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NE67483B PDF даташит

Спецификация NE67483B изготовлена ​​​​«CEL» и имеет функцию, называемую «(NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET».

Детали детали

Номер произв NE67483B
Описание (NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET
Производители CEL
логотип CEL логотип 

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NE67483B Даташит, Описание, Даташиты
www.DataSheet4U.com
NEC's L TO Ku BAND LOW NOISE NE67400
AMPLIFIER N-CHANNEL GaAS MESFET NE67483B
FEATURES
• LOW NOISE FIGURE:
NF = 1.4 dB TYP at f = at 12 GHz
• HIGH ASSOCIATED GAIN:
GA = 10 dB TYP at f = 12 GHz
• GATE WIDTH: WG = 280 µm
• GATE LENGTH: LG = 0.3 µm
DESCRIPTION
NEC's NE674 is a L to Ku Band low noise GaAs MESFET. This
device features a low noise figure with high associated gain,
employing a recessed 0.3 micron gate and triple epitaxial
technology. The active area of the chip is covered with SiD2
and Si3N4 for scratch protection and surface stability. This
device is suitable for both amplifier and oscillator applications.
This device is housed in a solder sealed hermetic, metal
ceramic package for high reliability in space applications.
NOISE FIGURE, ASSOCIATED GAIN
vs. FREQUENCY
VDS = 3 V
ID = 10 mA
24
20
3.0
GA
2.0
16
12
1.0
0
1
8
NF
4
2 4 6 8 10 14 20 30
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
NF Noise Figure at VDS = 3 V, ID = 10 mA, f = 4 GHz
f = 12 GHz
UNITS
dB
dB
NE67400
NE67483B
MIN TYP MAX
0.6
1.4 1.6
GA Associated Gain at VDS = 3 V ID = 10 mA, f = 4 GHz
f = 12 GHz
dB
dB 8.5
14.0
10.0
P1dB
Output Power at 1 dB Gain Compression Point, f = 12 GHz,
VDS = 3 V, IDS = 30 mA
dBm
14.5
IDSS Saturated Drain Current at VDS = 3 V, VGS = 0 V
mA 20
40 120
VGS(OFF) Gate to Source Cut Off Voltage at VDS = 3 V, ID = 100 µA
V -0.5
-1.1 -3.5
gm Transconductance at VDS = 3 V, ID = 10 mA
mS 20
50 100
IGSO
Gate to Source Leakage Current at VGS = -5 V
µA
1.0 10
RTH (CH-C) Thermal Resistance (Channel-to-Case)
NE67400
NE67483B
°C/W
°C/W
190
450
California Eastern Laboratories









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NE67483B Даташит, Описание, Даташиты
NE67400, NE67483B
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDS Drain to Source Voltage
V
5.0
VGD Gate to Drain Voltage
V –6.0
IDS Drain Current
mA IDSS
TCH Channel Temperature °C 175
TSTG
Storage Temperature
°C -65 to +175
PT Total Power Dissipation
NE67483B
mW
NE67400
mW
270
400
Note:
1. Operation in excess of any one of these conditions may result in
permanent damage.
RECOMMENDED OPERATING
CONDITIONS (TA = 25°C)
SYMBOLS PARAMETERS
UNITS MIN TYP MAX
VDS Drain to Source Voltage V
34
ID
Drain Current
mA
10 30
PIN
Input Power
dBm
15
TYPICAL NOISE PARAMETERS (TA = 25°C)
VDS = 3 V, IDS = 10 mA (NE67483B)
FREQ.
(GHz)
NFOPT
(dB)
GA
(dB)
ΓOPT
MAG ANG
Rn/50
2 0.55 17.0 0.81 37 0.57
3 0.58 15.2 0.75 53 0.51
4 0.60 14.0 0.70 69 0.44
5 0.68 13.2 0.67 83 0.37
6 0.76 12.6 0.65 97 0.31
7 0.85 12.0 0.64 111 0.25
8 0.93 11.5 0.64 123 0.19
9 1.03 11.0 0.64 136 0.14
10 1.15 10.7 0.64 148 0.10
11 1.26 10.3 0.64 161 0.06
12 1.40 10.0 0.63 173 0.05
13 1.55 9.6 0.62 -173 0.05
14 1.70 9.2 0.60 -159 0.08
15 1.84 9.0 0.57 -145 0.15
16 2.04 8.6 0.53 -129 0.23
17 2.18 8.3 0.46 -113 0.34
18 2.35 8.0 0.38 -95 0.44
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
400
300
200
100
0 50 100 150 200
Ambient Temperature, TA (°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 0 V
40
-0.2 V
30
20 -0.4 V
10 -0.6 V
0 1 23 4 5
Drain to Source Voltage, VDS (V)









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NE67483B Даташит, Описание, Даташиты
TYPICAL PERFORMANCE CURVES (TA = 25°C)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
50
VDS = 3 V
40
30
20
10
0
-2.0
-1.0
Gate to Source Voltage, VGS (V)
0
NE67400, NE67483B
TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C)
VDS = 3 V, ID = 10 mA
Start 500 MHz,
Stop 18 GHZ,
Step 500 MHz
0.5
S11
1.0
5
0
4
Marker
1 : 2 GHz
2 : 4 GHz
3 : 8 GHz
4 : 12 GHz
5 : 16 GHz
3
-0.5
2
-1.0
NE67483B
S22
1.0
2.0 0.5 2.0
0
1
-2.0
5
0
0
4
-0.5
3
-1.0
1
2
-2.0










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Номер в каталогеОписаниеПроизводители
NE67483B(NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFETCEL
CEL

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