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NE3511S02 PDF даташит

Спецификация NE3511S02 изготовлена ​​​​«CEL» и имеет функцию, называемую «X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET».

Детали детали

Номер произв NE3511S02
Описание X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Производители CEL
логотип CEL логотип 

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NE3511S02 Даташит, Описание, Даташиты
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HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3511S02
X TO Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Super low noise figure and high associated gain
NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz
• Micro-X plastic (S02) package
APPLICATIONS
• X to Ku-band DBS LNB
• Other X to Ku-band communication systems
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
NE3511S02-T1C NE3511S02-T1C-A S02 (Pb-Free) 2 kpcs/reel
NE3511S02-T1D NE3511S02-T1D-A
10 kpcs/reel
Marking
Supplying Form
B • 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3511S02-A
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IG
Ptot Note
Tch
Tstg
Ratings
4
3
IDSS
100
165
+125
65 to +125
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Unit
V
V
mA
µA
mW
°C
°C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PG10642EJ01V0DS (1st edition)
Date Published October 2006 NS CP(N)
2006









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NE3511S02 Даташит, Описание, Даташиты
NE3511S02
RECOMMENDED OPERATING CONDITIONS (TA = +25°C)
Parameter
Drain to Source Voltage
Drain Current
Input Power
Symbol
VDS
ID
Pin
MIN.
1
5
TYP.
2
10
MAX.
3
20
0
Unit
V
mA
dBm
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
Symbol
Test Conditions
IGSO VGS = 3 V
IDSS VDS = 2 V, VGS = 0 V
VGS (off) VDS = 2 V, ID = 100 µA
gm VDS = 2 V, ID = 10 mA
NF VDS = 2 V, ID = 10 mA, f = 12 GHz
Ga
MIN.
20
0.2
50
12.5
TYP.
0.5
40
0.7
65
0.30
13.5
MAX.
10
70
1.7
0.45
Unit
µA
mA
V
mS
dB
dB
2 Data Sheet PG10642EJ01V0DS









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NE3511S02 Даташит, Описание, Даташиты
NE3511S02
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
200
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
80
150
100
50
0 50 100 150 200 250
Ambient Temperature TA (˚C)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
80
VDS = 2 V
60
60
40 VGS = 0 V
–0.2 V
20
–0.4 V
–0.6 V
0 1.0 2.0
Drain to Source Voltage VDS (V)
40
20
0
–2.0
–1.0
Gate to Source Voltage VGS (V)
0
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
2.0 25
1.8
VDS = 2 V
ID = 10 mA
1.6 20
1.4
Ga
1.2
15
1.0
0.8 10
0.6
NFmin
0.4
5
0.2
0.0 0
0 2 4 6 8 10 12 14 16 18 20
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
1.6
f = 12 GHz
1.4 VDS = 2 V
16
14
1.2 Ga 12
1.0 10
0.8 8
0.6 6
0.4 NFmin 4
0.2 2
0.0 0
0 5 10 15 20 25
Drain Current ID (mA)
Data Sheet PG10642EJ01V0DS
3










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Номер в каталогеОписаниеПроизводители
NE3511S02X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FETCEL
CEL

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