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PDF NTTD4401F Data sheet ( Hoja de datos )
| Número de pieza | NTTD4401F | |
| Descripción | FETKY Power MOSFET and Schottky Diode | |
| Fabricantes | ON Semiconductor | |
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NTTD4401F
FETKYtPower MOSFET
and Schottky Diode
−20 V, −3.3 A P−Channel with 20 V,
1.0 A Schottky Diode, Micro8t Package
The FETKY product family incorporates low RDS(on), true logic
level MOSFETs packaged with industry leading, low forward drop, low
leakage Schottky Barrier Diodes to offer high efficiency components in
a space saving configuration. Independent pinouts for TMOS and
Schottky die allow the flexibility to use a single component for
switching and rectification functions in a wide variety of applications.
Features
• Low VF and Low Leakage Schottky Diode
• Lower Component Placement and Inventory Costs along with Board
Space Savings
• Logic Level Gate Drive – Can be Driven by Logic ICs
Applications
• Buck Converter
• Synchronous Rectification
• Low Voltage Motor Control
• Load Management in Battery Packs, Chargers, Cell Phones, and
other Portable Products
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation Steady
(Note 1)
State
TA = 25°C
TA = 100°C
TA = 25°C
VDSS
VGS
ID
PD
−20
−10
3.3
2.1
1.42
V
V
A
W
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
ID
PD
2.4 A
1.5
0.78 W
Pulsed Drain
Current
t = 10 ms
IDM 10 A
Operating Junction and Storage
Temperature
TJ, TSTG −55 to 150 °C
Single Pulse Drain−to−Source
Avalanche Energy
Starting TA = 25°C (t v 10 s)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
EAS
TL
150 mJ
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 inch sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.172 in sq).
http://onsemi.com
MOSFET PRODUCT SUMMARY
V(BR)DSS
−20 V
RDS(on) Typ
70 mW @ −4.5 V
100 mW @ −2.7 V
ID Max
−3.3 A
−2.7 A
SCHOTTKY DIODE SUMMARY
VR Max
IF Max
VF Max
20 V
2.0 A
600 mV @ IF = 2.0 A
SA
G
D
P−Channel MOSFET
C
SCHOTTKY DIODE
8
1
Micro8
CASE 846A
MARKING DIAGRAM
& PIN CONNECTIONS
ANODE 1
ANODE 2
SOURCE 3
GATE 4
YWW
BG
8 CATHODE
7 CATHODE
6 DRAIN
5 DRAIN
(Top View)
Y = Year
WW = Work Week
BG = Device Code
ORDERING INFORMATION
Device
Package
Shipping†
NTTD4401FR2 Micro8 4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 3
1
Publication Order Number:
NTTD4401F/D
1 page  
NTTD4401F
TYPICAL ELECTRICAL CHARACTERISTICS
1500
1200
VDS = 0 V
Ciss
900
Crss
600
VGS = 0 V
TJ = 25°C
Ciss
5
4
3
Q1
2
QT
Q2
VGS
20
18
16
14
12
10
8
300
0
10
5 05
−VGS −VDS
Coss
Crss
10 15
1
0
20 0
6
VDS
ID = −3.3 A
TJ = 25°C
4
2
0
2 4 6 8 10 12 14
Qg, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
VDD = −10 V
ID = −1.2 A
VGS = −2.7 V
100 td (off)
tr tf
100
tr
td (off)
tf
10
1.0
td (on)
10
100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
td (on)
10
VDD = −10 V
ID = −3.3 A
VGS = −4.5 V
1.0
1.0
10
100
RG, GATE RESISTANCE (W)
Figure 10. Resistive Switching Time Variation
vs. Gate Resistance
2
VGS = 0 V
1.6 TJ = 25°C
1.2
0.8
0.4
0
0.4 0.5 0.6 0.7 0.8 0.9
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 11. Diode Forward Voltage
vs. Current
1
IS
tp
di/dt
trr
ta tb
0.25 IS
IS
TIME
Figure 12. Diode Reverse Recovery Waveform
http://onsemi.com
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