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NLAST9431 PDF даташит

Спецификация NLAST9431 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Low Voltage Single Supply Dual DPDT Analog Switch».

Детали детали

Номер произв NLAST9431
Описание Low Voltage Single Supply Dual DPDT Analog Switch
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NLAST9431 Даташит, Описание, Даташиты
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NLAST9431
Low Voltage Single Supply
Dual DPDT Analog Switch
The NLAST9431 is an advanced CMOS dual−independent DPDT
(double pole−double throw) analog switch, fabricated with silicon
gate CMOS technology. It achieves high−speed propagation delays
and low ON resistances while maintaining CMOS low−power
dissipation. This DPDT controls analog and digital voltages that may
vary across the full power−supply range (from VCC to GND).
The device has been designed so the ON resistance (RON) is much
lower and more linear over input voltage than RON of typical CMOS
analog switches.
The channel−select input structure provides protection when
voltages between 0 V and 5.5 V are applied, regardless of the supply
voltage. This input structure helps prevent device destruction caused
by supply voltage − input/output voltage mismatch, battery backup,
hot insertion, etc.
The NLAST9431 can also be used as a quad 2−to−1 multiplexer−
demultiplexer analog switch with two Select pins that each controls
two multiplexer−demultiplexers.
Select Pins Compatible with TTL Levels
Channel Select Input Overvoltage Tolerant to 5.5 V
Fast Switching and Propagation Speeds
Break−Before−Make Circuitry
Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C
Diode Protection Provided on Channel Select Input
Improved Linearity and Lower ON Resistance over Input Voltage
Latch−up Performance Exceeds 300 mA
Chip Complexity: 158 FETs
Pb−Free Packages are Available
http://onsemi.com
WQFN16
CASE 488AP
MARKING
DIAGRAMS
1ÎÎ16ÎÎ
BB M
G
BB = Specific Device Code
M = Date Code & Assembly Location
G = Pb−Free Device
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 0
1
Publication Order Number:
NLAST9431/D









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NLAST9431 Даташит, Описание, Даташиты
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NC A1
SAB
NO B0
COM B
QFN−16 PACKAGE
16 15 14 13
See TSSOP−16
Switch Configuration
NLAST9431
FUNCTION TABLE
Select AB or CD
ON Channel
L NC to COM
H NO to COM
COM D
NO D0
SCD
NC C1
NO A0 1
COM A 2
NC A1 3
ELECT AB 4
NO B0 5
COM B 6
NC B1 7
GND 8
TSSOP−16 PACKAGE
16 VCC
15 NC D1
14 COM D
13 NO D0
12 SELECT CD
SELECT AB
COM A
COM B
SELECT CD
COM C
COM D
X1
0/1
2/3
X1
0/1
2/3
0 NO A0
1 NC A1
2 NO B0
3 NC B1
0 NO C0
1 NC C1
2 NO D0
3 NC D1
Figure 2. IEC Logic Symbol
11 NC C1
10 COM C
9 NO C0
Figure 1. Logic Diagram
http://onsemi.com
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NLAST9431 Даташит, Описание, Даташиты
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NLAST9431
MAXIMUM RATINGS
Symbol
Parameter
VCC Positive DC Supply Voltage
VIS Analog Input Voltage (VNO or VCOM)
VIN Digital Select Input Voltage
IIK DC Current, Into or Out of Any Pin
PD Power Dissipation in Still Air
QFN−16
TSSOP−16
TSTG
TL
TJ
MSL
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Moisture Sensitivity
FR
ILATCH−UP
qJA
Flammability Rating
Latch−Up Performance
Thermal Resistance
Oxygen Index: 30% − 35%
Above VCC and Below GND at 125°C (Note 1)
QFN−16
TSSOP−16
Value
*0.5 to )7.0
*0.5 VIS VCC )0.5
*0.5 VI )7.0
$50
800
450
*65 to )150
260
+150
Level 1
UL−94−VO (0.125 in)
$300
80
164
Unit
V
V
V
mA
mW
°C
°C
°C
mA
°C/W
Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Extended exposure to these conditions
or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute−maximum−rated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
1. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC DC Supply Voltage
VIN Digital Select Input Voltage
VIS Analog Input Voltage (NC, NO, COM)
TA Operating Temperature Range
tr, tf Input Rise or Fall Time, SELECT
VCC = 3.3 V $ 0.3 V
VCC = 5.0 V $ 0.5 V
Min
2.0
GND
GND
*55
0
0
Max
5.5
5.5
VCC
)125
100
20
Unit
V
V
V
°C
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100 178,700 20.4
110 79,600
9.4
120 37,000
4.2
130 17,800
2.0
140 8,900
1.0
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
1
1 10
100 1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
NLAST9431Low Voltage Single Supply Dual DPDT Analog SwitchON Semiconductor
ON Semiconductor

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