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PDF HMC581LP6 Data sheet ( Hoja de datos )
| Número de pieza | HMC581LP6 | |
| Descripción | High IP3 RFIC Dual Downconverter | |
| Fabricantes | Hittite Microwave | |
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v00.0806
HMC581LP6 / 581LP6E
HIGH IP3 RFIC DUAL
DOWNCONVERTER, 800 - 960 MHz
Typical Applications
Features
The HMC581LP6 / HMC581LP6E is ideal for Wireless
+26 dBm Input IP3
Infrastructure Applications:
Low Single Input LO Drive: 0 dBm
• GSM, GPRS & EDGE
9 dB Conversion Gain
• CDMA & W-CDMA
13 dB Noise Figure
8 • Cellular / 3G Infrastructure
Single Positive Supply: +5V @ 260 mA
Functional Diagram
General Description
The HMC581LP6 & HMC581LP6E are high linear-
ity Dual Down Converter Receiver ICs that operate
from 800 - 960 MHz and deliver a +26 dBm input third
order intercept point for UMTS & GSM applications.
The passive mixer outputs and high dynamic range IF
amplifier inputs are positioned so that an external IF
filter can be placed in series between them. The con-
verter provides a gain of 9 dB and typical single side
band noise figure of 13 dB. The IC operates from a
single +5V supply consuming 260 mA of current while
requiring only 0 dBm LO drive. The design requires no
external baluns, no external matching and supports IF
frequencies between 50 and 300 MHz.
Electrical Specifications, TA = +25° C, LO = 0 dBm, Vdd = +5V, IF = 105 MHz*
Parameter
Frequency Range, RF
Frequency Range, LO
Frequency Range, IF
Conversion Gain
Noise Figure (SSB)
LO to RF Isolation
LO to IF Isolation
RF to IF Isolation
IP3 (Input)
1 dB Compression (Input)
Branch Isolation
LO Drive Input Level (Typical)
Supply Current (Idd for LO & IF)
(IF bias resistor= 4.7 Ohms)
* Unless otherwise noted all measurements with low side LO & IF = 105 MHz.
Min.
7
23
Typ.
800 - 960
700 - 1160
50 - 300
9
13
4
10
15
26
9.5
40
-4 to +4
256
Max.
Units
MHz
MHz
MHz
dB
dB
dB
dB
dB
dBm
dBm
dB
dBm
mA
8 - 492
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
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v00.0806
8
Absolute Maximum Ratings
RF / IF Input (Vdd= +5V)
LO Drive (Vdd= +5V)
Vdd (LO or IF)
Channel Temperature
Continuous Pdiss (T = 85°C)
(derate 25.5 mW/°C above 85°C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+13 dBm
+15 dBm
+7 Vdc
150°C
1.64 W
39.6 °C/W
-65 to +150°C
-40 to +85°C
Outline Drawing
HMC581LP6 / 581LP6E
HIGH IP3 RFIC DUAL
DOWNCONVERTER, 800 - 960 MHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
8 - 496
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number
HMC581LP6
Package Body Material
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC581LP6E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
MSL Rating
MSL1 [1]
MSL1 [2]
Package Marking [3]
H581
XXXX
H581
XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC581LP6.PDF ] | |
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