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HMN28D PDF даташит

Спецификация HMN28D изготовлена ​​​​«Hanbit Electronics» и имеет функцию, называемую «Non-Volatile SRAM MODULE 16Kbit».

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Номер произв HMN28D
Описание Non-Volatile SRAM MODULE 16Kbit
Производители Hanbit Electronics
логотип Hanbit Electronics логотип 

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HMN28D Даташит, Описание, Даташиты
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HANBit
HMN28D
Non-Volatile SRAM MODULE 16Kbit (2K x 8-Bit), 24pin DIP, 5V
Part No. HMN28D
GENERAL DESCRIPTION
The HMN28D are 16,384-bit, fully static, nonvolatile SRAMs organized as 2,048 bytes by 8 bits. Each NVSRAM has a
self-contained lithium energy source and control circuitry, which constantly monitors Vcc for an out-of-tolerance condition.
When such a condition occurs, the lithium energy source is automatically switched on and writes protection is
unconditionally enabled to prevent data corruption. The HMN28D devices can be used in place of existing 2K x 8 SRAMs
directly conforming to the popular byte wide 24-pin DIP standard. There is no limit on the number of write cycles that can
be executed and no additional support circuitry is required for microprocessor interfacing.
The HMN28D uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide non-
volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.
FEATURES
w Access time : 70, 85, 120 and 150ns
w High-density design : 2KByte Design
w Battery internally isolated until power is applied
w JEDEC standard 24-pin DIP Package
w Low-power CMOS
w Unlimited writes cycles
w Data retention in the absence of VCC
w 10-years minimum data retention in absence of power
w Automatic write-protection during power-up/power-down
cycles
w Data is automatically protected during power loss
w Conventional SRAM operation; unlimited write cycles
OPTIONS
w Timing
70 ns
85 ns
120 ns
150 ns
MARKING
-70
-85
-120
-150
PIN ASSIGNMENT
A7 1
A6 2
A5 3
A4 4
A3 5
A2 6
A1 7
A0 8
DQ0 9
DQ1 10
DQ2 11
Vss 12
24 Vcc
23 A8
22 A9
21 /WE
20 /OE
19 A10
18 /CE
17 DQ7
16 DQ6
15 DQ5
14 DQ4
13 DQ3
24-pin Encapsulated package
URL : www.hbe.co.kr
Rev. 0.0 (April, 2002)
1 HANBit Electronics Co.,Ltd









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HMN28D Даташит, Описание, Даташиты
HANBit
HMN28D
FUNCTIONAL DESCRIPTION
The HMN28D executes a read cycle whenever /WE is inactive(high) and /CE is active(low). The address specified by the
address inputs(A0-A10) defines which of the 2,048 bytes of data is accessed. Valid data will be available to the eight data
output drivers within tACC (access time) after the last address input signal is stable.
When power is valid, the HMN28D operates as a standard CMOS SRAM. During power-down and power-up cycles, the
HMN28D acts as a nonvolatile memory, automatically protecting and preserving the memory contents.
The HMN28D is in the write mode whenever the /WE and /CE signals are in the active (low) state after address inputs are
stable. The later occurring falling edge of /CE or /WE will determine the start of the write cycle. The write cycle is
terminated by the earlier rising edge of /CE or /WE. All address inputs must be kept valid throughout the write cycle. /WE
must return to the high state for a minimum recovery time (tWR) before another cycle can be initiated. The /OE control
signal should be kept inactive (high) during write cycles to avoid bus contention. However, if the output bus been enabled
(/CE and /OE active) then /WE will disable the outputs in tODW from its falling edge.
The HMN28D provides full functional capability for VCC greater than 4.5 V and write protects by 4.37 V nominal. Power-
down/power-up control circuitry constantly monitors the VCC supply for a power-fail-detect threshold VPFD . When VCC falls
below the VPFD threshold, the SRAM automatically write-protects the data. All inputs to the RAM become dont careand
all outputs are high impedance. As VCC falls below approximately 3 V, the power switching circuit connects the lithium
energy soure to RAM to retain data. During power-up, when VCC rises above approximately 3.0 volts, the power switching
circuit connects external VCC to the RAM and disconnects the lithium energy source. Normal RAM operation can resume
after VCC exceeds 4.5 volts.
BLOCK DIAGRAM
/OE
2K x 8
A0-A10
/WE
SRAM
Block
DQ0-DQ7
Power
/CE CON
/CE
Power Fail
VCC
Control
Lithium
Cell
PIN DESCRIPTION
A0-A10 : Address Input
/CE : Chip Enable
VSS : Ground
DQ0-DQ7 : Data In / Data Out
/WE : Write Enable
/OE : Output Enable
VCC: Power (+5V)
NC : No Connection
URL : www.hbe.co.kr
Rev. 0.0 (April, 2002)
2 HANBit Electronics Co.,Ltd









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HMN28D Даташит, Описание, Даташиты
HANBit
TRUTH TABLE
MODE
/OE /CE /WE I/O OPERATION
Not selected
X
H
X
Output disable
H
L
H
Read
LLH
Write
XL L
High Z
High Z
DOUT
DIN
HMN28D
POWER
Standby
Active
Active
Active
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
CONDITIONS
DC voltage applied on VCC relative to VSS
DC Voltage applied on any pin excluding VCC
relative to VSS
Operating temperature
Storage temperature
VCC
VT
TOPR
TSTG
-0.3V to 7.0V
-0.3V to 7.0V
0 to 70°C
-40°C to 70°C
VTVCC+0.3
Temperature under bias
TBIAS
-10°C to 70°C
Soldering temperature
TSOLDER
260°C
For 10 second
NOTE: Permanent device damage may occur if Absolute Maximum Ratings are exceeded.
Functional operation should be restricted to the Recommended DC Operating Conditions detailed in this data sheet.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS ( TA= TOPR )
PARAMETER
SYMBOL
MIN TYPICAL
Supply Voltage
Ground
Input high voltage
VCC
VSS
VIH
4.5V
0
2.2
5.0V
0
-
Input low voltage
VIL
-0.3 -
NOTE: Typical values indicate operation at TA = 25
MAX
5.5V
0
VCC+0.3V
0.8V
URL : www.hbe.co.kr
Rev. 0.0 (April, 2002)
3 HANBit Electronics Co.,Ltd










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Номер в каталогеОписаниеПроизводители
HMN28DNon-Volatile SRAM MODULE 16KbitHanbit Electronics
Hanbit Electronics

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