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Número de pieza | HMNP16MM | |
Descripción | Non-Volatile SRAM MODULE 16Mbyte | |
Fabricantes | Hanbit Electronics | |
Logotipo | ||
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HANBit
HMNP16MM
Non-Volatile SRAM MODULE 16Mbyte (4,096K x 32Bit), PCI interface, (SMM) 5V
Part No. HMNP16MM
GENERAL DESCRIPTION
The HMNP16MM Nonvolatile SRAM is a 16,777,216-byte static RAM organized as 8,388,608 words by 16 bits.
The HMNP16MM has a self-contained lithium energy source provide reliable non-volatility coupled with the
unlimited write cycles of standard SRAM and integral control circuitry which constantly monitors the single 5V
supply for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is
automatically switched on to sustain the memory until after VCC returns valid and write protection is
unconditionally enabled to prevent garbled data.
In addition the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time
the integral energy source is switched on to sustain the memory until after VCC returns valid.
The HMNP16MM uses extremely low standby current CMOS SRAM’s, coupled with small lithium coin cells to
provide non-volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.
FEATURES
w Access time : 70, 85 and 100ns
w High-density design : 16Mbyte Design
w Battery internally isolated until power is applied
w Unlimited write cycles
w Data retention in the absence of VCC
w 10-years minimum data retention in absence of power
w Automatic write-protection during power-up/power-down cycles
w Data is automatically protected during power loss
w Industrial temperature operation
OPTIONS
w Timing
70 ns
85 ns
100 ns
MARKING
- 70
- 85
-100
URL : www.hbe.co.kr
Rev. 0.0 (April, 2002)
1 HANBit Electronics Co.,Ltd
1 page HANBit
TRUTH TABLE
HMNP16MM
MODE
Not selected
Output disable
Read
Write
/OE
/CE
/WE I/O OPERATION
POWER
XHX
High Z
Standby
HLH
High Z
Active
LLH
XL L
DOUT
DIN
Active
Active
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
SYMBOL
Vin,VCC
Vcc
RATING
-0.5 to 7.0
-0.5 to 7.0
UNIT
V
V
REMARK
Power Dissipation
Pd 32
W
Storage temperature
Operating Temperature
TSTG
Ta
-65 to 150
0 to 70
-40 to 85
°C
°C K6T4016C3C-B
°C K6T4016C3C-F
NOTE: Permanent device damage may occur if Absolute Maximum Ratings are exceeded.
Functional operation should be restricted to the Recommended DC Operating Conditions detailed in this
data sheet.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS ( TA= TOPR )
PARAMETER
Supply Voltage
SYMBOL
VCC
MIN
4.5V
Ground
VSS 0
Input high voltage
Input low voltage
VIH 2.2
VIL -0.5
NOTE: Typical values indicate operation at TA = 25℃
TYPICAL
5.0V
0
-
-
MAX
5.5V
0
VCC+0.5V
0.8V
URL : www.hbe.co.kr
Rev. 0.0 (April, 2002)
5 HANBit Electronics Co.,Ltd
5 Page HANBit
PACKAGE DIMENSION
HMNP16MM
<FRONT VIEW>
<REAR VIWE>
URL : www.hbe.co.kr
Rev. 0.0 (April, 2002)
11 HANBit Electronics Co.,Ltd
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet HMNP16MM.PDF ] |
Número de pieza | Descripción | Fabricantes |
HMNP16MM | Non-Volatile SRAM MODULE 16Mbyte | Hanbit Electronics |
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