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PDF NTLTD7900ZR2 Data sheet ( Hoja de datos )
| Número de pieza | NTLTD7900ZR2 | |
| Descripción | N-Channel Micro-8 Leadless | |
| Fabricantes | ON Semiconductor | |
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NTLTD7900ZR2
Power MOSFET
9 A, 20 V, Logic Level, N−Channel
Micro−8 Leadless
EZFETs™ are an advanced series of Power MOSFETs which
contain monolithic back−to−back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature ultra low RDS(on) and true
logic level performance. EZFET devices are designed for use in low
voltage, high speed switching applications where power efficiency is
important. Typical applications are dc−dc converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones.
Applications
• Zener Protected Gates Provide Electrostatic Discharge Protection
• Designed to Withstand 4000 V Human Body Model
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
• Logic Level Gate Drive − Can be Driven by Logic ICs
• Micro−8 Leadless Surface Mount Package − Saves Board Space
• IDSS Specified at Elevated Temperature
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Steady
Rating
Symbol 10 Secs State
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
TA = 25°C
TA = 85°C
Pulsed Drain Current
(tp v 10 ms)
VDSS
VGS
ID
IDM
20
±12
9.0 6.0
6.4 4.3
30
V
V
A
A
Continuous Source−Diode
Conduction (Note 1)
Is 2.9 1.4 A
Total Power Dissipation (Note 1)
TA = 25°C
TA = 85°C
Operating Junction and Storage
Temperature Range
PD
TJ, Tstg
3.2 1.5
1.7 0.79
−55 to 150
W
°C
Thermal Resistance (Note 1)
Junction−to−Ambient
RqJA
38
82 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to 1″ x 1″ FR−4 board.
http://onsemi.com
9 AMPERES
20 VOLTS
RDS(on) = 26 mW
(VGS = 4.5 V, ID = 6.5 A)
RDS(on) = 31 mW
(VGS = 2.5 V, ID = 5.8 A)
D
D
2.4 kW
G1
2.4 kW
G2
N−Channel
S1 S2
N−Channel
MARKING DIAGRAM
1
Micro−8 Leadless
CASE 846C
1
7900
AYWW
A = Assembly Location
Y = Year
WW = Work Week
PIN ASSIGNMENT
Drain 8
Drain 7
Drain 6
Drain 5
Drain
1 Source 1
2 Gate 1
3 Source 2
4 Gate 2
(Bottom View)
ORDERING INFORMATION
Device
Package
Shipping†
NTLTD7900ZR2 Micro−8 LL 2500 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 4
1
Publication Order Number:
NTLTD7900ZR2/D
1 page  
NTLTD7900ZR2
5
TJ = 25°C
ID = 6.5 A
4
3
2
1
0
0 2 4 6 8 10 12
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Gate−to−Source
10,000
tf
1000
td(off)
tr
td(on)
VDS = 10 V
ID = 6.5 A
VGS = 4.5 V
100
14 1
10
RG, GATE RESISTANCE (W)
100
Figure 8. Resistive Switching Time Variation
versus Gate Resistance
10
TJ = 25°C
VGS = 0 V
1
TJ = 150°C
TJ = 25°C
0.1
0
0.2 0.4 0.6 0.8
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
1
Figure 9. Diode Forward Voltage versus Current
1.8
ID = 9 A
VGS = 4.5 V
1.6
1.4
1.2
1.0
−0.8
0.6
−50 −25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. On−Resistance Variation with
Temperature
150
0.2
ID = 250 mA
0.1
0
−0.1
−0.2
−0.3
−0.4
−50 −25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
150
Figure 11. Threshold Voltage
0.040
0.035
0.030
TJ = 125°C
0.025
0.020
0.015
TJ = 25°C
TJ = −55°C
0.010
0.005
0
0 5 10 15 20 25
ID, DRAIN CURRENT (A)
Figure 12. On−Resistance versus Drain
Current and Temperature
30
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5
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