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SDB55N02 PDF даташит

Спецификация SDB55N02 изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «N-Channel E nhancement Mode Field E ffect Transistor».

Детали детали

Номер произв SDB55N02
Описание N-Channel E nhancement Mode Field E ffect Transistor
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

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SDB55N02 Даташит, Описание, Даташиты
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S amHop Microelectronics C orp.
S DP /B 55N02
May,2004 ver1.1
N-Channel E nhancement Mode Field E ffect Transistor
4 P R ODUC T S UMMAR Y
F E AT UR E S
V DS S ID R DS (on) ( m W ) Max
S uper high dense cell design for extremely low R DS (ON).
High power and current handling capability.
20V 32A
19 @ VGS = 4.5V
TO-220 & TO-263 package.
D
GS
S DB S E R IE S
T O -263(DD-P AK )
G
D
S
S DP S E R IE S
TO-220
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
S ymbol
VDS
VGS
Limit
20
12
Drain C urrent-C ontinuous @ TJ=125 C
-P ulsed a
ID
IDM
23
57
Drain-S ource Diode Forward C urrent
IS
55
Maximum P ower Dissipation @ Tc=25 C
PD
75
Operating and S torage Temperature R ange
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
TJ, TSTG
R JC
R JA
-65 to 175
2
62.5
1
Unit
V
V
A
A
A
W
C
C /W
C /W









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SDB55N02 Даташит, Описание, Даташиты
S DP /B 55N02
E LE CTR ICAL CHAR ACTE R IS TICS (TC =25 C unless otherwise noted)
P a ra meter
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS a
Gate Threshold Voltage
S ymbol Condition
Min TypC Max Unit
BVDSS VGS =0V, ID =250uA
IDSS VDS =16V, VGS = 0V
IGSS VGS = 8V, VDS =0V
20
V
10 uA
100 nA
VGS(th) VDS =VGS, ID = 250uA 0.9 1 1.5 V
4
Drain-S ource On-S tate R esistance R DS(ON) VGS = 4.5V, ID = 21A
14 19 m ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS b
ID(ON)
gFS
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS b
Turn-On Delay Time
tD(ON)
R ise Time
tr
Turn-Off Delay Time
tD(O F F )
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 10V, VGS = 10V
VDS = 10V, ID = 26A
VDS =15V, VGS = 0V
f =1.0MHZ
VDD = 10V,
ID = 1A,
VGS = 10V
R GEN = 6 ohm
VDS =10V, ID = 30A,
VGS =4.5V
2
40
53
1100
600
180
50
62.5
200
89
18.2
5.3
2.2
A
S
PF
PF
PF
ns
ns
ns
ns
nC
nC
nC









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SDB55N02 Даташит, Описание, Даташиты
S DP /B 55N02
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
4
P a ra meter
S ymbol Condition
Min Typ Max Unit
DRAIN-SOURCE DIODE CHARACTERISTICS a
Diode Forward Voltage
VSD VGS = 0V, Is =26A
0.9 1.3 V
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
80
70
60 V GS =10,9,8,7,6,5,4V
50
40
30
20 V GS =3V
10
0
0 0.5 1.0 1.5 2.0 2.5 3.0
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
3000
2500
2000
1500
1000
C is s
500 C oss
C rss
0
0 5 10 15 20 25
30
V DS , Drain-to S ource Voltage (V )
F igure 3. C apacitance
75
-55 C
60
45 25 C
30
15
T J=125 C
0
0 1 2 3 4 56
V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
1.60
ID=26A
1.40 V GS =10V
1.20
1.00
0.80
0.60
0.40
-50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C )
F igure 4. On-R es is tance Variation
with Temperature
3










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