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HMN5128DV PDF даташит

Спецификация HMN5128DV изготовлена ​​​​«Hanbit Electronics» и имеет функцию, называемую «Non-Volatile SRAM MODULE 4Mbit».

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Номер произв HMN5128DV
Описание Non-Volatile SRAM MODULE 4Mbit
Производители Hanbit Electronics
логотип Hanbit Electronics логотип 

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HMN5128DV Даташит, Описание, Даташиты
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HANBit
HMN5128DV
Non-Volatile SRAM MODULE 4Mbit (512K x 8-Bit),32Pin-DIP, 3.3V
Part No. HMN5128DV
GENERAL DESCRIPTION
The HMN5128DV Nonvolatile SRAM is a 4,194,304-bit static RAM organized as 524,288 bytes by 8 bits.
The HMN5128DV has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write
cycles of standard SRAM and integral control circuitry which constantly monitors the single 3.3V supply for an out-of-
tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the
memory until after Vcc returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the
SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is
switched on to sustain the memory until after VCC returns valid.
The HMN5128DV uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide
non-volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.
FEATURES
w Access time : 70, 85, 120, 150ns
w High-density design : 4Mbit Design
w Battery internally isolated until power is applied
w Industry-standard 32-pin 512K x 8 pinout
w Unlimited write cycles
w Data retention in the absence of VCC
w 10-years minimum data retention in absence of power
w Automatic write-protection during power-up/power-down
cycles
w Data is automatically protected during power loss
w Conventional SRAM operation; unlimited write cycles
OPTIONS
w Timing
70 ns
85 ns
120 ns
150 ns
MARKING
-70
-85
-120
-150
PIN ASSIGNMENT
A18 1
A16 2
A14 3
A12 4
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
DQ0 13
DQ1 14
DQ2 15
VSS 16
32 VCC
31 A15
30 A17
29 /WE
28 A13
27 A8
26 A9
25 A11
24 /OE
23 A10
22 /CE
21 DQ7
20 DQ6
19 DQ5
18 DQ4
17 DQ3
32-pin Encapsulated Package
URL:www.hbe.co.kr
Rev.0.0 (FEBRUARY/ 2002)
1 HANBit Electronics Co.,Ltd.









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HMN5128DV Даташит, Описание, Даташиты
HANBit
HMN5128DV
FUNCTIONAL DESCRIPTION
The HMN5128DV executes a read cycle whenever /WE is inactive(high) and /CE is active(low). The address specified by
the address inputs(A0-A18) defines which of the 524,288 bytes of data is accessed. Valid data will be available to the eight
data output drivers within tACC (access time) after the last address input signal is stable.
When power is valid, the HMN5128DV operates as a standard CMOS SRAM. During power-down and power-up cycles,
the HMN5128DV acts as a nonvolatile memory, automatically protecting and preserving the memory contents.
The HMN5128DV is in the write mode whenever the /WE and /CE signals are in the active (low) state after address inputs
are stable. The later occurring falling edge of /CE or /WE will determine the start of the write cycle. The write cycle is
terminated by the earlier rising edge of /CE or /WE. All address inputs must be kept valid throughout the write cycle. /WE
must return to the high state for a minimum recovery time (tWR) before another cycle can be initiated. The /OE control
signal should be kept inactive (high) during write cycles to avoid bus contention. However, if the output bus been enabled
(/CE and /OE active) then /WE will disable the outputs in tODW from its falling edge.
The HMN5128DV provides full functional capability for Vcc greater than 3.0 V and write protects by 2.8 V nominal. Power-
down/power-up control circuitry constantly monitors the Vcc supply for a power-fail-detect threshold VPFD. When VCC falls
below the VPFD threshold, the SRAM automatically write-protects the data. All inputs to the RAM become dont careand
all outputs are high impedance. As Vcc falls below approximately 2.5 V, the power switching circuit connects the lithium
energy soure to RAM to retain data. During power-up, when Vcc rises above approximately 2.5 volts, the power switching
circuit connects external Vcc to the RAM and disconnects the lithium energy source. Normal RAM operation can resume
after Vcc exceeds 3.0 volts.
BLOCK DIAGRAM
/OE
512K x 8
A0-A18
/WE
SRAM
Block
DQ0-DQ7
Power
/CE CON
/CE
Power Fail
VCC
Control
Lithium
Cell
PIN DESCRIPTION
A0-A18 : Address Input
/CE : Chip Enable
Vss : Ground
DQ0-DQ7 : Data In / Data Out
/WE : Write Enable
/OE : Output Enable
NVCCC: :NPooCwoenr n(+e3c.t3ioVn)
URL:www.hbe.co.kr
Rev.0.0 (FEBRUARY/ 2002)
2 HANBit Electronics Co.,Ltd.









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HMN5128DV Даташит, Описание, Даташиты
HANBit
HMN5128DV
TRUTH TABLE
MODE
Not selected
Output disable
Read
Write
/OE /CE /WE I/O OPERATION
XHX
High Z
HLH
High Z
LLH
XL L
DOUT
DIN
POWER
Standby
Active
Active
Active
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
CONDITIONS
DC voltage applied on VCC relative to VSS
DC Voltage applied on any pin excluding VCC
relative to VSS
Operating temperature
VCC
VT
TOPR
-0.5V to Vcc+0.5
-0.3V to 4.6V
0 to 70°C
VTVCC+0.3
Storage temperature
TSTG
-65°C to 150°C
Soldering temperature
TSOLDER
260°C
For 10 second
NOTE: Permanent device damage may occur if Absolute Maximum Ratings are exceeded.
Functional operation should be restricted to the Recommended DC Operating Conditions detailed in this data sheet.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS ( TA= TOPR )
PARAMETER
SYMBOL
MIN
TYPICAL
Supply Voltage
VCC 3.0V
3.3V
Ground
VSS 0
Input high voltage VIH 2.2
0
-
Input low voltage
VIL -0.3
-
NOTE: Typical values indicate operation at TA = 25
MAX
3.6V
0
Vcc+0.3V
0.6V
CAPACITANCE (TA=25, f=1MHz, VCC=5.0V)
DESCRIPTION
CONDITIONS
Input Capacitance
Input voltage = 0V
Input/Output Capacitance
Output voltage = 0V
1. Only sampled, not 100% tested
SYMBOL
CIN
CI/O
MAX
8
10
MIN UNIT
- pF
- pF
URL:www.hbe.co.kr
Rev.0.0 (FEBRUARY/ 2002)
3 HANBit Electronics Co.,Ltd.










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Номер в каталогеОписаниеПроизводители
HMN5128DNon-Volatile SRAM MODULE 4MbitHanbit Electronics
Hanbit Electronics
HMN5128DVNon-Volatile SRAM MODULE 4MbitHanbit Electronics
Hanbit Electronics

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