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HMN1M8DN PDF даташит

Спецификация HMN1M8DN изготовлена ​​​​«Hanbit Electronics» и имеет функцию, называемую «Non-Volatile SRAM MODULE 8Mbit».

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Номер произв HMN1M8DN
Описание Non-Volatile SRAM MODULE 8Mbit
Производители Hanbit Electronics
логотип Hanbit Electronics логотип 

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HMN1M8DN Даташит, Описание, Даташиты
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HANBit
HMN1M8DN
Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 40Pin-DIP, 5V
Part No. HMN1M8DN
GENERAL DESCRIPTION
The HMN1M8DN Nonvolatile SRAM is a 8,388,608-bit static RAM organized as 1,048,576 bytes by 8 bits.
The HMN1M8DN has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write
cycles of standard SRAM and integral control circuitry which constantly monitors the single 5V supply for an out-of-
tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the
memory until after VCC returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the
SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is
switched on to sustain the memory until after VCC returns valid.
The HMN1M8DN uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide non-
volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.
FEATURES
w Access time : 70, 85, 120, 150ns
w High-density design : 8Mbit Design
w Battery internally isolated until power is applied
w Industry-standard 40-pin 1,024K x 8 pinout
w Unlimited write cycles
w Data retention in the absence of VCC
w 10-years minimum data retention in absence of power
w Automatic write-protection during power-up/power-down
cycles
w Data is automatically protected during power loss
OPTIONS
w Timing
70 ns
85 ns
120 ns
150 ns
MARKING
- 70
- 85
-120
-150
PIN ASSIGNMENT
NC 1
NC 2
NC 3
A18 4
A16 5
A14 6
A12 7
A7 8
A6 9
A5 10
A4 11
A3 12
A2 13
A1 14
A0 15
DQ0 16
DQ1 17
DQ2 18
VSS 19
NC 20
40 NC
39 VCC
38 A19
37 NC
36 A15
35 A17
34 /WE
33 A13
32 A8
31 A9
30 A11
29 /OE
28 A10
27 /CE
26 DQ7
25 DQ6
24 DQ5
23 DQ4
22 DQ3
21 NC
40-pin Encapsulated Package
URL : www.hbe.co.kr
REV. 0.2 (August, 2002)
1 HANBit Electronics Co.,Ltd.









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HMN1M8DN Даташит, Описание, Даташиты
HANBit
HMN1M8DN
FUNCTIONAL DESCRIPTION
The HMN1M8DN executes a read cycle whenever /WE is inactive(high) and /CE is active(low). The address specified by
the address inputs(A0-A19) defines which of the 1,048,576 bytes of data is accessed. Valid data will be available to the
eight data output drivers within tACC (access time) after the last address input signal is stable.
When power is valid, the HMN1M8DN operates as a standard CMOS SRAM. During power-down and power-up cycles,
the HMN1M8DN acts as a nonvolatile memory, automatically protecting and preserving the memory contents.
The HMN1M8DN is in the write mode whenever the /WE and /CE signals are in the active (low) state after address inputs
are stable. The later occurring falling edge of /CE or /WE will determine the start of the write cycle. The write cycle is
terminated by the earlier rising edge of /CE or /WE. All address inputs must be kept valid throughout the write cycle. /WE
must return to the high state for a minimum recovery time (tWR) before another cycle can be initiated. The /OE control
signal should be kept inactive (high) during write cycles to avoid bus contention. However, if the output bus been enabled
(/CE and /OE active) then /WE will disable the outputs in tODW from its falling edge.
The HMN1M8DN provides full functional capability for Vcc greater than 4.5 V and write protects by 4.37 V nominal. Power-
down/power-up control circuitry constantly monitors the Vcc supply for a power-fail-detect threshold VPFD. When VCC falls
below the VPFD threshold, the SRAM automatically write-protects the data. All inputs to the RAM become dont careand
all outputs are high impedance. As Vcc falls below approximately 3 V, the power switching circuit connects the lithium
energy soure to RAM to retain data. During power-up, when Vcc rises above approximately 3.0 volts, the power switching
circuit connects external Vcc to the RAM and disconnects the lithium energy source. Normal RAM operation can resume
after Vcc exceeds 4.5 volts.
BLOCK DIAGRAM
/OE
/WE
/CE
A19
2 x 512K x 8
SRAM
Block
A0-A18
DQ0-DQ7
Power
/CE CON
Power Fail
Control
VCC
Lithium
Cell
PIN DESCRIPTION
A0-A19 : Address Input
/CE : Chip Enable
VSS : Ground
DQ0-DQ7 : Data In / Data Out
/WE : Write Enable
/OE : Output Enable
VCC: Power (+5V)
NC : No Connection
URL : www.hbe.co.kr
REV. 0.2 (August, 2002)
2 HANBit Electronics Co.,Ltd.









No Preview Available !

HMN1M8DN Даташит, Описание, Даташиты
HANBit
HMN1M8DN
TRUTH TABLE
MODE
/OE
/CE
/WE I/O OPERATION
POWER
Not selected
X
H
X
High Z
Standby
Output disable
H
L
H
High Z
Active
Read
Write
LLH
XL L
DOUT
DIN
Active
Active
ABSOLUTE MAXIMUM RATINGS
PARAMETER
DC voltage applied on VCC relative to VSS
DC Voltage applied on any pin excluding VCC relative to
VSS
SYMBOL
VCC
VT
Operating temperature
TOPR
Storage temperature
TSTG
Temperature under bias
TBIAS
RATING
-0.3V to 7.0V
-0.3V to 7.0V
0 to 70°C
-40 to 85°C
-40°C to 70°C
-40 to 85°C
-10°C to 70°C
-10°C to 85°C
CONDITIONS
VTVCC+0.3
Commercial Temp.
Industrial Temp.
Commercial Temp.
Industrial Temp.
Commercial Temp.
Industrial Temp.
Soldering temperature
TSOLDER
260°C
For 10 second
NOTE: Permanent device damage may occur if Absolute Maximum Ratings are exceeded.
Functional operation should be restricted to the Recommended DC Operating Conditions detailed in this data sheet.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS ( TA= TOPR )
PARAMETER
SYMBOL
MIN
TYPICAL
Supply Voltage
Ground
Input high voltage
VCC
VSS
VIH
4.5V
0
2.2
5.0V
0
-
Input low voltage
VIL
-0.3
-
NOTE: Typical values indicate operation at TA = 25
MAX
5.5V
0
VCC+0.3V
0.8V
URL : www.hbe.co.kr
REV. 0.2 (August, 2002)
3 HANBit Electronics Co.,Ltd.










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