 62
Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . 64
Figure 2. Timing of Read Cycle (CE# = OE# = VIL, WE# = CE2=
VIH) ................................................................................. 64
Figure 3. Timing Waveform of Read Cycle (WE# = VIH) .......... 64
Figure 4. Timing Waveform of Write Cycle (WE# Control) ....... 65
Figure 5. Timing Waveform of Write Cycle (CE1# Control) ...... 65
3










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Номер в каталогеОписаниеПроизводители
S71AL016DStacked Multi-Chip Product (MCP) Flash Memory and RAMSPANSION
SPANSION
S71AL016MStacked Multi-Chip Product (MCP) Flash Memory and RAMSPANSION
SPANSION

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