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S29PL129N PDF даташит

Спецификация S29PL129N изготовлена ​​​​«SPANSION» и имеет функцию, называемую «Page-Mode Flash Memory».

Детали детали

Номер произв S29PL129N
Описание Page-Mode Flash Memory
Производители SPANSION
логотип SPANSION логотип 

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S29PL129N Даташит, Описание, Даташиты
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S29PL-N MirrorBit™ Flash Family
29PL256N, S29PL127N, S29PL129N,
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only
Simultaneous Read/Write, Page-Mode Flash Memory
Data Sheet
PRELIMINARY
Notice to Readers: This document indicates states the current technical
specifications regarding the Spansion product(s) described herein. The
Preliminary status of this document indicates that a product qualification has
been completed, and that initial production has begun. Due to the phases of
the manufacturing process that require maintaining efficiency and quality, this
document may be revised by subsequent versions or modifications due to
changes in technical specifications.
Publication Number S29PL-N_00 Revision A Amendment 4 Issue Date November 23, 2005









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S29PL129N Даташит, Описание, Даташиты
Preliminary
Notice On Data Sheet Designations
Spansion LLC issues data sheets with Advance Information or Preliminary designations to advise
readers of product information or intended specifications throughout the product life cycle, includ-
ing development, qualification, initial production, and full production. In all cases, however,
readers are encouraged to verify that they have the latest information before finalizing their de-
sign. The following descriptions of Spansion data sheet designations are presented here to
highlight their presence and definitions.
Advance Information
The Advance Information designation indicates that Spansion LLC is developing one or more spe-
cific products, but has not committed any design to production. Information presented in a
document with this designation is likely to change, and in some cases, development on the prod-
uct may discontinue. Spansion LLC therefore places the following conditions upon Advance
Information content:
“This document contains information on one or more products under development at Spansion LLC. The
information is intended to help you evaluate this product. Do not design in this product without con-
tacting the factory. Spansion LLC reserves the right to change or discontinue work on this proposed
product without notice.”
Preliminary
The Preliminary designation indicates that the product development has progressed such that a
commitment to production has taken place. This designation covers several aspects of the product
life cycle, including product qualification, initial production, and the subsequent phases in the
manufacturing process that occur before full production is achieved. Changes to the technical
specifications presented in a Preliminary document should be expected while keeping these as-
pects of production under consideration. Spansion places the following conditions upon
Preliminary content:
“This document states the current technical specifications regarding the Spansion product(s) described
herein. The Preliminary status of this document indicates that product qualification has been completed,
and that initial production has begun. Due to the phases of the manufacturing process that require
maintaining efficiency and quality, this document may be revised by subsequent versions or modifica-
tions due to changes in technical specifications.”
Combination
Some data sheets will contain a combination of products with different designations (Advance In-
formation, Preliminary, or Full Production). This type of document will distinguish these products
and their designations wherever necessary, typically on the first page, the ordering information
page, and pages with DC Characteristics table and AC Erase and Program table (in the table
notes). The disclaimer on the first page refers the reader to the notice on this page.
Full Production (No Designation on Document)
When a product has been in production for a period of time such that no changes or only nominal
changes are expected, the Preliminary designation is removed from the data sheet. Nominal
changes may include those affecting the number of ordering part numbers available, such as the
addition or deletion of a speed option, temperature range, package type, or VIO range. Changes
may also include those needed to clarify a description or to correct a typographical error or incor-
rect specification. Spansion LLC applies the following conditions to documents in this category:
“This document states the current technical specifications regarding the Spansion product(s) described
herein. Spansion LLC deems the products to have been in sufficient production volume such that sub-
sequent versions of this document are not expected to change. However, typographical or specification
corrections, or modifications to the valid combinations offered may occur.”
Questions regarding these document designations may be directed to your local AMD or Fujitsu
sales office.
ii
S29PL-N MirrorBit™ Flash Family
S29PL-N_00_A4 November 23, 2005









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S29PL129N Даташит, Описание, Даташиты
S29PL-N MirrorBit™ Flash Family
S29PL256N, S29PL127N, S29PL129N,
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only
Simultaneous Read/Write, Page-Mode Flash Memory
Data Sheet
PRELIMINARY
General Description
The Spansion S29PL-N is the latest generation 3.0-Volt page mode read family fabricated using the 110 nm MirrorbitTM
Flash process technology. These 8-word page-mode Flash devices are capable of performing simultaneous read and write
operations with zero latency on two separate banks. These devices offer fast page access times of 25 to 30 ns, with
corresponding random access times of 65 ns, 70 ns, and 80 ns respectively, allowing high speed microprocessors to op-
erate without wait states. The S29PL129N device offers the additional feature of dual chip enable inputs (CE1# and
CE2#) that allow each half of the memory space to be controlled separately.
Distinctive Characteristics
Architectural Advantages
Hardware Features
„ 32-Word Write Buffer
„ Dual Chip Enable Inputs (only for S29PL129N)
— Two CE# inputs control selection of each half of the
memory space
„ Single Power Supply Operation
— Full Voltage range of 2.7 – 3.6 V read, erase, and
program operations for battery-powered applications
— Voltage range of 2.7 – 3.1 V valid for PL-N MCP
products
„ Simultaneous Read/Write Operation
— Data can be continuously read from one bank while
executing erase/program functions in another bank
— Zero latency switching from write to read operations
„ 4-Bank Sector Architecture with Top and Bottom
Boot Blocks
„ 256-Word Secured Silicon Sector Region
— Up to 128 factory-locked words
— Up to 128 customer-lockable words
„ Manufactured on 0.11 µm Process Technology
„ Data Retention of 20 years Typical
„ Cycling Endurance of 100,000 Cycles per Sector
Typical
Performance Characteristics
„ WP#/ACC (Write Protect/Acceleration) Input
— At VIL, hardware level protection for the first and last
two 32 Kword sectors.
— At VIH, allows the use of DYB/PPB sector protection
— At VHH, provides accelerated programming in a
factory setting
„ Dual Boot and No Boot Options
„ Low VCC Write Inhibit
Security Features
„ Persistent Sector Protection
— A command sector protection method to lock
combinations of individual sectors to prevent
program or erase operations within that sector
— Sectors can be locked and unlocked in-system at VCC
level
„ Password Sector Protection
— A sophisticated sector protection method locks
combinations of individual sectors to prevent program
or erase operations within that sector using a user
defined 64-bit password
Read Access Times (@ 30 pF, Industrial Temp.)
Random Access Time, ns (tACC)
Page Access Time, ns (tPACC)
Max CE# Access Time, ns (tCE)
Max OE# Access Time, ns (tOE)
65 70
25 30
65 70
25 30
80
30
80
30
Current Consumption (typical values)
8-Word Page Read
Simultaneous Read/Write
Program/Erase
Standby
6 mA
65 mA
25 mA
20 µA
Typical Program & Erase Times (typical values) (See Note)
Typical Word
40 µs
Typical Effective Word (32 words in buffer)
9.4 µs
Accelerated Write Buffer Program
6 µs
Typical Sector Erase Time (32-Kword Sector)
300 ms
Typical Sector Erase Time (128-Kword Sector)
1.6 s
Note: : Typical program and erase times assume the following
conditions: 25°C, 3.0 V VCC, 10,000 cycles; checkerboard data pattern.
Package Options
S29PL-N
VBH064
8.0 x 11.6 mm,
64-ball
VBH084
8.0 x 11.6 mm,
84-ball
LAA064
11 x 13 mm, 64-ball
Fortified BGA
256 „ „
129 „
127 „
„
Publication Number S29PL-N_00 Revision A Amendment 4 Issue Date November 23, 2005










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Номер в каталогеОписаниеПроизводители
S29PL129HMulti-chip Products (MCP)Advanced Micro Devices
Advanced Micro Devices
S29PL129JPage Mode and Simultaneous Read/Write Flash memory deviceCypress Semiconductor
Cypress Semiconductor
S29PL129JSimultaneous-Read/Write Flash MemorySPANSION
SPANSION
S29PL129NPage-Mode Flash MemorySPANSION
SPANSION

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