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NTMD6N02R2 PDF даташит

Спецификация NTMD6N02R2 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTMD6N02R2
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTMD6N02R2 Даташит, Описание, Даташиты
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NTMD6N02R2
Power MOSFET
6.0 Amps, 20 Volts
N−Channel Enhancement Mode
Dual SO−8 Package
Features
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature Dual SO−8 Surface Mount Package
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
SO−8 Mounting Information Provided
Applications
DC−DC Converters
Low Voltage Motor Control
Power Management in Portable and Battery−Powered Products, for
example, Computers, Printers, Cellular and Cordless Telephones and
PCMCIA Cards
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
VDSS
20
Drain−to−Gate Voltage (RGS = 1.0 MW)
VDGR
20
Gate−to−Source Voltage − Continuous
VGS "12
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Pulsed Drain Current (Note 4)
RθJA
PD
ID
ID
IDM
62.5
2.0
6.5
5.5
50
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Pulsed Drain Current (Note 4)
RθJA
PD
ID
ID
IDM
102
1.22
5.07
4.07
40
Thermal Resistance −
Junction−to−Ambient (Note 3)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Pulsed Drain Current (Note 4)
RθJA
PD
ID
ID
IDM
172
0.73
3.92
3.14
30
1. Mounted onto a 2square FR−4 Board
(1sq. 2 oz. Cu 0.06thick single sided), t < 10 seconds.
2. Mounted onto a 2square FR−4 Board
(1sq. 2 oz. Cu 0.06thick single sided), t = steady state.
3. Minimum FR−4 or G−10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
V
V
V
°C/W
W
A
A
A
°C/W
W
A
A
A
°C/W
W
A
A
A
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VDSS
20 V
RDS(ON) TYP
35 m@ VGS = 4.5 V
ID MAX
6.0 A
N−Channel
D
G
S
8
1
SO−8
CASE 751
STYLE 11
MARKING DIAGRAM
& PIN ASSIGNMENT
Source 1
Gate 1
Source 2
Gate 2
1
2
3
4
E6N02
LYWW
8
Drain 1
7
Drain 1
6
Drain 2
5
Drain 2
(Top View)
E6N02 = Device Code
L = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTMD6N02R2
SO−8
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
April, 2004 − Rev. 2
1
Publication Order Number:
NTMD6N02R2/D









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NTMD6N02R2 Даташит, Описание, Даташиты
NTMD6N02R2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (continued)
Rating
Symbol
Operating and Storage Temperature Range
TJ, Tstg
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 5.0 Vdc, Peak IL = 6.0 Apk, L = 20 mH, RG = 25 )
EAS
Maximum Lead Temperature for Soldering Purposes for 10 seconds
TL
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 5)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 25°C)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = +12 Vdc, VDS = 0 Vdc)
Gate−Body Leakage Current (VGS = −12 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = −250 mAdc)
Temperature Coefficient (Negative)
IDSS
IGSS
IGSS
VGS(th)
0.6
Static Drain−to−Source On−State Resistance
(VGS = 4.5 Vdc, ID = 6.0 Adc)
(VGS = 4.5 Vdc, ID = 4.0 Adc)
(VGS = 2.7 Vdc, ID = 2.0 Adc)
(VGS = 2.5 Vdc, ID = 3.0 Adc)
RDS(on)
Forward Transconductance (VDS = 12 Vdc, ID = 3.0 Adc)
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS (Notes 6 and 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 16 Vdc, ID = 6.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 )
td(on)
tr
td(off)
tf
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 16 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 )
td(on)
tr
td(off)
tf
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
(VDS = 16 Vdc,
VGS = 4.5 Vdc,
ID = 6.0 Adc)
Qtot
Qgs
Qgd
5. Handling precautions to protect against electrostatic discharge is mandatory
6. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.
7. Switching characteristics are independent of operating junction temperature.
Value
−55 to +150
360
260
Unit
°C
mJ
°C
Typ Max Unit
19.2
0.9
−3.0
0.028
0.028
0.033
0.035
10
1.0
10
100
−100
Vdc
mV/°C
mAdc
nAdc
nAdc
1.2
0.035
0.043
0.048
0.049
Vdc
mV/°C
Mhos
785
1100
pF
260 450
75 180
12 20 ns
50 90
45 75
80 130
11 18 ns
35 65
45 75
60 110
12 20 nC
1.5 −
4.0 −
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NTMD6N02R2 Даташит, Описание, Даташиты
NTMD6N02R2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued) (Note 8)
Characteristic
Symbol
Min
BODY−DRAIN DIODE RATINGS (Note 9)
Diode Forward On−Voltage
(IS = 4.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
Reverse Recovery Time
(IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
trr
ta
tb
Reverse Recovery Stored Charge
QRR
8. Handling precautions to protect against electrostatic discharge is mandatory.
9. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.
Typ
0.83
0.88
0.75
30
15
15
0.02
Max Unit
1.1 Vdc
1.2
− ns
mC
12
10 V
10
8
6
2.5 V
4.5 V
3.2 V
2.0 V
TJ = 25°C
1.8 V
4
2 VGS = 1.5 V
0
0 0.25 0.5 0.75 1 1.25 1.5 1.75
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
12
VDS 10 V
10
8
6
4
100°C
25°C
2 TJ = −55°C
0
0.5 1 1.5 2 2.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.07
0.06
0.05
ID = 6.0 A
TJ = 25°C
0.04
0.03
0.02
0.01
0
0
2468
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−To−Source Voltage
10
0.05
0.04
0.03
TJ = 25°C
VGS = 2.5 V
4.5 V
0.02
0.01
1
3 5 7 9 11
ID, DRAIN CURRENT (AMPS)
13
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
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